External Memory Interface Handbook Volume 2: Design Guidelines: For UniPHY-based Device Families

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ID 683385
Date 3/06/2023
Public
Document Table of Contents
Document Table of Contents x
1. Planning Pin and FPGA Resources 2. DDR2 and DDR3 SDRAM Board Design Guidelines 3. Dual-DIMM DDR2 and DDR3 SDRAM Board Design Guidelines 4. LPDDR2 SDRAM Board Design Guidelines 5. RLDRAM II and RLDRAM 3 Board Design Guidelines 6. QDR II/II+ SRAM Board Design Guidelines 7. Implementing and Parameterizing Memory IP 8. Simulating Memory IP 9. Analyzing Timing of Memory IP 10. Debugging Memory IP 11. Optimizing the Controller 12. PHY Considerations 13. Power Estimation Methods for External Memory Interfaces
1. Planning Pin and FPGA Resources x
1.1. Interface Pins 1.2. Guidelines for UniPHY-based External Memory Interface IP 1.3. Using PLL Guidelines 1.4. PLL Cascading 1.5. DLL 1.6. Other FPGA Resources 1.7. Document Revision History
1.1. Interface Pins x
1.1.1. Estimating Pin Requirements 1.1.2. DDR, DDR2, and DDR3 SDRAM Clock Signals 1.1.3. DDR, DDR2, and DDR3 SDRAM Command and Address Signals 1.1.4. DDR, DDR2, and DDR3 SDRAM Data, Data Strobes, DM/DBI, and Optional ECC Signals 1.1.5. DDR, DDR2, and DDR3 SDRAM DIMM Options 1.1.6. QDR II and QDR II+ SRAM Clock Signals 1.1.7. QDR II and QDR II+ SRAM Command Signals 1.1.8. QDR II and QDR II+ SRAM Address Signals 1.1.9. QDR II and QDR II+ SRAM Data, BWS, and QVLD Signals 1.1.10. RLDRAM II and RLDRAM 3 Clock Signals 1.1.11. RLDRAM II and RLDRAM 3 Commands and Addresses 1.1.12. RLDRAM II and RLDRAM 3 Data, DM and QVLD Signals 1.1.13. LPDDR2 Clock Signal 1.1.14. LPDDR2 Command and Address Signal 1.1.15. LPDDR2 Data, Data Strobe, and DM Signals 1.1.16. Maximum Number of Interfaces 1.1.17. OCT Support
1.1.16. Maximum Number of Interfaces x
1.1.16.1. Maximum Number of DDR SDRAM Interfaces Supported per FPGA 1.1.16.2. Maximum Number of DDR2 SDRAM Interfaces Supported per FPGA 1.1.16.3. Maximum Number of DDR3 SDRAM Interfaces Supported per FPGA 1.1.16.4. Maximum Number of QDR II and QDR II+ SRAM Interfaces Supported per FPGA 1.1.16.5. Maximum Number of RLDRAM II Interfaces Supported per FPGA 1.1.16.6. Maximum Number of LPDDR2 SDRAM Interfaces Supported per FPGA
1.2. Guidelines for UniPHY-based External Memory Interface IP x
1.2.1. General Pin-out Guidelines for UniPHY-based External Memory Interface IP 1.2.2. Pin-out Rule Exceptions for ×36 Emulated QDR II and QDR II+ SRAM Interfaces in Arria II, Stratix III and Stratix IV Devices 1.2.3. Pin-out Rule Exceptions for RLDRAM II and RLDRAM 3 Interfaces 1.2.4. Pin-out Rule Exceptions for QDR II and QDR II+ SRAM Burst-length-of-two Interfaces 1.2.5. Pin Connection Guidelines Tables 1.2.6. PLLs and Clock Networks
1.2.2. Pin-out Rule Exceptions for ×36 Emulated QDR II and QDR II+ SRAM Interfaces in Arria II, Stratix III and Stratix IV Devices x
1.2.2.1. Timing Impact on x36 Emulation 1.2.2.2. Rules to Combine Groups 1.2.2.3. Determining the CQ/CQn Arrival Time Skew
1.2.3. Pin-out Rule Exceptions for RLDRAM II and RLDRAM 3 Interfaces x
1.2.3.1. Interfacing with ×9 RLDRAM II CIO Devices 1.2.3.2. Interfacing with ×18 RLDRAM II and RLDRAM 3 CIO Devices 1.2.3.3. Interfacing with RLDRAM II and RLDRAM 3 ×36 CIO Devices
1.2.5. Pin Connection Guidelines Tables x
