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1. Intel® MAX® 10 External Memory Interface Overview
2. Intel® MAX® 10 External Memory Interface Architecture and Features
3. Intel® MAX® 10 External Memory Interface Design Considerations
4. Intel® MAX® 10 External Memory Interface Implementation Guides
5. UniPHY IP References for Intel® MAX® 10 Devices
6. Intel® MAX® 10 External Memory Interface User Guide Archives
7. Document Revision History for the Intel® MAX® 10 External Memory Interface User Guide
2.1. Intel® MAX® 10 I/O Banks for External Memory Interface
2.2. Intel® MAX® 10 DQ/DQS Groups
2.3. Intel® MAX® 10 External Memory Interfaces Maximum Width
2.4. Intel® MAX® 10 Memory Controller
2.5. Intel® MAX® 10 External Memory Read Datapath
2.6. Intel® MAX® 10 External Memory Write Datapath
2.7. Intel® MAX® 10 Address/Command Path
2.8. Intel® MAX® 10 PHY Clock (PHYCLK) Network
2.9. Phase Detector for VT Tracking
2.10. On-Chip Termination
2.11. Phase-Locked Loop
2.12. Intel® MAX® 10 Low Power Feature
3.1. Intel® MAX® 10 DDR2 and DDR3 Design Considerations
3.2. LPDDR2 Design Considerations
3.3. Guidelines: Intel® MAX® 10 DDR3, DDR2, and LPDDR2 External Memory Interface I/O Limitation
3.4. Guidelines: Intel® MAX® 10 Board Design Requirement for DDR2, DDR3, and LPDDR2
3.5. Guidelines: Reading the Intel® MAX® 10 Pin-Out Files
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3.2.1.1. Intel® MAX® 10 Data and Data Clock (Data Strobe) Pins
For the Intel® MAX® 10 external memory interfaces, the DQ pins are the data pins for bidirectional read and write, and the DQS pins are the data strobe pins used only during write operations.
The Intel® MAX® 10 devices support bidirectional data strobes. Connect the bidirectional DQ data signals to the same Intel® MAX® 10 device DQ pins. The DQS pin is used only during write mode. In read mode, the Intel® MAX® 10 PHY generates the read capture clock internally and ignores the DQS signal. However, you must still connect DQS signal to the Intel® MAX® 10 DQS pin.