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1. Logic Array Blocks and Adaptive Logic Modules in Arria® 10 Devices
2. Embedded Memory Blocks in Arria® 10 Devices
3. Variable Precision DSP Blocks in Arria® 10 Devices
4. Clock Networks and PLLs in Arria® 10 Devices
5. I/O and High Speed I/O in Arria® 10 Devices
6. External Memory Interfaces in Arria® 10 Devices
7. Configuration, Design Security, and Remote System Upgrades in Arria® 10 Devices
8. SEU Mitigation for Arria® 10 Devices
9. JTAG Boundary-Scan Testing in Arria® 10 Devices
10. Power Management in Arria® 10 Devices
2.1. Types of Embedded Memory
2.2. Embedded Memory Design Guidelines for Arria® 10 Devices
2.3. Embedded Memory Features
2.4. Embedded Memory Modes
2.5. Embedded Memory Clocking Modes
2.6. Parity Bit in Embedded Memory Blocks
2.7. Byte Enable in Embedded Memory Blocks
2.8. Memory Blocks Packed Mode Support
2.9. Memory Blocks Address Clock Enable Support
2.10. Memory Blocks Asynchronous Clear
2.11. Memory Blocks Error Correction Code Support
2.12. Embedded Memory Blocks in Arria® 10 Devices Revision History
3.4.1. Input Register Bank
3.4.2. Pipeline Register
3.4.3. Pre-Adder for Fixed-Point Arithmetic
3.4.4. Internal Coefficient for Fixed-Point Arithmetic
3.4.5. Multipliers
3.4.6. Adder
3.4.7. Accumulator and Chainout Adder for Fixed-Point Arithmetic
3.4.8. Systolic Registers for Fixed-Point Arithmetic
3.4.9. Double Accumulation Register for Fixed-Point Arithmetic
3.4.10. Output Register Bank
4.2.1. PLL Usage
4.2.2. PLL Architecture
4.2.3. PLL Control Signals
4.2.4. Clock Feedback Modes
4.2.5. Clock Multiplication and Division
4.2.6. Programmable Phase Shift
4.2.7. Programmable Duty Cycle
4.2.8. PLL Cascading
4.2.9. Reference Clock Sources
4.2.10. Clock Switchover
4.2.11. PLL Reconfiguration and Dynamic Phase Shift
5.1. I/O and Differential I/O Buffers in Arria® 10 Devices
5.2. I/O Standards and Voltage Levels in Arria® 10 Devices
5.3. Altera FPGA I/O IP Cores for Arria® 10 Devices
5.4. I/O Resources in Arria® 10 Devices
5.5. Architecture and General Features of I/Os in Arria® 10 Devices
5.6. High Speed Source-Synchronous SERDES and DPA in Arria® 10 Devices
5.7. Using the I/Os and High Speed I/Os in Arria® 10 Devices
5.8. I/O and High Speed I/O in Arria® 10 Devices Revision History
5.6.1. Arria® 10 LVDS SERDES Usage Modes
5.6.2. SERDES Circuitry
5.6.3. SERDES I/O Standards Support in Arria® 10 Devices
5.6.4. Differential Transmitter in Arria® 10 Devices
5.6.5. Differential Receiver in Arria® 10 Devices
5.6.6. PLLs and Clocking for Arria® 10 Devices
5.6.7. Timing and Optimization for Arria® 10 Devices
5.6.6.1. Clocking Differential Transmitters
5.6.6.2. Clocking Differential Receivers
5.6.6.3. Guideline: LVDS Reference Clock Source
5.6.6.4. Guideline: Use PLLs in Integer PLL Mode for LVDS
5.6.6.5. Guideline: Use High-Speed Clock from PLL to Clock LVDS SERDES Only
5.6.6.6. Guideline: Pin Placement for Differential Channels
5.6.6.7. LVDS Interface with External PLL Mode
5.7.1. I/O and High-Speed I/O General Guidelines for Arria® 10 Devices
5.7.2. Mixing Voltage-Referenced and Non-Voltage-Referenced I/O Standards
5.7.3. Guideline: Maximum Current Driving I/O Pins While Turned Off and During Power Sequencing
5.7.4. Guideline: Using the I/O Pins in HPS Shared I/O Banks
5.7.5. Guideline: Maximum DC Current Restrictions
5.7.6. Guideline: LVDS SERDES IP Core Instantiation
5.7.7. Guideline: LVDS SERDES Pin Pairs for Soft-CDR Mode
5.7.8. Guideline: Minimizing High Jitter Impact on Arria® 10 GPIO Performance
5.7.9. Guideline: Usage of I/O Bank 2A for External Memory Interfaces
6.1. Key Features of the Arria® 10 External Memory Interface Solution
6.2. Memory Standards Supported by Arria® 10 Devices