1.2.5.1. DDR3 SDRAM With Leveling Interface Pin Utilization Applicable for Arria V GZ, Stratix III, Stratix IV, and Stratix V Devices 1.2.5.2. QDR II and QDR II+ SRAM Pin Utilization for Arria II, Arria V, Stratix III, Stratix IV, and Stratix V Devices 1.2.5.3. RLDRAM II CIO Pin Utilization for Arria II GZ, Arria V, Stratix III, Stratix IV, and Stratix V Devices  1.2.5.4. LPDDR2 Pin Utilization for Arria V, Cyclone V, and MAX 10 FPGA Devices 1.2.5.5. Additional Guidelines for Arria V GZ and Stratix V Devices 1.2.5.6. Additional Guidelines for Arria V ( Except Arria V GZ) Devices 1.2.5.7. Additional Guidelines for MAX 10 Devices 1.2.5.8. Additional Guidelines for Cyclone V Devices
1.2.6. PLLs and Clock Networks x
1.2.6.1. Number of PLLs Available in Intel® Device Families 1.2.6.2. Number of Enhanced PLL Clock Outputs and Dedicated Clock Outputs Available in Intel® Device Families 1.2.6.3. Number of Clock Networks Available in Intel® Device Families 1.2.6.4. Clock Network Usage in UniPHY-based Memory Interfaces—DDR2 and DDR3 SDRAM (1) (2) 1.2.6.5. Clock Network Usage in UniPHY-based Memory Interfaces—RLDRAM II, and QDR II and QDR II+ SRAM 1.2.6.6. PLL Usage for DDR, DDR2, and DDR3 SDRAM Without Leveling Interfaces 1.2.6.7. PLL Usage for DDR3 SDRAM With Leveling Interfaces
2. DDR2 and DDR3 SDRAM Board Design Guidelines x
2.1. Leveling and Dynamic Termination 2.2. DDR2 Terminations and Guidelines 2.3. DDR3 Terminations in Arria V, Cyclone V, Stratix III, Stratix IV, and Stratix V 2.4. Layout Approach 2.5. Channel Signal Integrity Measurement 2.6. Design Layout Guidelines 2.7. Package Deskew 2.8. Document Revision History
2.1. Leveling and Dynamic Termination x
2.1.1. Read and Write Leveling 2.1.2. Dynamic ODT 2.1.3. Dynamic On-Chip Termination 2.1.4. Dynamic On-Chip Termination in Stratix III and Stratix IV Devices 2.1.5. Dynamic OCT in Stratix V Devices
2.1.3. Dynamic On-Chip Termination x
2.1.3.1. FPGA Writing to Memory 2.1.3.2. FPGA Reading from Memory
2.2. DDR2 Terminations and Guidelines x
2.2.1. Termination for DDR2 SDRAM 2.2.2. DDR2 Design Layout Guidelines 2.2.3. General Layout Guidelines 2.2.4. Layout Guidelines for DDR2 SDRAM Interface
2.2.1. Termination for DDR2 SDRAM x
2.2.1.1. External Parallel Termination 2.2.1.2. On-Chip Termination 2.2.1.3. Recommended Termination Schemes
2.3. DDR3 Terminations in Arria V, Cyclone V, Stratix III, Stratix IV, and Stratix V x
2.3.1. Terminations for Single-Rank DDR3 SDRAM Unbuffered DIMM 2.3.2. Terminations for Multi-Rank DDR3 SDRAM Unbuffered DIMM 2.3.3. Terminations for DDR3 SDRAM Registered DIMM 2.3.4. Terminations for DDR3 SDRAM Load-Reduced DIMM 2.3.5. Terminations for DDR3 SDRAM Components With Leveling
2.3.5. Terminations for DDR3 SDRAM Components With Leveling x
2.3.5.1. DDR3 SDRAM Components With or Without Leveling
2.5. Channel Signal Integrity Measurement x
2.5.1. Importance of Accurate Channel Signal Integrity Information 2.5.2. Understanding Channel Signal Integrity Measurement 2.5.3. How to Enter Calculated Channel Signal Integrity Values 2.5.4. Guidelines for Calculating DDR3 Channel Signal Integrity
2.6. Design Layout Guidelines x
2.6.1. General Layout Guidelines 2.6.2. Layout Guidelines for DDR3 SDRAM Interfaces 2.6.3. Length Matching Rules 2.6.4. Spacing Guidelines 2.6.5. Layout Guidelines for DDR3 SDRAM Wide Interface (>72 bits)
2.6.5. Layout Guidelines for DDR3 SDRAM Wide Interface (>72 bits) x
2.6.5.1. Fly-By Network Design for Clock, Command, and Address Signals
2.7. Package Deskew x
2.7.1. Package Deskew Recommendation for Stratix V Devices 2.7.2. DQ/DQS/DM Deskew 2.7.3. Address and Command Deskew 2.7.4. Deskew Example 2.7.5. Package Migration 2.7.6. Package Deskew for RLDRAM II and RLDRAM 3
3. Dual-DIMM DDR2 and DDR3 SDRAM Board Design Guidelines x
