Visible to Intel only — GUID: shv1725926282519
Ixiasoft
Visible to Intel only — GUID: shv1725926282519
Ixiasoft
7.2. External Memory Interfaces (EMIF) IP - DDR5 DIMM Parameter Descriptions
Parameter Name | Description |
---|---|
DIMM Type | Specifies the type of DIMM that is used with this interface. Default value is UDIMM Legal values are: UDIMM, SODIMM, RDIMM (Identifier: MEM_DIMM_TYPE) |
Data DQ Width | Number of DQ pins per memory channel, used for data. Default value is 32 Legal values are: 32, 40 (Identifier: MEM_CHANNEL_DATA_DQ_WIDTH) |
ECC DQ Width | Number of additional DQ pins per memory channel, used for out-of-band ECC. If bigger than 0, controller will enable out-of-band ECC. Otherwise, out-of-band ECC will be disabled. Default value is 4 Legal values are: 0, 4, 8 (Identifier: MEM_CHANNEL_ECC_DQ_WIDTH) |
Die DQ Width | Number of DQ pins in each die that makes up the interface. For dual-die packages, this is the width of the die, not the width of full the package. Default value is 8 Legal values are: 4, 8, 16 (Identifier: MEM_DIE_DQ_WIDTH) |
Die Density | Capacity of each memory die (in Gbits), per channel per die. For dual-die packages, this is the density of each die, not the density of the full package. Default value is 8 Legal values are: 8, 16, 24, 32 (Identifier: MEM_DIE_DENSITY_GBITS) |
CS Width | Specifies the total number of CS pins used by each channel. Default value is 1 Legal values are: 1, 2 (Identifier: MEM_CHANNEL_CS_WIDTH) |
Memory Speedbin | Specifies the speedbin of the memory device(s) of which the interface consists. Default value is 5600AN Legal values are: 3200AN, 3200B, 3200BN, 3200C, 3600AN, 3600B, 3600BN, 3600C, 4000AN, 4000B, 4000BN, 4000C, 4400AN, 4400B, 4400BN, 4400C, 4800AN, 4800B, 4800BN, 4800C, 5200AN, 5200B, 5200BN, 5200C, 5600AN, 5600B, 5600BN, 5600C, 3DS_3200AN, 3DS_3200B, 3DS_3200BN, 3DS_3200C, 3DS_3600AN, 3DS_3600B, 3DS_3600BN, 3DS_3600C, 3DS_4000AN, 3DS_4000B, 3DS_4000BN, 3DS_4000C, 3DS_4400AN, 3DS_4400B, 3DS_4400BN, 3DS_4400C, 3DS_4800AN, 3DS_4800B, 3DS_4800BN, 3DS_4800C, 3DS_5200AN, 3DS_5200B, 3DS_5200BN, 3DS_5200C, 3DS_5600AN, 3DS_5600B, 3DS_5600BN, 3DS_5600C (Identifier: MEM_SPEEDBIN) |
Auto-set Memory Operating Frequency | if true, let IP select max frequency that this configuration can support for the current device speedgrade. If false, user can set custom value for operating frequency. Default value is true (Identifier: MEM_OPERATING_FREQ_MHZ_AUTOSET_EN) |
Memory Operating Frequency | Specifies the frequency at which the memory interface will run. Legal values are: 1600, 1800, 2000, 2200, 2400, 2600, 2800 (Identifier: MEM_OPERATING_FREQ_MHZ) |
Parameter Name | Description |
---|---|
Auto-set PLL Reference Clock Frequency | if true, let IP select max PLL refclk frequency that this configuration can support. If false, user can set custom value for PLL refclk frequency. Default value is true (Identifier: PHY_REFCLK_FREQ_MHZ_AUTOSET_EN) |
Enable Advanced List of PLL Reference Clock Frequencies | If true, provide extended list of possible refclk values. Otherwise, prune possible list of refclk values to a more reasonable length. Default value is false (Identifier: PHY_REFCLK_ADVANCED_SELECT_EN) |
Reference Clock Frequency | Specifies the reference clock frequency for the EMIF IOPLL. (Identifier: PHY_REFCLK_FREQ_MHZ) |
