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1. Release Information
2. External Memory Interfaces Arria® 10 FPGA IP Introduction
3. Arria® 10 EMIF IP Product Architecture
4. Arria® 10 EMIF IP End-User Signals
5. Arria® 10 EMIF – Simulating Memory IP
6. Arria® 10 EMIF IP for DDR3
7. Arria® 10 EMIF IP for DDR4
8. Arria® 10 EMIF IP for QDR II/II+/II+ Xtreme
9. Arria® 10 EMIF IP for QDR-IV
10. Arria® 10 EMIF IP for RLDRAM 3
11. Arria® 10 EMIF IP for LPDDR3
12. Arria® 10 EMIF IP Timing Closure
13. Optimizing Controller Performance
14. Arria® 10 EMIF IP Debugging
15. External Memory Interfaces Arria® 10 FPGA IP User Guide Archives
16. Document Revision History for External Memory Interfaces Arria® 10 FPGA IP User Guide
3.1. EMIF Architecture: Introduction
3.2. Arria® 10 EMIF Sequencer
3.3. Arria® 10 EMIF Calibration
3.4. Periodic OCT Recalibration
3.5. Arria® 10 EMIF Controller
3.6. Hardware Resource Sharing Among Multiple EMIFs
3.7. Arria® 10 EMIF for Hard Processor Subsystem
3.8. Arria® 10 EMIF Ping Pong PHY
3.9. Arria® 10 EMIF and SmartVID
4.1.1. Intel Arria 10 EMIF IP Interfaces for DDR3
4.1.2. Intel Arria 10 EMIF IP Interfaces for DDR4
4.1.3. Intel Arria 10 EMIF IP Interfaces for LPDDR3
4.1.4. Intel Arria 10 EMIF IP Interfaces for QDR II/II+/II+ Xtreme
4.1.5. Intel Arria 10 EMIF IP Interfaces for QDR-IV
4.1.6. Intel Arria 10 EMIF IP Interfaces for RLDRAM 3
4.1.1.1. pll_ref_clk for DDR3
4.1.1.2. pll_locked for DDR3
4.1.1.3. pll_extra_clk_0 for DDR3
4.1.1.4. pll_extra_clk_1 for DDR3
4.1.1.5. pll_extra_clk_2 for DDR3
4.1.1.6. pll_extra_clk_3 for DDR3
4.1.1.7. oct for DDR3
4.1.1.8. mem for DDR3
4.1.1.9. status for DDR3
4.1.1.10. afi_reset_n for DDR3
4.1.1.11. afi_clk for DDR3
4.1.1.12. afi_half_clk for DDR3
4.1.1.13. afi for DDR3
4.1.1.14. emif_usr_reset_n for DDR3
4.1.1.15. emif_usr_clk for DDR3
4.1.1.16. emif_usr_reset_n_sec for DDR3
4.1.1.17. emif_usr_clk_sec for DDR3
4.1.1.18. cal_debug_reset_n for DDR3
4.1.1.19. cal_debug_clk for DDR3
4.1.1.20. cal_debug_out_reset_n for DDR3
4.1.1.21. cal_debug_out_clk for DDR3
4.1.1.22. clks_sharing_master_out for DDR3
4.1.1.23. clks_sharing_slave_in for DDR3
4.1.1.24. clks_sharing_slave_out for DDR3
4.1.1.25. ctrl_amm for DDR3
4.1.1.26. ctrl_auto_precharge for DDR3
4.1.1.27. ctrl_user_priority for DDR3
4.1.1.28. ctrl_ecc_user_interrupt for DDR3
4.1.1.29. ctrl_ecc_readdataerror for DDR3
4.1.1.30. ctrl_mmr_slave for DDR3
4.1.1.31. hps_emif for DDR3
4.1.1.32. cal_debug for DDR3
4.1.1.33. cal_debug_out for DDR3
4.1.2.1. pll_ref_clk for DDR4
4.1.2.2. pll_locked for DDR4
4.1.2.3. pll_extra_clk_0 for DDR4
4.1.2.4. pll_extra_clk_1 for DDR4
4.1.2.5. pll_extra_clk_2 for DDR4
4.1.2.6. pll_extra_clk_3 for DDR4
4.1.2.7. oct for DDR4
4.1.2.8. mem for DDR4
4.1.2.9. status for DDR4
4.1.2.10. afi_reset_n for DDR4
