Visible to Intel only — GUID: orm1698967330402
Ixiasoft
Visible to Intel only — GUID: orm1698967330402
Ixiasoft
6.1.2. Intel Agilex 7 FPGA EMIF Memory Device Description IP (DDR4) Parameter Descriptions
Display Name | Description |
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Configuration Filepath | Filepath to Save to (.qprs extension) (Identifier: MEM_CONFIG_FILE_QPRS) |
Display Name | Description |
---|---|
Memory Format | Specifies the packaging format of the memory device (Identifier: MEM_FORMAT) |
Number of Ranks per DIMM | Number of ranks per DIMM Note: This parameter can be auto-computed. (Identifier: MEM_RANKS_PER_DIMM) |
DRAM Component Package Type | Specifies the packaging type of each memory component used in the interface. (Identifier: DDR4_MEM_DEVICE_PACKAGE) |
Density of Each Memory Die | Specifies the density of each memory die on the device in Gb. (Identifier: DDR4_MEM_DEVICE_DIE_DENSITY_GBITS) |
Chip ID Width | Specifies the number of chip ID pins. Only applicable to LRDIMMs or RDIMMs that use 3DS memory devices. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_CHIP_ID_WIDTH) |
Density of Each Memory Component | Specifies the density of each memory component in Gb. (Identifier: DDR4_MEM_DEVICE_COMPONENT_DENSITY_GBITS) |
Enable Read DBI | Specifies whether read DBI is enabled. Read DBI is only supported on DDR4 discrete components with x8 or x16 DQ width. (Identifier: DDR4_MEM_DEVICE_READ_DBI_EN) |
Write DBI and Data Mask | Specify the write DBI and data mask setting. Neither write DBI nor data mask is supported on DDR4 components with x4 DQ width. (Identifier: DDR4_MEM_DEVICE_DM_WRITE_DBI) |
Enable Address-Command Parity | Specifies whether address-command parity is enabled. If enabled then command latency is increased by the value of parameter "Address-Command Latency Mode". (Identifier: DDR4_MEM_DEVICE_AC_PARITY_EN) |
Display Name | Description |
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Device DQ Width | If the device is a DIMM: Specifies the full DQ width of the DIMM. If the interface is composed of discrete components: Specifies the DQ width of each discrete component. (Identifier: MEM_DEVICE_DQ_WIDTH) |
Device Die DQ Width | The data width of each DDR4 SDRAM die. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_DIE_DQ_WIDTH) |
DQ Pins per Component | Specifies the total number of DQ pins per memory component. Must be either 4, 8, or 16. (Identifier: DDR4_MEM_DEVICE_COMPONENT_DQ_WIDTH) |
Burst Length | Specifies burst length of the device in transfers. (Identifier: DDR4_MEM_DEVICE_BURST_LENGTH) |
Display Name | Description |
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Device Bank Group Width | Specifies the number of bank group pins. Automatically derived from the number of data pins per component. (Identifier: DDR4_MEM_DEVICE_BANK_GROUP_ADDR_WIDTH) |
Device Bank Address Width | Specifies the number of bank address pins. Automatically set to 2. (Identifier: DDR4_MEM_DEVICE_BANK_ADDR_WIDTH) |
Device Row Address Width | Specifies the number of row address pins. Automatically derived from the device density and the number of data pins per component. (Identifier: DDR4_MEM_DEVICE_ROW_ADDR_WIDTH) |
Device Column Address Width | Specifies the number of column address pins. Automatically set to 10. (Identifier: DDR4_MEM_DEVICE_COL_ADDR_WIDTH) |
Number of Differential Memory Clock Pairs | Specifies the number of CK_t/CK_c clock pairs exposed by the memory interface. Usually more than one pair is required for RDIMM/LRDIMM formats. The value of this parameter depends on the memory device selected. Please refer to the datasheet for your memory device. (Identifier: DDR4_MEM_DEVICE_CK_WIDTH) |
Display Name | Description |
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Memory Clock Frequency | Specifies the operating frequency of the memory interface in MHz. If you change the memory frequency, you must select a matching Preset from the dropdown (or create a custom one), to update all the timing parameters. Note: This parameter can be auto-computed. (Identifier: PHY_MEMCLK_FREQ_MHZ) |
Memory Speed Bin | Specifies the memory speed bin using the bin names defined in JEDEC Standard No. 79-4D Chapter 10. (Identifier: DDR4_MEM_DEVICE_SPEEDBIN) |
Memory Read Latency | Specifies the read latency of the memory interface in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_CL_CYC) |
Memory Write Latency | Specifies the write latency of the memory interface in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_CWL_CYC) |
Address-Command Latency Mode | Specifies whether address-command latency is supported, and if enabled, the latency in cycles. (Identifier: DDR4_MEM_DEVICE_AC_PARITY_LATENCY_MODE) |
Display Name | Description |
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tREFI | Specifies the average refresh interval in microseconds. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TREFI_US) |
tRAS | Specifies the activation-to-precharge command period in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TRAS_NS) |
tRCD | Specifies the activation to internal read or write delay interval in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TRCD_NS) |
tRP | Specifies the precharge command period in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TRP_NS) |
tRC | Specifies the activate-to-activate or activate-to-refresh command period in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TRC_NS) |
tCCD_L | Specifies the CAS-to-CAS command delay for the same bank group in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TCCD_L_CYC) |
tCCD_S | Specifies the CAS-to-CAS command delay for different bank groups in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TCCD_S_CYC) |
tRRD_L | Specifies the activation-to-activation command delay for the same bank group in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TRRD_L_CYC) |
tRRD_S | Specifies the activation-to-activation command delay for different bank groups in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TRRD_S_CYC) |
tFAW | Specifies the four-activate-window in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TFAW_NS) |
tWTR_L | Specifies the minimum delay from the start of an internal write transaction to the immediately next internal read command for the same bank group in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TWTR_L_CYC) |
tWTR_S | Specifies the minimum delay from the start of an internal write transaction to the immediately next internal read command for different bank groups in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TWTR_S_CYC) |
tRTP | Specifies the internal read to precharge command delay in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TRTP_CYC) |
tWR | Specifies the write recovery time in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TWR_NS) |
