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Ixiasoft
Visible to Intel only — GUID: hco1416490749768
Ixiasoft
3.8. Example of High-Speed Memory in Embedded Processor
Next-generation processors invest a large amount of die area to on-chip cache memory to prevent the execution pipelines from sitting idle. Unfortunately, these on-chip caches are limited in size, as a balance of performance, cost, and power must be taken into consideration. In many systems, external memories are used to add another level of cache. In high-performance systems, three levels of cache memory is common: level one (8 Kbytes is common) and level two (512 Kbytes) on chip, and level three off chip (2 Mbytes).
High-end servers, routers, and even video game systems are examples of high‑performance embedded products that require memory architectures that are both high speed and low latency. Advanced memory controllers are required to manage transactions between embedded processors and their memories. Intel® Arria® series and Intel® Stratix® series FPGAs optimally implement advanced memory controllers by utilizing their built-in DQS (strobe) phase shift circuitry. The following figure highlights some of the features available in an Intel® FPGA in an embedded application, where DDR2 SDRAM is used as the main memory and QDR II/II+ SRAM or RLDRAM II/3 is an external cache level.
One of the target markets of RLDRAM II/3 and QDR/QDR II SRAM is external cache memory. RLDRAM II and RLDRAM 3 have a read latency close to synchronous SRAM, but with the density of SDRAM. A sixteen times increase in external cache density is achievable with one RLDRAM II/3 versus that of synchronous static RAM (SSRAM). In contrast, consider QDR and QDR II SRAM for systems that require high bandwidth and minimal latency. Architecturally, the dual‑port nature of QDR and QDR II SRAM allows cache controllers to handle read data and instruction fetches completely independent of writes.