4.1.2.11. afi_clk for DDR4
4.1.2.12. afi_half_clk for DDR4
4.1.2.13. afi for DDR4
4.1.2.14. emif_usr_reset_n for DDR4
4.1.2.15. emif_usr_clk for DDR4
4.1.2.16. emif_usr_reset_n_sec for DDR4
4.1.2.17. emif_usr_clk_sec for DDR4
4.1.2.18. cal_debug_reset_n for DDR4
4.1.2.19. cal_debug_clk for DDR4
4.1.2.20. cal_debug_out_reset_n for DDR4
4.1.2.21. cal_debug_out_clk for DDR4
4.1.2.22. clks_sharing_master_out for DDR4
4.1.2.23. clks_sharing_slave_in for DDR4
4.1.2.24. clks_sharing_slave_out for DDR4
4.1.2.25. ctrl_amm for DDR4
4.1.2.26. ctrl_auto_precharge for DDR4
4.1.2.27. ctrl_user_priority for DDR4
4.1.2.28. ctrl_ecc_user_interrupt for DDR4
4.1.2.29. ctrl_ecc_readdataerror for DDR4
4.1.2.30. ctrl_mmr_slave for DDR4
4.1.2.31. hps_emif for DDR4
4.1.2.32. cal_debug for DDR4
4.1.2.33. cal_debug_out for DDR4
4.1.3.1. pll_ref_clk for LPDDR3
4.1.3.2. pll_locked for LPDDR3
4.1.3.3. pll_extra_clk_0 for LPDDR3
4.1.3.4. pll_extra_clk_1 for LPDDR3
4.1.3.5. pll_extra_clk_2 for LPDDR3
4.1.3.6. pll_extra_clk_3 for LPDDR3
4.1.3.7. oct for LPDDR3
4.1.3.8. mem for LPDDR3
4.1.3.9. status for LPDDR3
4.1.3.10. afi_reset_n for LPDDR3
4.1.3.11. afi_clk for LPDDR3
4.1.3.12. afi_half_clk for LPDDR3
4.1.3.13. afi for LPDDR3
4.1.3.14. emif_usr_reset_n for LPDDR3
4.1.3.15. emif_usr_clk for LPDDR3
4.1.3.16. cal_debug_reset_n for LPDDR3
4.1.3.17. cal_debug_clk for LPDDR3
4.1.3.18. cal_debug_out_reset_n for LPDDR3
4.1.3.19. cal_debug_out_clk for LPDDR3
4.1.3.20. clks_sharing_master_out for LPDDR3
4.1.3.21. clks_sharing_slave_in for LPDDR3
4.1.3.22. clks_sharing_slave_out for LPDDR3
4.1.3.23. ctrl_user_priority for LPDDR3
4.1.3.24. ctrl_mmr_slave for LPDDR3
4.1.3.25. cal_debug for LPDDR3
4.1.3.26. cal_debug_out for LPDDR3
4.1.4.1. pll_ref_clk for QDR II/II+/II+ Xtreme
4.1.4.2. pll_locked for QDR II/II+/II+ Xtreme
4.1.4.3. pll_extra_clk_0 for QDR II/II+/II+ Xtreme
4.1.4.4. pll_extra_clk_1 for QDR II/II+/II+ Xtreme
4.1.4.5. pll_extra_clk_2 for QDR II/II+/II+ Xtreme
4.1.4.6. pll_extra_clk_3 for QDR II/II+/II+ Xtreme
4.1.4.7. oct for QDR II/II+/II+ Xtreme
4.1.4.8. mem for QDR II/II+/II+ Xtreme
4.1.4.9. status for QDR II/II+/II+ Xtreme
4.1.4.10. emif_usr_reset_n for QDR II/II+/II+ Xtreme
4.1.4.11. emif_usr_clk for QDR II/II+/II+ Xtreme
4.1.4.12. cal_debug_reset_n for QDR II/II+/II+ Xtreme
4.1.4.13. cal_debug_clk for QDR II/II+/II+ Xtreme
4.1.4.14. cal_debug_out_reset_n for QDR II/II+/II+ Xtreme
4.1.4.15. cal_debug_out_clk for QDR II/II+/II+ Xtreme
4.1.4.16. clks_sharing_master_out for QDR II/II+/II+ Xtreme
4.1.4.17. clks_sharing_slave_in for QDR II/II+/II+ Xtreme
4.1.4.18. clks_sharing_slave_out for QDR II/II+/II+ Xtreme
4.1.4.19. ctrl_amm for QDR II/II+/II+ Xtreme
4.1.4.20. cal_debug for QDR II/II+/II+ Xtreme
4.1.4.21. cal_debug_out for QDR II/II+/II+ Xtreme
4.1.5.1. pll_ref_clk for QDR-IV