3.1. General Layout Guidelines 3.2. Dual-Slot Unbuffered DDR2 SDRAM 3.3. Dual-Slot Unbuffered DDR3 SDRAM 3.4. Document Revision History
3.2. Dual-Slot Unbuffered DDR2 SDRAM x
3.2.1. Overview of ODT Control 3.2.2. DIMM Configuration 3.2.3. Dual-DIMM Memory Interface with Slot 1 Populated 3.2.4. Dual-DIMM with Slot 2 Populated 3.2.5. Dual-DIMM Memory Interface with Both Slot 1 and Slot 2 Populated 3.2.6. Dual-DIMM DDR2 Clock, Address, and Command Termination and Topology 3.2.7. Control Group Signals 3.2.8. Clock Group Signals
3.2.3. Dual-DIMM Memory Interface with Slot 1 Populated x
3.2.3.1. FPGA Writing to Memory 3.2.3.2. Write to Memory Using an ODT Setting of 150-ohm 3.2.3.3. Reading from Memory
3.2.4. Dual-DIMM with Slot 2 Populated x
3.2.4.1. FPGA Writing to Memory 3.2.4.2. Write to Memory Using an ODT Setting of 150-ohm 3.2.4.3. Reading from Memory
3.2.5. Dual-DIMM Memory Interface with Both Slot 1 and Slot 2 Populated x
3.2.5.1. FPGA Writing to Memory 3.2.5.2. Write to Memory in Slot 1 Using an ODT Setting of 75-ohm 3.2.5.3. Reading From Memory
3.3. Dual-Slot Unbuffered DDR3 SDRAM x
3.3.1. Comparison of DDR3 and DDR2 DQ and DQS ODT Features and Topology 3.3.2. Dual-DIMM DDR3 Clock, Address, and Command Termination and Topology 3.3.3. FPGA OCT Features
3.3.2. Dual-DIMM DDR3 Clock, Address, and Command Termination and Topology x
3.3.2.1. Address and Command Signals 3.3.2.2. Control Group Signals 3.3.2.3. Clock Group Signals
3.3.3. FPGA OCT Features x
3.3.3.1. Arria V, Cyclone V, Stratix III, Stratix IV, and Stratix V Devices 3.3.3.2. Arria II GX Devices
4. LPDDR2 SDRAM Board Design Guidelines x
4.1. LPDDR2 Guidance 4.2. Document Revision History
4.1. LPDDR2 Guidance x
4.1.1. LPDDR2 SDRAM Configurations 4.1.2. OCT Signal Terminations for Arria V and Cyclone V Devices 4.1.3. General Layout Guidelines 4.1.4. LPDDR2 Layout Guidelines
4.1.2. OCT Signal Terminations for Arria V and Cyclone V Devices x
4.1.2.1. Outputs from the FPGA to the LPDDR2 Component 4.1.2.2. Input to the FPGA from the LPDDR2 SDRAM Component 4.1.2.3. Termination Schemes
5. RLDRAM II and RLDRAM 3 Board Design Guidelines x
5.1. RLDRAM II Configurations 5.2. RLDRAM 3 Configurations 5.3. Signal Terminations 5.4. PCB Layout Guidelines 5.5. General Layout Guidelines 5.6. RLDRAM II and RLDRAM 3 Layout Guidelines 5.7. Layout Approach 5.8. Package Deskew for RLDRAM II and RLDRAM 3 5.9. Document Revision History
5.3. Signal Terminations x
5.3.1. Input to the FPGA from the RLDRAM Components 5.3.2. Outputs from the FPGA to the RLDRAM II and RLDRAM 3 Components 5.3.3. RLDRAM II Termination Schemes 5.3.4. RLDRAM 3 Termination Schemes
5.7. Layout Approach x
5.7.1. Arria V and Stratix V Board Setting Parameters
6. QDR II/II+ SRAM Board Design Guidelines x
6.1. QDR II SRAM Configurations 6.2. Signal Terminations 6.3. General Layout Guidelines 6.4. QDR II Layout Guidelines 6.5. QDR II SRAM Layout Approach 6.6. Package Deskew for QDR II 6.7. Document Revision History
6.2. Signal Terminations x
6.2.1. Output from the FPGA to the QDR II SRAM Component 6.2.2. Input to the FPGA from the QDR II SRAM Component 6.2.3. Termination Schemes
7. Implementing and Parameterizing Memory IP x
7.1. Design Flow 7.2. UniPHY-Based External Memory Interface IP 7.3. Document Revision History
7.1. Design Flow x
7.1.1. IP Catalog Design Flow 7.1.2. Platform Designer System Integration Tool Design Flow
7.1.1. IP Catalog Design Flow x
7.1.1.1. IP Catalog and Parameter Editor 7.1.1.2. Specifying Parameters for the IP Catalog Flow 7.1.1.3. Using Example Designs 7.1.1.4. Constraining the Design 7.1.1.5. Compiling the Design
