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1. Intel® MAX® 10 External Memory Interface Overview
2. Intel® MAX® 10 External Memory Interface Architecture and Features
3. Intel® MAX® 10 External Memory Interface Design Considerations
4. Intel® MAX® 10 External Memory Interface Implementation Guides
5. UniPHY IP References for Intel® MAX® 10 Devices
6. Intel® MAX® 10 External Memory Interface User Guide Archives
7. Document Revision History for the Intel® MAX® 10 External Memory Interface User Guide
2.1. Intel® MAX® 10 I/O Banks for External Memory Interface
2.2. Intel® MAX® 10 DQ/DQS Groups
2.3. Intel® MAX® 10 External Memory Interfaces Maximum Width
2.4. Intel® MAX® 10 Memory Controller
2.5. Intel® MAX® 10 External Memory Read Datapath
2.6. Intel® MAX® 10 External Memory Write Datapath
2.7. Intel® MAX® 10 Address/Command Path
2.8. Intel® MAX® 10 PHY Clock (PHYCLK) Network
2.9. Phase Detector for VT Tracking
2.10. On-Chip Termination
2.11. Phase-Locked Loop
2.12. Intel® MAX® 10 Low Power Feature
3.1. Intel® MAX® 10 DDR2 and DDR3 Design Considerations
3.2. LPDDR2 Design Considerations
3.3. Guidelines: Intel® MAX® 10 DDR3, DDR2, and LPDDR2 External Memory Interface I/O Limitation
3.4. Guidelines: Intel® MAX® 10 Board Design Requirement for DDR2, DDR3, and LPDDR2
3.5. Guidelines: Reading the Intel® MAX® 10 Pin-Out Files
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2.11. Phase-Locked Loop
For the external memory interface, the PLL generates the memory clock, write clock, capture clock, and the logic–core clock.
- The memory clock provides clock for DQS write strobe, and address and command signals.
- The write clock that is shifted –90° from the memory clock provides clock for DQ signals during memory writes.
You can use the PLL reconfiguration feature to calibrate the read–capture phase shift to balance the setup and hold margins. At startup, the sequencer calibrates the capture clock.
For external memory interfaces in Intel® MAX® 10 devices, you must use the top right PLL (PLL 2).
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