AC Placement | Indicates location on the device where the interface will reside (specifically, the location of the AC lanes in terms I/O BANK and TOP vs BOT part of the I/O BANK). Legal ranges are derived from device floorplan. Default value is BOT_BOT Legal values are: BOT_TOP, TOP_BOT, BOT_BOT (Identifier: PHY_AC_PLACEMENT) |
Auto-set Mainband Access Mode | if true, let IP select most likely usecase for the PHY_MAINBAND_ACCESS_MODE; if false, let user set a custom value for sideband access mode. Default value is true (Identifier: PHY_MAINBAND_ACCESS_MODE_AUTOSET_EN) |
Mainband Access Mode | Specifies the path through which the EMIF QHIP mainband interface is exposed to the user. The mainband interface is the AXI4 interface to the memory controller. Legal values are: NOC, ASYNC, SYNC (Identifier: PHY_MAINBAND_ACCESS_MODE) |
Auto-set Sideband Access Mode | if true, let IP select most likely usecase for the PHY_SIDEBAND_ACCESS_MODE; if false, let user set a custom value for sideband access mode. Default value is true (Identifier: PHY_SIDEBAND_ACCESS_MODE_AUTOSET_EN) |
Sideband Access Mode | Specifies the path through which the EMIF QHIP sideband interface is exposed to the user. The sideband interface is the AXI4-Lite interface to the IOSSM. Legal values are: NOC, FABRIC (Identifier: PHY_SIDEBAND_ACCESS_MODE) |
Pin Swizzle Map | Specifies the swizzle map for the data lanes and pins. (Identifier: PHY_SWIZZLE_MAP) |
Use Debug Toolkit | If enabled, the AXI-L port will be connected to SLD nodes, allowing for a system-console avalon manager interface to interact with this AXI-L subordinate interface. Default value is false (Identifier: DEBUG_TOOLS_EN) |
Instance ID | Instance ID of the EMIF IP. This is useful when using a discovery mechanism over the side-band interface, to identify which EMIF instance's mailbox is at which offset. If expecting to use a discovery mechanism in hardware, this parameter must be set uniquely for all EMIFs that share a sideband. Otherwise, this parameter can be ignored / kept at the default value. Default value is 0 Legal values are: from 0 to 6 (Identifier: INSTANCE_ID) |
Parameter Name | Description |
---|---|
Use ECC Autocorrection | If ECC is enabled, specifies whether single-bit-errors (SBEs) should be corrected or just reported. Default value is true (Identifier: CTRL_ECC_AUTOCORRECT_EN) |
Use Data Masking | Specifies whether Data Masking is enabled by the controller. When ECC is enabled, RMWs will occur (to recompute / write ECC), regardless of whether this is enabled. Default value is false (Identifier: CTRL_DM_EN) |
Parameter Name | Description |
---|---|
JEDEC Parameter | Name of JEDEC Parameter to explicitly override; the values will be applied and appear in the list below. Default value is Legal values are: MEM_OPERATING_SPEEDBIN, MEM_CL_CYC, MEM_CWL_CYC, MEM_WR_PREAMBLE_MODE, MEM_RD_PREAMBLE_MODE, MEM_WR_POSTAMBLE_MODE, MEM_RD_POSTAMBLE_MODE, MEM_FINE_GRANULARITY_REFRESH_MODE, MEM_TREFI1_NS, MEM_TREFI2_NS, MEM_TREFISB_NS, MEM_TCCD_S_CYC, MEM_TCCD_L_NS, MEM_TCCD_L_WR_NS, MEM_TCCD_L_WR2_NS, MEM_TRRD_S_CYC, MEM_TRRD_L_NS, MEM_TFAW_NS, MEM_TRFC1_NS, MEM_TRFC2_NS, MEM_TRFCSB_NS, MEM_TRCD_NS, MEM_TRP_NS, MEM_TRAS_NS, MEM_TRC_NS, MEM_TREFSBRD_NS, MEM_TWR_NS, MEM_TZQLAT_NS, MEM_TZQCAL_NS, MEM_TMRR_NS, MEM_TMRR_P_NS, MEM_TMRW_NS, MEM_TMRD_NS, MEM_TDFE_NS, MEM_TDLLK_NS, MEM_TWTR_S_NS, MEM_TWTR_L_NS, MEM_TRTP_NS, MEM_TPPD_CYC, MEM_TPD_NS, MEM_TACTPDEN_CYC, MEM_TPRPDEN_CYC, MEM_TREFPDEN_CYC, MEM_TXP_NS, MEM_TCPDED_CYC, MEM_TCSL_NS, MEM_TCKSRX_NS, MEM_TCSH_SREXIT_NS, MEM_TDQSCK_MIN_CYC, MEM_TDQSCK_MAX_CYC, MEM_TDQSCK_CYC, MEM_TWPRE_EN_CYC, MEM_TDQSS_CYC, MEM_TCKLCS_CYC, MEM_TWTRA_NS, MEM_SPD248_CK_CONTROL_ENABLE, MEM_SPD249_QCA_CS_ENABLE, MEM_SPD250_QCK_SIGNAL_DRIVER_STRENGTH, MEM_SPD252_QCA_QCS_SIGNAL_DRIVER_STRENGTH, MEM_SPD254_CK_CA_CS_SLEW_RATE, MEM_TRRD_DLR_NS, MEM_TFAW_DLR_NS, MEM_TCCD_DLR_NS (Identifier: JEDEC_OVERRIDE_TABLE_PARAM_NAME) |