7.1.1.4. Constraining the Design x
7.1.1.4.1. Adding Pins and DQ Group Assignments
7.1.2. Platform Designer System Integration Tool Design Flow x
7.1.2.1. Specify Parameters for the Platform Designer Flow 7.1.2.2. Completing the Platform Designer System
7.2. UniPHY-Based External Memory Interface IP x
7.2.1. Platform Designer Interfaces 7.2.2. Generated Files for Memory Controllers with the UniPHY IP 7.2.3. Parameterizing Memory Controllers 7.2.4. Board Settings 7.2.5. Controller Settings for UniPHY IP 7.2.6. Diagnostics for UniPHY IP
7.2.1. Platform Designer Interfaces x
7.2.1.1. DDR2 SDRAM Controller with UniPHY Intel FPGA IP Interfaces 7.2.1.2. DDR3 SDRAM Controller with UniPHY Intel FPGA IP Interfaces 7.2.1.3. LPDDR2 SDRAM Controller with UniPHY Intel FPGA IP Interfaces 7.2.1.4. QDR II and QDR II+ SRAM Controller with UniPHY Intel FPGA IP Interfaces 7.2.1.5. RLDRAM II Controller with UniPHY Intel FPGA IP Interfaces 7.2.1.6. RLDRAM 3 UniPHY Intel FPGA IP Interface
7.2.3. Parameterizing Memory Controllers x
7.2.3.1. PHY Settings for UniPHY IP 7.2.3.2. Memory Parameters for LPDDR2, DDR2 and DDR3 SDRAM Controller with UniPHY Intel FPGA IP 7.2.3.3. Memory Parameters for QDR II and QDR II+ SRAM Controller with UniPHY Intel FPGA IP 7.2.3.4. Memory Parameters for RLDRAM II Controller with UniPHY Intel FPGA IP 7.2.3.5. Memory Timing Parameters for DDR2, DDR3, and LPDDR2 SDRAM Controller with UniPHY Intel FPGA IP 7.2.3.6. Memory Timing Parameters for QDR II and QDR II+ SRAM Controller with UniPHY Intel FPGA IP 7.2.3.7. Memory Timing Parameters for RLDRAM II Controller with UniPHY Intel FPGA IP 7.2.3.8. Memory Parameters for RLDRAM 3 UniPHY Intel FPGA IP
7.2.3.2. Memory Parameters for LPDDR2, DDR2 and DDR3 SDRAM Controller with UniPHY Intel FPGA IP x
7.2.3.2.1. Memory Initialization Options for DDR2 7.2.3.2.2. Memory Initialization Options for DDR3 7.2.3.2.3. Memory Initialization Options for LPDDR2
7.2.4. Board Settings x
7.2.4.1. Setup and Hold Derating for UniPHY IP 7.2.4.2. Intersymbol Interference Channel Signal Integrity for UniPHY IP 7.2.4.3. Board Skews for UniPHY IP
7.2.4.3. Board Skews for UniPHY IP x
7.2.4.3.1. Board Skew Parameters for LPDDR2/DDR2/DDR3 SDRAM 7.2.4.3.2. Board Skew Parameters for QDR II and QDR II+ 7.2.4.3.3. Board Skew parameters for RLDRAM II and RLDRAM 3
8. Simulating Memory IP x
8.1. Simulation Options 8.2. Simulation Walkthrough with UniPHY IP 8.3. Document Revision History
8.2. Simulation Walkthrough with UniPHY IP x
8.2.1. Simulation Scripts 8.2.2. Preparing the Vendor Memory Model 8.2.3. Functional Simulation with Verilog HDL 8.2.4. Functional Simulation with VHDL 8.2.5. Simulating the Example Design 8.2.6. UniPHY Abstract PHY Simulation 8.2.7. PHY-Only Simulation 8.2.8. Post-fit Functional Simulation 8.2.9. Simulation Issues
8.2.8. Post-fit Functional Simulation x
8.2.8.1. Running Post-fit Simulation
9. Analyzing Timing of Memory IP x
9.1. Memory Interface Timing Components 9.2. FPGA Timing Paths 9.3. Timing Constraint and Report Files for UniPHY IP 9.4. Timing Analysis Description 9.5. Timing Report DDR 9.6. Report SDC 9.7. Calibration Effect in Timing Analysis 9.8. Timing Model Assumptions and Design Rules 9.9. Common Timing Closure Issues 9.10. Optimizing Timing 9.11. Timing Deration Methodology for Multiple Chip Select DDR2 and DDR3 SDRAM Designs 9.12. Performing I/O Timing Analysis 9.13. Document Revision History
9.1. Memory Interface Timing Components x
9.1.1. Source-Synchronous Paths 9.1.2. Calibrated Paths 9.1.3. Internal FPGA Timing Paths 9.1.4. Other FPGA Timing Parameters