4.1.5.2. pll_locked for QDR-IV
4.1.5.3. pll_extra_clk_0 for QDR-IV
4.1.5.4. pll_extra_clk_1 for QDR-IV
4.1.5.5. pll_extra_clk_2 for QDR-IV
4.1.5.6. pll_extra_clk_3 for QDR-IV
4.1.5.7. oct for QDR-IV
4.1.5.8. mem for QDR-IV
4.1.5.9. status for QDR-IV
4.1.5.10. afi_reset_n for QDR-IV
4.1.5.11. afi_clk for QDR-IV
4.1.5.12. afi_half_clk for QDR-IV
4.1.5.13. afi for QDR-IV
4.1.5.14. emif_usr_reset_n for QDR-IV
4.1.5.15. emif_usr_clk for QDR-IV
4.1.5.16. cal_debug_reset_n for QDR-IV
4.1.5.17. cal_debug_clk for QDR-IV
4.1.5.18. cal_debug_out_reset_n for QDR-IV
4.1.5.19. cal_debug_out_clk for QDR-IV
4.1.5.20. clks_sharing_master_out for QDR-IV
4.1.5.21. clks_sharing_slave_in for QDR-IV
4.1.5.22. clks_sharing_slave_out for QDR-IV
4.1.5.23. ctrl_amm for QDR-IV
4.1.5.24. cal_debug for QDR-IV
4.1.5.25. cal_debug_out for QDR-IV
4.1.6.1. pll_ref_clk for RLDRAM 3
4.1.6.2. pll_locked for RLDRAM 3
4.1.6.3. pll_extra_clk_0 for RLDRAM 3
4.1.6.4. pll_extra_clk_1 for RLDRAM 3
4.1.6.5. pll_extra_clk_2 for RLDRAM 3
4.1.6.6. pll_extra_clk_3 for RLDRAM 3
4.1.6.7. oct for RLDRAM 3
4.1.6.8. mem for RLDRAM 3
4.1.6.9. status for RLDRAM 3
4.1.6.10. afi_reset_n for RLDRAM 3
4.1.6.11. afi_clk for RLDRAM 3
4.1.6.12. afi_half_clk for RLDRAM 3
4.1.6.13. afi for RLDRAM 3
4.1.6.14. cal_debug_reset_n for RLDRAM 3
4.1.6.15. cal_debug_clk for RLDRAM 3
4.1.6.16. cal_debug_out_reset_n for RLDRAM 3
4.1.6.17. cal_debug_out_clk for RLDRAM 3
4.1.6.18. clks_sharing_master_out for RLDRAM 3
4.1.6.19. clks_sharing_slave_in for RLDRAM 3
4.1.6.20. clks_sharing_slave_out for RLDRAM 3
4.1.6.21. cal_debug for RLDRAM 3
4.1.6.22. cal_debug_out for RLDRAM 3
4.4.1. ctrlcfg0
4.4.2. ctrlcfg1
4.4.3. dramtiming0
4.4.4. sbcfg1
4.4.5. caltiming0
4.4.6. caltiming1
4.4.7. caltiming2
4.4.8. caltiming3
4.4.9. caltiming4
4.4.10. caltiming9
4.4.11. dramaddrw
4.4.12. sideband0
4.4.13. sideband1
4.4.14. sideband2
4.4.15. sideband3
4.4.16. sideband4
4.4.17. sideband5
4.4.18. sideband6
4.4.19. sideband7
4.4.20. sideband8
4.4.21. sideband9
4.4.22. sideband10
4.4.23. sideband11
4.4.24. sideband12
4.4.25. sideband13
4.4.26. dramsts
4.4.27. niosreserve0
4.4.28. niosreserve1
4.4.29. ecc3: ECC Error and Interrupt Configuration
4.4.30. ecc4: Status and Error Information
4.4.31. ecc5: Address of Most Recent SBE/DBE
4.4.32. ecc6: Address of Most Recent Correction Command Dropped
6.1.1. Intel Arria 10 EMIF IP DDR3 Parameters: General
6.1.2. Intel Arria 10 EMIF IP DDR3 Parameters: Memory
6.1.3. Intel Arria 10 EMIF IP DDR3 Parameters: Mem I/O
6.1.4. Intel Arria 10 EMIF IP DDR3 Parameters: FPGA I/O
6.1.5. Intel Arria 10 EMIF IP DDR3 Parameters: Mem Timing
6.1.6. Intel Arria 10 EMIF IP DDR3 Parameters: Board
6.1.7. Intel Arria 10 EMIF IP DDR3 Parameters: Controller
6.1.8. Intel Arria 10 EMIF IP DDR3 Parameters: Diagnostics