6.3. External Memory Interface Widths in Arria® 10 Devices
6.4. External Memory Interface I/O Pins in Arria® 10 Devices
6.5. Memory Interfaces Support in Arria® 10 Device Packages
6.6. External Memory Interface IP Support in Arria® 10 Devices
6.7. External Memory Interface Architecture of Arria® 10 Devices
6.8. External Memory Interface in Arria® 10 Devices Revision History
6.5.1. Arria® 10 Package Support for DDR3 x40 with ECC
6.5.2. Arria® 10 Package Support for DDR3 x72 with ECC Single and Dual-Rank
6.5.3. Arria® 10 Package Support for DDR4 x40 with ECC
6.5.4. Arria® 10 Package Support for DDR4 x72 with ECC Single-Rank
6.5.5. Arria® 10 Package Support for DDR4 x72 with ECC Dual-Rank
6.5.6. HPS External Memory Interface Connections in Arria® 10
9.1. BST Operation Control
9.2. I/O Voltage for JTAG Operation
9.3. Performing BST
9.4. Enabling and Disabling IEEE Std. 1149.1 BST Circuitry
9.5. Guidelines for IEEE Std. 1149.1 Boundary-Scan Testing
9.6. IEEE Std. 1149.1 Boundary-Scan Register
9.7. JTAG Boundary-Scan Testing in Arria® 10 Devices Revision History
10.1. Power Consumption
10.2. Power Reduction Techniques
10.3. Power Sense Line
10.4. Voltage Sensor
10.5. Temperature Sensing Diode
10.6. Power-On Reset Circuitry
10.7. Power Sequencing Considerations for Arria® 10 Devices
10.8. Power Supply Design
10.9. Power Management in Arria® 10 Devices Revision History
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5.6.7.1.4. Receiver Skew Margin for Non-DPA Mode
Different modes of LVDS receivers use different specifications, which can help in deciding the ability to sample the received serial data correctly.
- In DPA mode, use DPA jitter tolerance instead of the receiver skew margin (RSKM).
- In non-DPA mode, use RSKM, TCCS, and sampling window (SW) specifications for high-speed source-synchronous differential signals in the receiver data path.
RSKM Equation
The RSKM equation expresses the relationship between RSKM, TCCS, and SW.
Figure 122. RSKM Equation
Conventions used for the equation:
- RSKM—the timing margin between the clock input of the receiver and the data input sampling window, and the jitter induced from core noise and I/O switching noise.
- Time unit interval (TUI)—time period of the serial data.
- SW—the period of time that the input data must be stable to ensure that the LVDS receiver samples the data successfully. The SW is a device property and varies according to device speed grade.
- TCCS—the timing difference between the fastest and the slowest output edges across channels driven by the same PLL. The TCCS measurement includes the tCO variation, clock, and clock skew.
Note: If there is additional board channel-to-channel skew, consider the total receiver channel-to-channel skew (RCCS) instead of TCCS. .
You must calculate the RSKM value, based on the data rate and device, to determine if the LVDS receiver can sample the data:
- A positive RSKM value, after deducting transmitter jitter, indicates that the LVDS receiver can sample the data properly.
- A negative RSKM value, after deducting transmitter jitter, indicates that the LVDS receiver cannot sample the data properly.
Figure 123. Differential High-Speed Timing Diagram and Timing Budget for Non-DPA Mode This figure shows the relationship between the RSKM, TCCS, and the SW of the receiver.
Example: RSKM Calculation
This example shows the RSKM calculation for FPGA devices at 1 Gbps data rate with a 200 ps board channel-to-channel skew.
- TCCS = 150 ps
- SW = 300 ps
- TUI = 1000 ps
- Total RCCS = TCCS + Board channel-to-channel skew = 150 ps + 200 ps = 350 ps
- RSKM = (TUI – SW – RCCS) / 2 = (1000 ps – 300 ps – 350 ps) / 2 = 175 ps
If the RSKM is greater than 0 ps after deducting transmitter jitter, the non-DPA receiver can work correctly.