9.2. FPGA Timing Paths x
9.2.1. Arria II Device PHY Timing Paths 9.2.2. Stratix III and Stratix IV PHY Timing Paths 9.2.3. Arria V, Arria V GZ, Cyclone V, and Stratix V Timing paths
9.4. Timing Analysis Description x
9.4.1. UniPHY IP Timing Analysis
9.4.1. UniPHY IP Timing Analysis x
9.4.1.1. Address and Command 9.4.1.2. PHY or Core 9.4.1.3. PHY or Core Reset 9.4.1.4. Read Capture and Write 9.4.1.5. Read Resynchronization 9.4.1.6. DQS versus CK—Arria II GX and Cyclone IV Devices 9.4.1.7. Write Leveling tDQSS 9.4.1.8. Write Leveling tDSH/tDSS 9.4.1.9. DK versus CK (RLDRAM II with UniPHY) 9.4.1.10. Bus Turnaround Time
9.4.1.4. Read Capture and Write x
9.4.1.4.1. Stratix III 9.4.1.4.2. Arria II, Arria V, Cyclone V, Stratix IV and Stratix V
9.7. Calibration Effect in Timing Analysis x
9.7.1. Calibration Emulation for Calibrated Path 9.7.2. Calibration Error or Quantization Error 9.7.3. Calibration Uncertainties 9.7.4. Memory Calibration
9.8. Timing Model Assumptions and Design Rules x
9.8.1. Memory Clock Output Assumptions 9.8.2. Write Data Assumptions 9.8.3. Read Data Assumptions 9.8.4. DLL Assumptions 9.8.5. PLL and Clock Network Assumptions for Stratix III Devices
9.8.1. Memory Clock Output Assumptions x
9.8.1.1. Memory Clock Assumptions for Stratix III Devices
9.8.2. Write Data Assumptions x
9.8.2.1. Write Data Assumptions for Stratix III Devices
9.8.3. Read Data Assumptions x
9.8.3.1. Read Data Assumptions for Stratix III Devices
9.9. Common Timing Closure Issues x
9.9.1. Missing Timing Margin Report 9.9.2. Incomplete Timing Margin Report 9.9.3. Read Capture Timing 9.9.4. Write Timing 9.9.5. Address and Command Timing 9.9.6. PHY Reset Recovery and Removal 9.9.7. Clock-to-Strobe (for DDR and DDR2 SDRAM Only) 9.9.8. Read Resynchronization and Write Leveling Timing (for SDRAM Only)
9.11. Timing Deration Methodology for Multiple Chip Select DDR2 and DDR3 SDRAM Designs x
9.11.1. Multiple Chip Select Configuration Effects 9.11.2. Timing Deration using the Board Settings
9.11.1. Multiple Chip Select Configuration Effects x
9.11.1.1. ISI Effects 9.11.1.2. Calibration Effects 9.11.1.3. Board Effects
9.11.2. Timing Deration using the Board Settings x
9.11.2.1. Slew Rates 9.11.2.2. Slew Rate Setup, Hold, and Derating Calculation 9.11.2.3. Intersymbol Interference 9.11.2.4. Measuring Eye Reduction for Address/Command, DQ, and DQS Setup and Hold Time
9.12. Performing I/O Timing Analysis x
9.12.1. Performing I/O Timing Analysis with Third-Party Simulation Tools 9.12.2. Performing Advanced I/O Timing Analysis with Board Trace Delay Model
10. Debugging Memory IP x
10.1. Resource and Planning Issues 10.2. Interface Configuration Performance Issues 10.3. Functional Issue Evaluation 10.4. Timing Issue Characteristics 10.5. Verifying Memory IP Using the Signal Tap II Logic Analyzer 10.6. Hardware Debugging Guidelines 10.7. Categorizing Hardware Issues 10.8. EMIF Debug Toolkit Overview 10.9. Document Revision History
10.1. Resource and Planning Issues x
10.1.1. Dedicated DLL Resources 10.1.2. Dedicated IOE DQS Group Resources and Pins 10.1.3. Specific PLL Resources 10.1.4. Specific Global, Regional and Dual-Regional Clock Net Resources 10.1.5. Planning Your Design 10.1.6. Optimizing Design Utilization
10.2. Interface Configuration Performance Issues x
10.2.1. Interface Configuration Bottleneck and Efficiency Issues
10.3. Functional Issue Evaluation x