Parameter Name | Description |
---|---|
Operating Speedbin | Specifies the operating speedbin of the memory device(s) for the current operating frequency and device speedbin. (Identifier: MEM_OPERATING_SPEEDBIN) |
Read Latency | Read Latency of the memory device in clock cycles. (Identifier: MEM_CL_CYC) |
Write Latency | Write Latency in clock cycles. (Identifier: MEM_CWL_CYC) |
Write Preamble Mode | Specifies the write preamble mode of the memory inteface (0: not supported, 1: 2-cycle preamble, 2: 3-cycle preamble, 3: 4-cycle preamble). (Identifier: MEM_WR_PREAMBLE_MODE) |
Read Preamble Mode | Specifies the read preamble mode of the memory inteface (0: 1-cycle preamble, 1: 2-cycle preamble, 2: 2-cycle DDR4-style preamble, 3: 3-cycle preamble, 4: 4-cycle preamble). (Identifier: MEM_RD_PREAMBLE_MODE) |
Write Postamble Mode | Specifies the write postamble mode of the memory inteface (0: 0.5-cycle postamble, 1: 1.5-cycle postamble). (Identifier: MEM_WR_POSTAMBLE_MODE) |
Read Postamble Mode | Specifies the read postamble mode of the memory inteface (0: 0.5-tCK postamble, 1: 1.5-tCK postamble). (Identifier: MEM_RD_POSTAMBLE_MODE) |
Memory Fine Granularity Refresh Mode | Specifies the Fine Granularity Refresh (FGR) mode of the memory interface. (Identifier: MEM_FINE_GRANULARITY_REFRESH_MODE) |
tREFI1 | Specifies the maximum average refresh interval in normal refresh mode in nanoseconds. (Identifier: MEM_TREFI1_NS) |
tREFI2 | Specifies the maximum average refresh interval in fine granularity refresh mode in nanoseconds. (Identifier: MEM_TREFI2_NS) |
tREFISB | Specifies the maximum average refresh interval in fine granularity and same bank refresh mode in nanoseconds. (Identifier: MEM_TREFISB_NS) |
tCCD_S | Specifies the CAS_n to CAS_n command delay for different bank group in cycles. (Identifier: MEM_TCCD_S_CYC) |
tCCD_L | Specifies the CAS_n to CAS_n command delay for same bank group in nanoseconds. (Identifier: MEM_TCCD_L_NS) |
tCCD_L_WR | Specifies the write CAS_n to write CAS_n command delay for same bank group in nanoseconds. (Identifier: MEM_TCCD_L_WR_NS) |
tCCD_L_WR2 | Specifies the write CAS_n to write CAS_n command delay for same bank group and the second write is not RMW, in nanoseconds. (Identifier: MEM_TCCD_L_WR2_NS) |
tRRD_S | Specifies the Activate-to-Activate command delay to different bank group for 1KB page size in cycles. (Identifier: MEM_TRRD_S_CYC) |
tRRD_L | Specifies the Activate-to-Activate command delay to same bank group for 1KB page size in cycles. (Identifier: MEM_TRRD_L_NS) |
tFAW | Specifies the four activate window for 1KB page size in nanoseconds. (Identifier: MEM_TFAW_NS) |
tRFC1 | Specifies the refresh operation delay in normal refresh mode in nanoseconds. (Identifier: MEM_TRFC1_NS) |
tRFC2 | Specifies the refresh operation delay in fine granularity refresh mode in nanoseconds. (Identifier: MEM_TRFC2_NS) |