6.1.9. Intel Arria 10 EMIF IP DDR3 Parameters: Example Designs
7.1.1. Intel Arria 10 EMIF IP DDR4 Parameters: General
7.1.2. Intel Arria 10 EMIF IP DDR4 Parameters: Memory
7.1.3. Intel Arria 10 EMIF IP DDR4 Parameters: Mem I/O
7.1.4. Intel Arria 10 EMIF IP DDR4 Parameters: FPGA I/O
7.1.5. Intel Arria 10 EMIF IP DDR4 Parameters: Mem Timing
7.1.6. Intel Arria 10 EMIF IP DDR4 Parameters: Board
7.1.7. Intel Arria 10 EMIF IP DDR4 Parameters: Controller
7.1.8. Intel Arria 10 EMIF IP DDR4 Parameters: Diagnostics
7.1.9. Intel Arria 10 EMIF IP DDR4 Parameters: Example Designs
7.4.4.1. General Layout Guidelines
7.4.4.2. Layout Guidelines
7.4.4.3. Length Matching Rules
7.4.4.4. Spacing Guidelines
7.4.4.5. Layout Guidelines for DDR3 and DDR4 SDRAM Wide Interface (>72 bits)
7.4.4.6. Fly-By Network Design for Clock, Command, and Address Signals
7.4.4.7. Additional Layout Guidelines for DDR4 Twin-die Devices
8.1.1. Intel Arria 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: General
8.1.2. Intel Arria 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: Memory
8.1.3. Intel Arria 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: FPGA I/O
8.1.4. Intel Arria 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: Mem Timing
8.1.5. Intel Arria 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: Board
8.1.6. Intel Arria 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: Controller
8.1.7. Intel Arria 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: Diagnostics
8.1.8. Intel Arria 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: Example Designs
8.3.1.6.1. General Guidelines
8.3.1.6.2. QDR II, QDR II+ and QDR II+ Xtreme SRAM Command Signals
8.3.1.6.3. QDR II, QDR II+ and QDR II+ Xtreme SRAM Address Signals
8.3.1.6.4. QDR II, QDR II+, and QDR II+ Xtreme SRAM Clock Signals
8.3.1.6.5. QDR II, QDR II+ and QDR II+ Xtreme SRAM Data, BWS, and QVLD Signals
8.3.1.6.6. Resource Sharing Guidelines (Multiple Interfaces)
9.1.1. Intel Arria 10 EMIF IP QDR-IV Parameters: General
9.1.2. Intel Arria 10 EMIF IP QDR-IV Parameters: Memory
9.1.3. Intel Arria 10 EMIF IP QDR-IV Parameters: FPGA I/O
9.1.4. Intel Arria 10 EMIF IP QDR-IV Parameters: Mem Timing
9.1.5. Intel Arria 10 EMIF IP QDR-IV Parameters: Board
9.1.6. Intel Arria 10 EMIF IP QDR-IV Parameters: Controller
9.1.7. Intel Arria 10 EMIF IP QDR-IV Parameters: Diagnostics
9.1.8. Intel Arria 10 EMIF IP QDR-IV Parameters: Example Designs
10.1.1. Intel Arria 10 EMIF IP RLDRAM 3 Parameters: General
10.1.2. Intel Arria 10 EMIF IP RLDRAM 3 Parameters: Memory
10.1.3. Intel Arria 10 EMIF IP RLDRAM 3 Parameters: FPGA I/O
10.1.4. Intel Arria 10 EMIF IP RLDRAM 3 Parameters: Mem Timing
10.1.5. Intel Arria 10 EMIF IP RLDRAM 3 Parameters: Board
10.1.6. Intel Arria 10 EMIF IP RLDRAM 3 Parameters: Controller