10.3.1. Correct Combination of the Quartus Prime Software and ModelSim* - Intel® FPGA Edition Device Models 10.3.2. Intel® IP Memory Model 10.3.3. Vendor Memory Model 10.3.4. Insufficient Memory in Your PC 10.3.5. Transcript Window Messages 10.3.6. Passing Simulation 10.3.7. Modifying the Example Driver to Replicate the Failure
10.4. Timing Issue Characteristics x
10.4.1. Evaluating FPGA Timing Issues 10.4.2. Evaluating External Memory Interface Timing Issues
10.5. Verifying Memory IP Using the Signal Tap II Logic Analyzer x
10.5.1. Signals to Monitor with the Signal Tap II Logic Analyzer
10.6. Hardware Debugging Guidelines x
10.6.1. Create a Simplified Design that Demonstrates the Same Issue 10.6.2. Measure Power Distribution Network 10.6.3. Measure Signal Integrity and Setup and Hold Margin 10.6.4. Vary Voltage 10.6.5. Use Freezer Spray and Heat Gun 10.6.6. Operate at a Lower Speed 10.6.7. Determine Whether the Issue Exists in Previous Versions of Software 10.6.8. Determine Whether the Issue Exists in the Current Version of Software 10.6.9. Try A Different PCB 10.6.10. Try Other Configurations 10.6.11. Debugging Checklist
10.7. Categorizing Hardware Issues x
10.7.1. Signal Integrity Issues 10.7.2. Hardware and Calibration Issues
10.7.1. Signal Integrity Issues x
10.7.1.1. Characteristics of Signal Integrity Issues 10.7.1.2. Evaluating SignaI Integrity Issues
10.7.1.2. Evaluating SignaI Integrity Issues x
10.7.1.2.1. Skew 10.7.1.2.2. Crosstalk 10.7.1.2.3. Power System 10.7.1.2.4. Clock Signals 10.7.1.2.5. Read Data Valid Window and Eye Diagram 10.7.1.2.6. Write Data Valid Window and Eye Diagram 10.7.1.2.7. OCT and ODT Usage
10.7.2. Hardware and Calibration Issues x
10.7.2.1. Evaluating Hardware and Calibration Issues
10.7.2.1. Evaluating Hardware and Calibration Issues x
10.7.2.1.1. Write Timing Margin 10.7.2.1.2. Read Timing Margin 10.7.2.1.3. Address and Command Timing Margin 10.7.2.1.4. Resynchronization Timing Margin 10.7.2.1.5. Postamble Timing Issues and Margin 10.7.2.1.6. Intermittent Issue Evaluation
11. Optimizing the Controller x
11.1. Factors Affecting Efficiency 11.2. Ways to Improve Efficiency 11.3. Document Revision History
11.1. Factors Affecting Efficiency x
11.1.1. Interface Standard 11.1.2. Bank Management Efficiency 11.1.3. Data Transfer
11.2. Ways to Improve Efficiency x
11.2.1. DDR2 SDRAM Controller 11.2.2. Auto-Precharge Commands 11.2.3. Additive Latency 11.2.4. Bank Interleaving 11.2.5. Command Queue Look-Ahead Depth 11.2.6. Additive Latency and Bank Interleaving 11.2.7. User-Controlled Refresh 11.2.8. Frequency of Operation 11.2.9. Burst Length 11.2.10. Series of Reads or Writes 11.2.11. Data Reordering 11.2.12. Starvation Control 11.2.13. Command Reordering 11.2.14. Bandwidth 11.2.15. Efficiency Monitor
12. PHY Considerations x
12.1. Core Logic and User Interface Data Rate 12.2. Hard and Soft Memory PHY 12.3. Sequencer 12.4. PLL, DLL and OCT Resource Sharing 12.5. Pin Placement Consideration 12.6. Document Revision History
13. Power Estimation Methods for External Memory Interfaces x
13.1. Performing Vector-Based Power Analysis with the Power Analyzer 13.2. Document Revision History
1. Planning Pin and FPGA Resources
2. DDR2 and DDR3 SDRAM Board Design Guidelines
3. Dual-DIMM DDR2 and DDR3 SDRAM Board Design Guidelines
4. LPDDR2 SDRAM Board Design Guidelines
5. RLDRAM II and RLDRAM 3 Board Design Guidelines
6. QDR II/II+ SRAM Board Design Guidelines
7. Implementing and Parameterizing Memory IP
8. Simulating Memory IP
9. Analyzing Timing of Memory IP
10. Debugging Memory IP
11. Optimizing the Controller
12. PHY Considerations
13. Power Estimation Methods for External Memory Interfaces