tRFCSB | Specifies the refresh operation delay in fine granularity and same bank refresh mode in nanoseconds. (Identifier: MEM_TRFCSB_NS) |
tRCD | Specifies the Activate-to-internal-Read-or-Write delay in nanoseconds. (Identifier: MEM_TRCD_NS) |
tRP | Specifies the row precharge time in nanoseconds. (Identifier: MEM_TRP_NS) |
tRAS | Specifies the Activate-to-Precharge command period in nanoseconds. (Identifier: MEM_TRAS_NS) |
tRC (tRAS+tRP) | Specifies the Activate-to-Activate or Refresh command period in nanoseconds. (Identifier: MEM_TRC_NS) |
tREFSBRD | Specifies the same bank refresh to activate delay in nanoseconds. (Identifier: MEM_TREFSBRD_NS) |
tWR | Specifies the write recovery time in nanoseconds. (Identifier: MEM_TWR_NS) |
tZQLAT | Specifies the ZQ calibration latch time in nanoseconds. (Identifier: MEM_TZQLAT_NS) |
tZQCAL | Specifies the ZQ calibration time in nanoseconds. (Identifier: MEM_TZQCAL_NS) |
tMRR | Specifies the Mode Register Read (MRR) command period in nanoseconds. (Identifier: MEM_TMRR_NS) |
tMRR_P | Specifies the Mode Register Read (MRR) pattern to mode register read pattern command spacing in nanoseconds. (Identifier: MEM_TMRR_P_NS) |
tMRW | Specifies the Mode Register Write (MRW) command period in nanoseconds. (Identifier: MEM_TMRW_NS) |
tMRD | Specifies the Mode Register Set (MRS) command delay in nanoseconds. (Identifier: MEM_TMRD_NS) |
tDFE | Specifies the Decision Feedback Equalization (DFE) Mode Register Write update delay time in nanoseconds. (Identifier: MEM_TDFE_NS) |
tDLLK | Specifies the timing of DLLK in nanoseconds. (Identifier: MEM_TDLLK_NS) |
tWTR_S | Specifies the delay from start of internal write transaction to internal read command for different bank group in nanoseconds. (Identifier: MEM_TWTR_S_NS) |
tWTR_L | Specifies the delay from start of internal write transaction to internal read command for same bank group in nanoseconds. (Identifier: MEM_TWTR_L_NS) |
tRTP | Specifies the internal read command to precharge command delay in nanoseconds. (Identifier: MEM_TRTP_NS) |
tPPD | Specifies the Precharge-to-Precharge delay in cycles. (Identifier: MEM_TPPD_CYC) |
tPD | Specifies the minimum power down time in nanoseconds. (Identifier: MEM_TPD_NS) |
tACTPDEN | Specifies the timing of Activate command to power down entry command in cycles. (Identifier: MEM_TACTPDEN_CYC) |
tPRPDEN | Specifies the timing of Precharge All Banks (PREab), Precharge Same Bank (PREsb), or Normal Precharge (PREpb) to power down entry command in cycles. (Identifier: MEM_TPRPDEN_CYC) |
tREFPDEN | Specifies the timing of Refresh All Banks (REFab) or Refresh Same Bank (REFsb) command to power down entry command in cycles. (Identifier: MEM_TREFPDEN_CYC) |
tXP | Specifies the exit power down to next valid command in nanoseconds. (Identifier: MEM_TXP_NS) |
tCPDED | Specifies the command pass disable delay in nanoseconds. (Identifier: MEM_TCPDED_CYC) |
tCSL | Specifies the Self-Refresh CS_n low pulse width in nanoseconds. (Identifier: MEM_TCSL_NS) |
tCKSRX | Specifies the valid clock requirement before SRX in nanoseconds. (Identifier: MEM_TCKSRX_NS) |
tCSH_SREXIT | Specifies the self-refresh exit CS_n high pulse width in nanoseconds. (Identifier: MEM_TCSH_SREXIT_NS) |
tDQSCK_MIN | Specifies the minimum DQS_t, DQS_c rising edge output timing location from rising CK_t, CK_c in cycles. (Identifier: MEM_TDQSCK_MIN_CYC) |
