External Memory Interfaces (EMIF) IP User Guide: Agilex™ 5 FPGAs and SoCs

ID 817467
Date 7/08/2024
Public
Document Table of Contents

6.1.2. Agilex 5 FPGA EMIF Memory Device Description IP (DDR4) Parameter Descriptions

Each parameter with an adjacent checkbox can be auto-computed. The checkbox to the left of the parameter controls whether its value is auto-computed (true) or set manually (false). If there is no checkbox to the left of a parameter, then it must be set manually.
Table 89.  Group: Configuration Save
Display Name Description
Configuration Filepath

Filepath to Save to (.qprs extension)

(Identifier: MEM_CONFIG_FILE_QPRS)

Table 90.  Group: High-Level Parameters
Display Name Description
Memory Format

Specifies the packaging format of the memory device

(Identifier: MEM_FORMAT)

Number of Ranks per DIMM

Number of ranks per DIMM

Note: This parameter can be auto-computed.

(Identifier: MEM_RANKS_PER_DIMM)

DRAM Component Package Type

Specifies the packaging type of each memory component used in the interface.

(Identifier: DDR4_MEM_DEVICE_PACKAGE)

Density of Each Memory Die

Specifies the density of each memory die on the device in Gb.

(Identifier: DDR4_MEM_DEVICE_DIE_DENSITY_GBITS)

RDIMM Serial Presence Detect (SPD) Byte 137

Specifies the value of SPD Byte 137 as an integer in decimal.

(Identifier: DDR4_MEM_DEVICE_SPD137_RCD_CA_DRV)

RDIMM Serial Presence Detect (SPD) Byte 138

Specifies the value of SPD Byte 138 as an integer in decimal.

(Identifier: DDR4_MEM_DEVICE_SPD138_RCD_CK_DRV)

Chip ID Width

Specifies the number of chip ID pins. Only applicable to LRDIMMs or RDIMMs that use 3DS memory devices.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_CHIP_ID_WIDTH)

Density of Each Memory Component

Specifies the density of each memory component in Gb.

(Identifier: DDR4_MEM_DEVICE_COMPONENT_DENSITY_GBITS)

Enable Read DBI

Specifies whether read DBI is enabled. Read DBI is only supported on DDR4 discrete components with x8 or x16 DQ width.

(Identifier: DDR4_MEM_DEVICE_READ_DBI_EN)

Write DBI and Data Mask

Specify the write DBI and data mask setting. Neither write DBI nor data mask is supported on DDR4 components with x4 DQ width.

(Identifier: DDR4_MEM_DEVICE_DM_WRITE_DBI)

Enable Address-Command Parity

Specifies whether address-command parity is enabled. If enabled then command latency is increased by the value of parameter "Address-Command Latency Mode".

(Identifier: DDR4_MEM_DEVICE_AC_PARITY_EN)

Table 91.  Group: Memory Interface Parameters / Data Bus
Display Name Description
Device DQ Width

If the device is a DIMM: Specifies the full DQ width of the DIMM.

If the interface is composed of discrete components: Specifies the DQ width of each discrete component.

(Identifier: MEM_DEVICE_DQ_WIDTH)

Device Die DQ Width

The data width of each DDR4 SDRAM die.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_DIE_DQ_WIDTH)

DQ Pins per Component

Specifies the total number of DQ pins per memory component. Must be either 4, 8, or 16.

(Identifier: DDR4_MEM_DEVICE_COMPONENT_DQ_WIDTH)

Burst Length

Specifies burst length of the device in transfers.

(Identifier: DDR4_MEM_DEVICE_BURST_LENGTH)

Table 92.  Group: Memory Interface Parameters / Device Topology
Display Name Description
Device Bank Group Width

Specifies the number of bank group pins. Automatically derived from the number of data pins per component.

(Identifier: DDR4_MEM_DEVICE_BANK_GROUP_ADDR_WIDTH)

Device Bank Address Width

Specifies the number of bank address pins. Automatically set to 2.

(Identifier: DDR4_MEM_DEVICE_BANK_ADDR_WIDTH)

Device Row Address Width

Specifies the number of row address pins. Automatically derived from the device density and the number of data pins per component.

(Identifier: DDR4_MEM_DEVICE_ROW_ADDR_WIDTH)

Device Column Address Width

Specifies the number of column address pins. Automatically set to 10.

(Identifier: DDR4_MEM_DEVICE_COL_ADDR_WIDTH)

Number of Differential Memory Clock Pairs

Specifies the number of CK_t/CK_c clock pairs exposed by the memory interface. Usually more than one pair is required for RDIMM/LRDIMM formats. The value of this parameter depends on the memory device selected. Please refer to the datasheet for your memory device.

(Identifier: DDR4_MEM_DEVICE_CK_WIDTH)

Table 93.  Group: Memory Timing Parameters / Timing Parameters
Display Name Description
Memory Clock Frequency

Specifies the operating frequency of the memory interface in MHz. If you change the memory frequency, you must select a matching Preset from the dropdown (or create a custom one), to update all the timing parameters.

Note: This parameter can be auto-computed.

(Identifier: PHY_MEMCLK_FREQ_MHZ)

Memory Speed Bin

Specifies the memory speed bin using the bin names defined in JEDEC Standard No. 79-4D Chapter 10.

(Identifier: DDR4_MEM_DEVICE_SPEEDBIN)

Memory Read Latency

Specifies the read latency of the memory interface in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_CL_CYC)

Memory Write Latency

Specifies the write latency of the memory interface in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_CWL_CYC)

Table 94.  Group: Memory Timing Parameters / Pre- and Post-Amble Options
Display Name Description
Write Preamble Length

Specifies the write preamble length in cycles.