1.2.1. General Pin-Out Guidelines for Arria® 10 EMIF IP

You should follow the recommended guidelines when performing pin placement for all external memory interface pins targeting Arria® 10 devices, whether you are using the Altera hard memory controller or your own solution.

If you are using the Altera hard memory controller, you should employ the relative pin locations defined in the <variation_name>/altera_emif_arch_nf_version number/<synth|sim>/<variation_name>_altera_emif_arch_nf_version number_<unique ID>_readme.txt file, which is generated with your IP.

Note:
  1. EMIF IP pin-out requirements for the Arria® 10 Hard Processor Subsystem (HPS) are more restrictive than for a non-HPS memory interface. The HPS EMIF IP defines a fixed pin-out in the Quartus Prime IP file (.qip), based on the IP configuration. When targeting Arria® 10 HPS, you do not need to make location assignments for external memory interface pins. To obtain the HPS-specific external memory interface pin-out, compile the interface in the Quartus Prime software. Alternatively, consult the device handbook or the device pin-out files. For information on how you can customize the HPS EMIF pin-out, refer to Restrictions on I/O Bank Usage for Arria 10 EMIF IP with HPS.
  2. Ping Pong PHY, PHY only, RLDRAMx , QDRx and LPDDR3 are not supported with HPS.

Observe the following general guidelines for placing pins for your Arria 10 external memory interface:

  1. Ensure that the pins of a single external memory interface reside within a single I/O column.
  2. An external memory interface can occupy one or more banks in the same I/O column. When an interface must occupy multiple banks, ensure that those banks are adjacent to one another.
  3. Be aware that any pin in the same bank that is not used by an external memory interface is available for use as a general purpose I/O of compatible voltage and termination settings.
  4. All address and command pins and their associated clock pins (CK and CK#) must reside within a single bank. The bank containing the address and command pins is identified as the address and command bank.
  5. To minimize latency, when the interface uses more than two banks, you must select the center bank of the interface as the address and command bank.
  6. The address and command pins and their associated clock pins in the address and command bank must follow a fixed pin-out scheme, as defined in the Arria 10 External Memory Interface Pin Information File, which is available on www.altera.com.

    You do not have to place every address and command pin manually. If you assign the location for one address and command pin, the Fitter automatically places the remaining address and command pins.

    Note: The pin-out scheme is a hardware requirement that you must follow, and can vary according to the topology of the memory device. Some schemes require three lanes to implement address and command pins, while others require four lanes. To determine which scheme to follow, refer to the messages window during parameterization of your IP, or to the <variation_name>/altera_emif_arch_nf_<version>/<synth|sim>/<variation_name>_altera_emif_arch_nf_<version>_<unique ID>_readme.txt file after you have generated your IP.
  7. An unused I/O lane in the address and command bank can serve to implement a data group, such as a x8 DQS group. The data group must be from the same controller as the address and command signals.
  8. An I/O lane must not be used by both address and command pins and data pins.
  9. Place read data groups according to the DQS grouping in the pin table and pin planner. Read data strobes (such as DQS and DQS#) or read clocks (such as CQ and CQ# / QK and QK#) must reside at physical pins capable of functioning as DQS/CQ and DQSn/CQn for a specific read data group size. You must place the associated read data pins (such as DQ and Q), within the same group.
    Note:
    1. Unlike other device families, there is no need to swap CQ/CQ# pins in certain QDR II and QDR II+ latency configurations.
    2. QDR-IV requires that the polarity of all QKB/QKB# pins be swapped with respect to the polarity of the differential buffer inputs on the FPGA to ensure correct data capture on port B. All QKB pins on the memory device must be connected to the negative pins of the input buffers on the FPGA side, and all QKB# pins on the memory device must be connected to the positive pins of the input buffers on the FPGA side. Notice that the port names at the top-level of the IP already reflect this swap (that is, mem_qkb is assigned to the negative buffer leg, and mem_qkb_n is assigned to the positive buffer leg).
  10. You can use a single I/O lane to implement two x4 DQS groups. The pin table specifies which pins within an I/O lane can be used for the two pairs of DQS and DQS# signals. In addition, for x4 DQS groups you must observe the following rules:
    • There must be an even number of x4 groups in an external memory interface.
    • DQS group 0 and DQS group 1 must be placed in the same I/O lane. Similarly, DQS group 2 and group 3 must be in the same I/O lane. Generally, DQS group X and DQS group X+1 must be in the same I/O lane, where X is an even number.
  11. You should place the write data groups according to the DQS grouping in the pin table and pin planner. Output-only data clocks for QDR II, QDR II+, and QDR II+ Extreme, and RLDRAM 3 protocols need not be placed on DQS/DQSn pins, but must be placed on a differential pin pair. They must be placed in the same I/O bank as the corresponding DQS group.
    Note:

    For RLDRAM 3, x36 device, DQ[8:0] and DQ[26:18] are referenced to DK0/DK0#, and DQ[17:9] and DQ[35:27] are referenced to DK1/DK1#.

  12. For protocols and topologies with bidirectional data pins where a write data group consists of multiple read data groups, you should place the data groups and their respective write and read clock in the same bank to improve I/O timing.

    You do not need to specify the location of every data pin manually. If you assign the location for the read capture strobe/clock pin pairs, the Fitter will automatically place the remaining data pins.

  13. Ensure that DM/BWS pins are paired with a write data pin by placing one in an I/O pin and another in the pairing pin for that I/O pin. It is recommended—though not required—that you follow the same rule for DBI pins, so that at a later date you have the freedom to repurpose the pin as DM.
Note:
  1. x4 mode does not support DM/DBI, or Arria 10 EMIF IP for HPS.
  2. If you are using an Arria 10 EMIF IP-based RLDRAM II or RLDRAM 3 external memory interface, you should ensure that all the pins in a DQS group (that is, DQ, DM, DK, and QK) are placed in the same I/O bank. This requirement facilitates timing closure and is necessary for successful compilation of your design.

Multiple Interfaces in the Same I/O Column

To place multiple interfaces in the same I/O column, you must ensure that the global reset signals (global_reset_n) for each individual interface all come from the same input pin or signal.

I/O Banks Selection

  • For each memory interface, select consecutive I/O banks.
  • A memory interface can only span across I/O banks in the same I/O column.
  • Because I/O bank 2A is also employed for configuration-related operations, you can use it to construct external memory interfaces only when the following conditions are met:
    • The pins required for configuration related use (such as configuration bus for Fast Passive Parallel mode or control signals for Partial Reconfiguration) are never shared with pins selected for EMIF use, even after configuration is complete.
    • The I/O voltages are compatible.
    • The design has achieved a successful fit in the Quartus Prime software.