tDQSCK_MAX | Specifies the maximum DQS_t, DQS_c rising edge output timing location from rising CK_t, CK_c in cycles. (Identifier: MEM_TDQSCK_MAX_CYC) |
tDQSCK | Specifies the DQS_t, DQS_c rising edge output timing location from rising CK_t, CK_c in cycles. (Identifier: MEM_TDQSCK_CYC) |
tWPRE_EN | Specifies the write preamble enable window in cycles. The window size depends on the write preamble mode. (Identifier: MEM_TWPRE_EN_CYC) |
tDQSS | Specifies the host and system voltage/temperature drift window of first rising DQS_t preamble edge relative to CAS Write Latency (CWL) CK_t-CK_c edge in cycles. (Identifier: MEM_TDQSS_CYC) |
tCKLCS | Specifies the valid clock requirement after SRE in cycles. (Identifier: MEM_TCKLCS_CYC) |
tWTRA | Specifies the delay from start of internal write transaction to internal read with auto precharge command for same bank in nanoseconds. (Identifier: MEM_TWTRA_NS) |
RDIMM Serial Presence Detect (SPD) Byte 248 | Specifies the value of SPD Byte 248 as an integer in decimal. (Identifier: MEM_SPD248_CK_CONTROL_ENABLE) |
RDIMM Serial Presence Detect (SPD) Byte 249 | Specifies the value of SPD Byte 249 as an integer in decimal. (Identifier: MEM_SPD249_QCA_CS_ENABLE) |
RDIMM Serial Presence Detect (SPD) Byte 250 | Specifies the value of SPD Byte 250 as an integer in decimal. (Identifier: MEM_SPD250_QCK_SIGNAL_DRIVER_STRENGTH) |
RDIMM Serial Presence Detect (SPD) Byte 252 | Specifies the value of SPD Byte 252 as an integer in decimal. (Identifier: MEM_SPD252_QCA_QCS_SIGNAL_DRIVER_STRENGTH) |
RDIMM Serial Presence Detect (SPD) Byte 254 | Specifies the value of SPD Byte 254 as an integer in decimal. (Identifier: MEM_SPD254_CK_CA_CS_SLEW_RATE) |
tRRD_DLR | Specifies the Activate-to-Activate command delay to different logical ranks in nanoseconds. Only applicable to 3D stacked devices. (Identifier: MEM_TRRD_DLR_NS) |
tFAW_DLR | Specifies the four activate window for different logical ranks in nanoseconds. Only applicable to 3D stacked devices. (Identifier: MEM_TFAW_DLR_NS) |
tCCD_DLR | Specifies the write CAS_n to write CAS_n command delay in different logical ranks, in nanoseconds. Only applicable to 3D stacked devices device. (Identifier: MEM_TCCD_DLR_NS) |
Parameter Name | Description |
---|---|
Analog Parameter | Name of Analog Parameter to explicitly override; the values will be applied and appear in the list below. Default value is Legal values are: PHY_TERM_X_R_S_AC_OUTPUT_OHM, PHY_TERM_X_R_S_CK_OUTPUT_OHM, PHY_TERM_X_R_S_DQ_OUTPUT_OHM, PHY_TERM_X_DQ_SLEW_RATE, PHY_TERM_X_R_T_DQ_INPUT_OHM, PHY_TERM_X_DQ_VREF, PHY_TERM_X_R_T_REFCLK_INPUT_OHM, PHY_DFE_X_TAP_1, PHY_DFE_X_TAP_2, PHY_DFE_X_TAP_3, PHY_DFE_X_TAP_4, MEM_ODT_DQ_X_TGT_WR, MEM_ODT_DQ_X_NON_TGT_WR, MEM_ODT_DQ_X_NON_TGT_RD, MEM_ODT_DQ_X_IDLE, MEM_ODT_DQ_X_RON, MEM_VREF_DQ_X_VALUE, MEM_ODT_CA_X_CA, MEM_ODT_CA_X_CS, MEM_ODT_CA_X_CK, MEM_VREF_CA_X_CA_VALUE, MEM_VREF_CA_X_CS_VALUE, MEM_DFE_X_TAP_1, MEM_DFE_X_TAP_2, MEM_DFE_X_TAP_3, MEM_DFE_X_TAP_4, MEM_RCD_DCA_IBT, MEM_RCD_DCS_IBT, MEM_RCD_DCK_IBT, MEM_RCD_DERROR_IBT (Identifier: ANALOG_PARAM_DERIVATION_PARAM_NAME) |
Parameter Name | Description |
---|---|
AC Drive Strength | This parameter allows you to change the input on chip termination settings for the selected I/O standard on the refclk input pins. Perform board simulation with IBIS models to determine the best settings for your design. Legal values are: SERIES_34_OHM_CAL, SERIES_40_OHM_CAL (Identifier: PHY_TERM_X_R_S_AC_OUTPUT_OHM) |