(Identifier: DDR4_MEM_DEVICE_WR_PREAMBLE_CYC)

Read Preamble Length

Specifies the read preamble length in cycles.

(Identifier: DDR4_MEM_DEVICE_RD_PREAMBLE_CYC)

Table 95.  Group: Memory Timing Parameters / Advanced Timing Parameters
Display Name Description
tREFI

Specifies the average refresh interval in microseconds.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TREFI_US)

tRAS

Specifies the activation-to-precharge command period in nanoseconds.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TRAS_NS)

tRCD

Specifies the activation to interal read or write delay interval in nanoseconds.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TRCD_NS)

tRP

Specifies the precharge command period in nanoseconds.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TRP_NS)

tRC

Specifies the activate-to-activate or activate-to-refresh command period in nanoseconds.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TRC_NS)

tCCD_L

Specifies the CAS-to-CAS command delay for the same bank group in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TCCD_L_CYC)

tCCD_S

Specifies the CAS-to-CAS command delay for different bank groups in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TCCD_S_CYC)

tRRD_L

Specifies the activation-to-activation command delay for the same bank group in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TRRD_L_CYC)

tRRD_S

Specifies the activation-to-activation command delay for different bank groups in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TRRD_S_CYC)

tFAW

Specifies the four-activate-window in nanoseconds.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TFAW_NS)

tWTR_L

Specifies the minimum delay from the start of an internal write transaction to the immediately next internal read command for the same bank group in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TWTR_L_CYC)

tWTR_S

Specifies the minimum delay from the start of an internal write transaction to the immediately next internal read command for different bank groups in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TWTR_S_CYC)

tRTP

Specifies the internal read to precharge command delay in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TRTP_CYC)

tWR

Specifies the write recovery time in nanoseconds.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TWR_NS)

tMRD

Specifies the mode-register command cycle time in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TMRD_CYC)

tCKSRE

Specifies the number of required valid clock cycles after self-refresh entry or power-down entry.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TCKSRE_CYC)

tCKSRX

Specifies the number of required valid clock cycles before self-refresh exit, power-down exit, or reset exit.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TCKSRX_CYC)

tCKE

Specifies the minimum CKE pulse width in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TCKE_CYC)

tCKESR

Specifies the minimum CKE low pulse width from self-refresh entry to self-refresh exit in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TCKESR_CYC)

tMPRR

Specifies the multi-purpose register recovery time measured in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TMPRR_CYC)

tRFC

Specifies the refresh-to-activate or refresh-to-refresh command period.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TRFC_NS)

tDQSCK

Specifies the minimum DQS_t, DQS_c rising edge output timing location from rising CK_t, CK_c in picoseconds.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TDQSCK_PS)

tDQSS

Specifies the skew between the memory clock (CK) and the output data strobes used for writes in cycles. It is the time between the rising data strobe edge (DQS_t/DQS_c).

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TDQSS_CYC)

tDSH

Specifies the write DQS hold time. This is the time difference between the rising CK edge and the falling edge of DQS, measured as a percentage of tCK.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TDSH_CYC)

tDSS

Describes the time between the falling edge of DQS to the rising edge of the next CK transition.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TDSS_CYC)

tIH (Base)

Refers to the hold time for the Address/Command bus after the rising edge of CK in picoseconds. Depending on what AC level the user has chosen for a design, the hold margin can vary (this variance will be automatically determined when the user chooses the "tIH (base) AC level").

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TIH_PS)

tIS (Base)

Refers to the setup time for the Address/Command/Control bus to the rising edge of CK in picoseconds.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TIS_PS)

tQSH

Specifies the write DQS hold time in cycles. This is the time difference between the rising CK edge and the falling edge of DQS, measured as a percentage of tCK.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TQSH_CYC)

tWLH

Describes the write leveling hold time in cycles. It is measured from the rising edge of DQS to the rising edge of CK.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TWLH_CYC)

tWLS

Describes the write leveling setup time. It is measured from the rising edge of CK to the rising edge of DQS.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TWLS_CYC)

tRFC_DLR

Specifies the refresch cycle time across different logical rank in nanoseconds. Only applicable to 3DS devices.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TRFC_DLR_NS)

tRRD_DLR

Specifies the activation-to-activation time across different logical rank in cycles. Only applicable to 3DS devices.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TRRD_DLR_CYC)

tFAW_DLR

Specifies the four-activate-window across different logical ranks in nanoseconds.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TFAW_DLR_NS)

tCCD_DLR

Specifies the CAS-to-CAS delay across different logical ranks in nanoseconds.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TCCD_DLR_NS)

tXP

Specifies the delay from power down exit with DLL on to any valid command, or from precharge power down with with DLL frozen to commands not requiring a locked DLL. Measured in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TXP_CYC)

tXS

Specifies the delay from self refresh exit to commands not requiring a locked DLL in nanoseconds.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TXS_NS)

tXSDLL

Specifies the delay from self refresh exit to commands requiring a locked DLL in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TXS_DLL_CYC)

tCPDED

Specifies the command pass disable delay measured in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TCPDED_CYC)

tMOD

Specifies the mode register set command update delay in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TMOD_CYC)

tZQCS

Specifies the normal operation short calibration time in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TZQCS_CYC)

tZQINIT

Specifies the power-up and reset calibration time in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TZQINIT_CYC)

tZQOPER

Specifies the normal operation full calibration time in cycles.

Note: This parameter can be auto-computed.

(Identifier: DDR4_MEM_DEVICE_TZQOPER_CYC)