tMRD | Specifies the mode-register command cycle time in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TMRD_CYC) |
tCKSRE | Specifies the number of required valid clock cycles after self-refresh entry or power-down entry. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TCKSRE_CYC) |
tCKSRX | Specifies the number of required valid clock cycles before self-refresh exit, power-down exit, or reset exit. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TCKSRX_CYC) |
tCKE | Specifies the minimum CKE pulse width in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TCKE_CYC) |
tCKESR | Specifies the minimum CKE low pulse width from self-refresh entry to self-refresh exit in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TCKESR_CYC) |
tMPRR | Specifies the multi-purpose register recovery time measured in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TMPRR_CYC) |
tRFC | Specifies the refresh-to-activate or refresh-to-refresh command period. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TRFC_NS) |
tDIVW | Specifies the data pin receiving timing window in UI. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TDIVW_TOTAL_UI) |
tDQSCK | Specifies the minimum DQS_t, DQS_c rising edge output timing location from rising CK_t, CK_c in picoseconds. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TDQSCK_PS) |
tDQSQ | Specifies the latest valid transition of the associated DQ pins for a READ. tDQSQ specifically refers to the DQS_t/DQS_c to DQ skew. It is the length of time between the DQS_t/DQS_c crossing to the last valid transition of the slowest DQ pin in the DQ group associated with that DQS strobe. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TDQSQ_UI) |
tDQSS | Specifies the skew between the memory clock (CK) and the output data strobes used for writes in cycles. It is the time between the rising data strobe edge (DQS_t/DQS_c). Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TDQSS_CYC) |
tDSH | Specifies the write DQS hold time. This is the time difference between the rising CK edge and the falling edge of DQS, measured as a percentage of tCK. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TDSH_CYC) |
tDSS | Describes the time between the falling edge of DQS to the rising edge of the next CK transition. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TDSS_CYC) |
tDWVp | Specifies the data valid window per device per pin measured in terms of UI. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TDVWP_UI) |
tIH (Base) DC Level | Refers to the voltage level which the address/command signal must not cross during the hold window in mV. The signal is considered stable only if it remains above this voltage level (for a logic 1) or below this voltage level (for a logic 0) for the entire hold period. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TIH_DC_MV) |
tIH (Base) | Refers to the hold time for the Address/Command bus after the rising edge of CK in picoseconds. Depending on what AC level the user has chosen for a design, the hold margin can vary (this variance will be automatically determined when the user chooses the "tIH (base) AC level"). Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TIH_PS) |
tIS (Base) AC Level | Refers to the voltage level which the address/command signal must cross and remain above during the setup margin window in mV. The signal is considered stable only if it remains above this voltage level (for a logic 1) or below this voltage level (for a logic 0) for the entire setup period. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TIS_AC_MV) |
tIS (Base) | Refers to the setup time for the Address/Command/Control bus to the rising edge of CK in picoseconds. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TIS_PS) |
tQH | Specifies the output hold time for the DQ in relation to DQS_t/DQS_c in UI. It is the length of time between the DQS_t/DQS_c pair crossing to the earliest invalid transition of the fastest DQ pin in the DQ group associated with that DQS strobe. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TQH_UI) |
tQSH | Specifies the write DQS hold time in cycles. This is the time difference between the rising CK edge and the falling edge of DQS, measured as a percentage of tCK. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TQSH_CYC) |
tWLH | Describes the write leveling hold time in cycles. It is measured from the rising edge of DQS to the rising edge of CK. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TWLH_CYC) |
tWLS | Describes the write leveling setup time. It is measured from the rising edge of CK to the rising edge of DQS. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TWLS_CYC) |
tDiVW_total | Describes the minimum horizontal width of the DQ eye opening required by the receiver (memory device/DIMM). It is measured in UI. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_VDIVW_TOTAL_MV) |
tRFC_DLR | Specifies the refresh cycle time across different logical rank in nanoseconds. Only applicable to 3DS devices. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TRFC_DLR_NS) |
tRRD_DLR | Specifies the activation-to-activation time across different logical rank in nanoseconds. Only applicable to 3DS devices. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TRRD_DLR_CYC) |
tFAW_DLR | Specifies the four-activate-window across different logical ranks in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TFAW_DLR_NS) |
tCCD_DLR | Specifies the CAS-to-CAS delay across different logical ranks in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TCCD_DLR_NS) |
tXP | Specifies the delay from power down exit with DLL on to any valid command, or from precharge power down with with DLL frozen to commands not requiring a locked DLL. Measured in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TXP_CYC) |
tXS | Specifies the delay from self refresh exit to commands not requiring a locked DLL in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TXS_NS) |
tXSDLL | Specifies the delay from self refresh exit to commands requiring a locked DLL in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TXS_DLL_CYC) |
tCPDED | Specifies the command pass disable delay measured in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TCPDED_CYC) |
tMOD | Specifies the mode register set command update delay in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TMOD_CYC) |
tZQCS | Specifies the normal operation short calibration time in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TZQCS_CYC) |
tZQINIT | Specifies the power-up and reset calibration time in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TZQINIT_CYC) |
tZQOPER | Specifies the normal operation full calibration time in cycles. Note: This parameter can be auto-computed. (Identifier: DDR4_MEM_DEVICE_TZQOPER_CYC) |