CK Drive Strength | This parameter allows you to change the output on chip termination settings for the selected I/O standard on the CK Pins. Perform board simulation with IBIS models to determine the best settings for your design. Legal values are: SERIES_34_OHM_CAL, SERIES_40_OHM_CAL (Identifier: PHY_TERM_X_R_S_CK_OUTPUT_OHM) |
FPGA DQ Drive Strength | This parameter allows you to change the output on chip termination settings for the selected I/O standard on the DQ Pins. Perform board simulation with IBIS models to determine the best settings for your design. Legal values are: SERIES_34_OHM_CAL, SERIES_40_OHM_CAL (Identifier: PHY_TERM_X_R_S_DQ_OUTPUT_OHM) |
DQ Slew Rate | Specifies the slew rate of the data bus pins. The slew rate (or edge rate) describes how quickly the signal can transition, measured in voltage per unit time. Perform board simulations to determine the slew rate that provides the best eye opening for the data bus signals. Legal values are: SLOW, MEDIUM, FAST, FASTEST (Identifier: PHY_TERM_X_DQ_SLEW_RATE) |
DQ Input Termination | This parameter allows you to change the input on chip termination settings for the selected I/O standard on the DQ Pins. Perform board simulation with IBIS models to determine the best settings for your design. Legal values are: RT_40_OHM_CAL, RT_50_OHM_CAL, RT_60_OHM_CAL (Identifier: PHY_TERM_X_R_T_DQ_INPUT_OHM) |
DQ Initial Vrefin | Specifies the initial value for the reference voltage on the data pins(Vrefin). The specified value serves as a starting point and may be overridden by calibration to provide better timing margins. Legal values are: from 0 to 100 (Identifier: PHY_TERM_X_DQ_VREF) |
PLL Reference Clock Input Termination | This parameter allows you to change the input on chip termination settings for the selected I/O standard on the refclk input pins. Perform board simulation with IBIS models to determine the best settings for your design. Legal values are: RT_OFF, RT_DIFF (Identifier: PHY_TERM_X_R_T_REFCLK_INPUT_OHM) |
PHY DFE Tap 1 | This parameter allows you to select the amount of bias used on tap 1 of the FPGA DFE. Legal values are: 0, n1, n2, n3, n4, n5, n6, n7, n8, n9, n10, n11, n12, n13, n14, n15, n16, n17, n18, n19, n20, n21, n22, n23, n24, n25, n26, n27, n28, n29,n30, n31.
Note: Refer to Table 159 in the PHY DFE Tap Bias Values for DDR5 topic for actual bias values.
(Identifier: PHY_DFE_X_TAP_1) |
PHY DFE Tap 2 | This parameter allows you to select the amount of bias used on tap 2 of the FPGA DFE. Legal values are: p7, p6, p5, p4, p3, p2, p1, 0, n1, n2, n3, n4, n5, n6, n7, n8.
Note: Refer to Table 159 in the PHY DFE Tap Bias Values for DDR5 topic for actual bias values.
(Identifier: PHY_DFE_X_TAP_2) |
PHY DFE Tap 3 | This parameter allows you to select the amount of bias used on tap 3 of the FPGA DFE. Legal values are: p7, p6, p5, p4, p3, p2, p1, 0, n1, n2, n3, n4, n5, n6, n7, n8.
Note: Refer to Table 159 in the PHY DFE Tap Bias Values for DDR5 topic for actual bias values.
(Identifier: PHY_DFE_X_TAP_3) |
PHY DFE Tap 4 | This parameter allows you to select the amount of bias used on tap 3 of the FPGA DFE. Legal values are: p3, p2, p1, 0, n1, n2, n3, n4.
Note: Refer to Table 159 in the PHY DFE Tap Bias Values for DDR5 topic for actual bias values.