    Refer to the Arria 10 Device Handbook and the Configuration Function column of the Pin-Out files for more information about pins and configuration modes.

  • The number of I/O banks that you require depends on the memory interface width.
  • The 3V I/O bank does not support dynamic OCT or calibrated OCT. To place a memory interface in a 3V I/O bank, ensure that calibrated OCT is disabled for the address/command signals, the memory clock signals, and the data bus signals, during IP generation.
  • In some device packages, the number of I/O pins in some LVDS I/O banks is less that 48 pins.

Address/Command Pins Location

  • All address/command pins for a controller must be in a single I/O bank.
  • If your interface uses multiple I/O banks, the address/command pins must use the middle bank. If the number of banks used by the interface is even, any of the two middle I/O banks can be used for address/command pins.
  • Address/command pins and data pins cannot share an I/O lane but can share an I/O bank.
  • The address/command pin locations for the soft and hard memory controllers are predefined. In the External Memory Interface Pin Information for Devices spreadsheet, each index in the "Index within I/O bank" column denotes a dedicated address/command pin function for a given protocol. The index number of the pin specifies to which I/O lane the pin belongs:
    • I/O lane 0—Pins with index 0 to 11
    • I/O lane 1—Pins with index 12 to 23
    • I/O lane 2—Pins with index 24 to 35
    • I/O lane 3—Pins with index 36 to 47
  • For memory topologies and protocols that require only three I/O lanes for the address/command pins, use I/O lanes 0, 1, and 2.
  • Unused address/command pins in an I/O lane can be used as general-purpose I/O pins.

CK Pins Assignment

Assign the clock pin (CK pin) according to the number of I/O banks in an interface:

  • The number of I/O banks is odd—assign one CK pin to the middle I/O bank.
  • The number of I/O banks is even—assign the CK pin to any one of the middle two I/O banks.

Although the Fitter can automatically select the required I/O banks, Intel® recommends that you make the selection manually to reduce the pre-fit run time.

PLL Reference Clock Pin Placement

Place the PLL reference clock pin in the address/command bank. Other I/O banks may not have free pins that you can use as the PLL reference clock pin:

  • If you are sharing the PLL reference clock pin between several interfaces, the I/O banks must be consecutive.

The Arria 10 External Memory Interface IP does not support PLL cascading.

RZQ Pin Placement

You may place the RZQ pin in any I/O bank in an I/O column with the correct VCCIO and VCCPT for the memory interface I/O standard in use. The recommended location is in the address/command I/O bank.

DQ and DQS Pins Assignment

Intel® recommends that you assign the DQS pins to the remaining I/O lanes in the I/O banks as required:

  • Constrain the DQ and DQS signals of the same DQS group to the same I/O lane.
  • DQ signals from two different DQS groups cannot be constrained to the same I/O lane.

If you do not specify the DQS pins assignment, the Fitter will automatically select the DQS pins.

Sharing an I/O Bank Across Multiple Interfaces

If you are sharing an I/O bank across multiple external memory interfaces, follow these guidelines:

  • The interfaces must use the same protocol, voltage, data rate, frequency, and PLL reference clock.
  • You cannot use an I/O bank as the address/command bank for more than one interface. The memory controller and sequencer cannot be shared.
  • You cannot share an I/O lane. There is only one DQS input per I/O lane, and an I/O lane can only connect to one memory controller.

Ping Pong PHY Implementation

The Ping Pong PHY feature instantiates two hard memory controllers—one for the primary interface and one for the secondary interface. The hard memory controller I/O bank of the primary interface is used for address and command and is always adjacent and above the hard memory controller I/O bank of the secondary interface. All four lanes of the primary hard memory controller I/O bank are used for address and command.

When you use Ping Pong PHY, the EMIF IP exposes two independent Avalon-MM interfaces to user logic; these interfaces correspond to the two hard memory controllers inside the interface. Each Avalon-MM interface has its own set of clock and reset signals. Refer to Qsys Interfaces for more information on the additional signals exposed by Ping Pong PHY interfaces.

For more information on Ping Pong PHY in Arria 10, refer to Functional Description—Arria 10 EMIF, in this handbook. For pin allocation information for Arria 10 devices, refer to External Memory Interface Pin Information for Arria 10 Devices on www.altera.com.

Additional Requirements for DDR3 and DDR4 Ping-Pong PHY Interfaces

If you are using Ping Pong PHY with a DDR3 or DDR4 external memory interface on an Arria 10 device, follow these guidelines:

  • The address and command I/O bank must not contain any DQS group.
  • I/O banks that are above the address and command I/O bank must contain only data pins of the primary interface—that is, the interface with the lower DQS group indices.
  • The I/O bank immediately below the address and command I/O bank must contain at least one DQS group of the secondary interface—that is, the interface with the higher DQS group indices. This I/O bank can, but is not required to, contain DQS groups of the primary interface.
  • I/O banks that are two or more banks below the address and command I/O bank must contain only data pins of the secondary interface.
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