(Identifier: PHY_DFE_X_TAP_4) |
Target Write Termination | Specifies the target termination to be used during a write. The value of this parameter represents X, where: termination = RZQ/X = (240 Ohm)/X. Legal values are: off, 1, 2, 3, 4, 5, 6, 7 (Identifier: MEM_ODT_DQ_X_TGT_WR) |
Non-Target Write Termination | Specifies the termination to be used for the non-target rank in a multi-rank configuration during a write. The value of this parameter represents X, where: termination = RZQ/X = (240 Ohm)/X. Legal values are: off, 1, 2, 3, 4, 5, 6, 7 (Identifier: MEM_ODT_DQ_X_NON_TGT_WR) |
Non-Target Read Termination | Specifies the termination to be used for the non-target rank in a multi-rank configuration during a read. The value of this parameter represents X, where: termination = RZQ/X = (240 Ohm)/X. Legal values are: off, 1, 2, 3, 4, 5, 6, 7 (Identifier: MEM_ODT_DQ_X_NON_TGT_RD) |
DQ Idle Termination | Specifies the termination to be used for RTT_PARK and DQS_RTT_PARK. For power savings it is recommended to leave this as disabled. The value of this parameter represents X, where: termination = RZQ/X = (240 Ohm)/X. Legal values are: off, 1, 2, 3, 4, 5, 6, 7 (Identifier: MEM_ODT_DQ_X_IDLE) |
Memory DQ Drive Strength | Specifies the termination to be used when driving read data from memory. The value of this parameter represents X, where: termination = RZQ/X = (240 Ohm)/X. Legal values are: 7, 6, 5 (Identifier: MEM_ODT_DQ_X_RON) |
VrefDQ Value | Specifies the initial VrefDQ value to be used. Legal values are: from 35.00 to 97.50 (Identifier: MEM_VREF_DQ_X_VALUE) |
CA Termination | Specifies the termination to be used for the CA bus. This setting only applies to Group B, Group A will always be unterminated. The value of this parameter represents X, where: termination = RZQ/X = (240 Ohm)/X. "off" means this termination is disabled. Legal values are: off, 0p5, 1, 2, 3, 4, 6 (Identifier: MEM_ODT_CA_X_CA) |
CS Termination | Specifies the termination to be used for the CS bus. This setting only applies to Group B, Group A will always be unterminated. The value of this parameter represents X, where: termination = RZQ/X = (240 Ohm)/X. "off" means this termination is disabled. Legal values are: off, 0p5, 1, 2, 3, 4, 6 (Identifier: MEM_ODT_CA_X_CS) |
CK Termination | Specifies the termination to be used for the CK bus. This setting only applies to Group B, Group A will always be unterminated. The value of this parameter represents X, where: termination = RZQ/X = (240 Ohm)/X. "off" means this termination is disabled. Legal values are: off, 0p5, 1, 2, 3, 4, 6 (Identifier: MEM_ODT_CA_X_CK) |
VrefCA Value | Specifies the initial VrefCA value to be used. Legal values are: from 35.00 to 97.50 (Identifier: MEM_VREF_CA_X_CA_VALUE) |
VrefCS Value | Specifies the initial VrefCS value to be used. Legal values are: from 35.00 to 97.50 (Identifier: MEM_VREF_CA_X_CS_VALUE) |
MEM DFE Tap 1 | This parameter allows you to select the amount of bias used on tap 1 of the memory DFE. Legal values are: p10, p9, p8, p7, p6, p5, p4, p3, p2, p1, 0, n1, n2, n3, n4, n5, n6, n7, n8, n9, n10, n11, n12, n13, n14, n15, n16, n17, n18, n19, n20, n21, n22, n23, n24, n25, n26, n27, n28, n29, n30, n31, n32, n33, n34, n35, n36, n37, n38, n39, n40.
Note: Refer to Table 160 in the MEM DFE Tap Bias Values for DDR5 topic for actual bias values.
(Identifier: MEM_DFE_X_TAP_1) |
MEM DFE Tap 2 | This parameter allows you to select the amount of bias used on tap 2 of the memory DFE. Legal values are: p15, p14, p13, p12, p11, p10, p9, p8, p7, p6, p5, p4, p3, p2, p1, 0, n1, n2, n3, n4, n5, n6, n7, n8, n9, n10, n11, n12, n13, n14, n15.
Note: Refer to Table 160 in the MEM DFE Tap Bias Values for DDR5 topic for actual bias values.
(Identifier: MEM_DFE_X_TAP_2) |
MEM DFE Tap 3 | This parameter allows you to select the amount of bias used on tap 3 of the memory DFE. Legal values are: p12, p11, p10, p9, p8, p7, p6, p5, p4, p3, p2, p1, 0, n1, n2, n3, n4, n5, n6, n7, n8, n9, n10, n11, n12.
Note: Refer to Table 160 in the MEM DFE Tap Bias Values for DDR5 topic for actual bias values.
(Identifier: MEM_DFE_X_TAP_3) |
MEM DFE Tap 4 | This parameter allows you to select the amount of bias used on tap 4 of the memory DFE. Legal values are: p9, p8, p7, p6, p5, p4, p3, p2, p1, 0, n1, n2, n3, n4, n5, n6, n7, n8, n9.
Note: Refer to Table 160 in the MEM DFE Tap Bias Values for DDR5 topic for actual bias values.
(Identifier: MEM_DFE_X_TAP_4) |
RCD CA Input Termination | This parameter allows you to select the input bus termination of RCD CA input bus. See JEDEC specifications on DDR4CD02 and DDR5RCD04 for the pins covered. The values map to specific termination strengths: 0 -> "60 Ohm", 1 -> "48 Ohm", 3 -> "OFF". Legal values are: 0, 1, 3 (Identifier: MEM_RCD_DCA_IBT) |
RCD CS Input Termination | This parameter allows you to select the input bus termination of RCD CS input bus. See JEDEC specifications on DDR4CD02 and DDR5RCD04 for the pins covered. The values map to specific termination strengths: 0 -> "60 Ohm", 1 -> "48 Ohm", 3 -> "OFF". Legal values are: 0, 1, 3 (Identifier: MEM_RCD_DCS_IBT) |
RCD CK Input Termination | This parameter allows you to select the input bus termination of CK input bus. See JEDEC specifications on DDR5RCD04 for the pins covered. The values map to specific termination strengths: 0 -> "60 Ohm", 1 -> "48 Ohm", 3 -> "OFF". Legal values are: 0, 1, 3 (Identifier: MEM_RCD_DCK_IBT) |
RCD Error Input Termination | This parameter allows you to select the input bus termination of DERROR input bus. See JEDEC specification on DDR5RCD04 for the pins covered. The values map to specific termination strengths: 0 -> "60 Ohm", 1 -> "48 Ohm", 3 -> "OFF". Legal values are: 0, 1, 3 (Identifier: MEM_RCD_DERROR_IBT) |
Parameter Name | Description |
---|---|
HDL Selection | This option lets you choose the format of HDL in which generated simulation and synthesis files are created. You can select either Verilog or VHDL. Default value is VERILOG Legal values are: VERILOG, VHDL (Identifier: EX_DESIGN_HDL_FORMAT) |
Generate Synthesis Fileset | Generate Synthesis Example Design. Default value is true (Identifier: EX_DESIGN_GEN_SYNTH) |
Generate Simulation Fileset | Generate Simulation Example Design. Default value is true (Identifier: EX_DESIGN_GEN_SIM) |
Parameter Name | Description |
---|---|
Auto-set User PLL Output Clock Frequency | if true, let IP select a reference clock frequency for the user PLL in the example design; if false, let user set a custom value for this parameter. Default value is true (Identifier: EX_DESIGN_USER_PLL_OUTPUT_FREQ_MHZ_AUTOSET_EN) |
User PLL Output Clock Frequency | Frequency of the core clock in MHz. This clock drives the traffic generator and NoC initiator (If in NoC mode). Default value is 570 (Identifier: EX_DESIGN_USER_PLL_OUTPUT_FREQ_MHZ) |
User PLL Reference Clock Frequency | PLL reference clock frequency in MHz for PLL supplying the core clock. Default value is 100 (Identifier: EX_DESIGN_USER_PLL_REFCLK_FREQ_MHZ) |
NOC Reference Clock Frequency | Reference Clock Frequency for the NOC control IP. Default value is 100 Legal values are: 25, 100, 125 (Identifier: EX_DESIGN_NOC_PLL_REFCLK_FREQ_MHZ) |
Parameter Name | Description |
---|---|
Traffic Generator Remote Access | Specifies whether the Traffic Generator control and status registers are accessible via JTAG, exported to the fabric, or just disabled. Default value is JTAG Legal values are: EXPORT, JTAG (Identifier: EX_DESIGN_TG_CSR_ACCESS_MODE) |
Traffic Generator Program | Specifies the traffic pattern to be run. Default value is MEDIUM Legal values are: SHORT, MEDIUM, LONG, INFINITE (Identifier: EX_DESIGN_TG_PROGRAM) |
Parameter Name | Description |
---|---|
Enable Performance Monitor for Channel 0 | If true, example design will include a Performance Monitor instance connected to Channel 0. Default value is false (Identifier: EX_DESIGN_PMON_CH0_EN) |
Enable Performance Monitor for Channel 1 | If true, example design will include a Performance Monitor instance connected to Channel 1. Default value is false (Identifier: EX_DESIGN_PMON_CH1_EN) |