10.1.7. Intel Arria 10 EMIF IP RLDRAM 3 Parameters: Diagnostics
10.1.8. Intel Arria 10 EMIF IP RLDRAM 3 Parameters: Example Designs
11.1.1. Intel Arria 10 EMIF IP LPDDR3 Parameters: General
11.1.2. Intel Arria 10 EMIF IP LPDDR3 Parameters: Memory
11.1.3. Intel Arria 10 EMIF IP LPDDR3 Parameters: Mem I/O
11.1.4. Intel Arria 10 EMIF IP LPDDR3 Parameters: FPGA I/O
11.1.5. Intel Arria 10 EMIF IP LPDDR3 Parameters: Mem Timing
11.1.6. Intel Arria 10 EMIF IP LPDDR3 Parameters: Board
11.1.7. Intel Arria 10 EMIF IP LPDDR3 Parameters: Controller
11.1.8. Intel Arria 10 EMIF IP LPDDR3 Parameters: Diagnostics
11.1.9. Intel Arria 10 EMIF IP LPDDR3 Parameters: Example Designs
13.4.1. Auto-Precharge Commands
13.4.2. Latency
13.4.3. Calibration
13.4.4. Bank Interleaving
13.4.5. Additive Latency and Bank Interleaving
13.4.6. User-Controlled Refresh
13.4.7. Frequency of Operation
13.4.8. Series of Reads or Writes
13.4.9. Data Reordering
13.4.10. Starvation Control
13.4.11. Command Reordering
13.4.12. Bandwidth
13.4.13. Enable Command Priority Control
14.1. Interface Configuration Performance Issues
14.2. Functional Issue Evaluation
14.3. Timing Issue Characteristics
14.4. Verifying Memory IP Using the Signal Tap II Logic Analyzer
14.5. Hardware Debugging Guidelines
14.6. Categorizing Hardware Issues
14.7. Debugging Arria® 10 EMIF IP
14.8. Using the Traffic Generator with the Generated Design Example
14.5.1. Create a Simplified Design that Demonstrates the Same Issue
14.5.2. Measure Power Distribution Network
14.5.3. Measure Signal Integrity and Setup and Hold Margin
14.5.4. Vary Voltage
14.5.5. Operate at a Lower Speed
14.5.6. Determine Whether the Issue Exists in Previous Versions of Software
14.5.7. Determine Whether the Issue Exists in the Current Version of Software
14.5.8. Try A Different PCB
14.5.9. Try Other Configurations
14.5.10. Debugging Checklist
14.7.1.1. User Interface
14.7.1.2. Communication
14.7.1.3. Setup and Use
14.7.1.4. Configuring Your EMIF IP for Use with the Debug Toolkit
14.7.1.5. Reports
14.7.1.6. On-Die Termination Calibration
14.7.1.7. Eye Diagram
14.7.1.8. Driver Margining for Arria® 10 EMIF IP
14.7.1.9. Example Tcl Script for Running the EMIF Debug Toolkit
14.7.1.10. Using the EMIF Debug Toolkit with Arria® 10 HPS Interfaces
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7.1.2. Intel Arria 10 EMIF IP DDR4 Parameters: Memory
Display Name | Description |
---|---|
Memory format | Specifies the format of the external memory device. The following formats are supported: Component - a Discrete memory device; UDIMM - Unregistered/Unbuffered DIMM where address/control, clock, and data are unbuffered; RDIMM - Registered DIMM where address/control and clock are buffered; LRDIMM - Load Reduction DIMM where address/control, clock, and data are buffered. LRDIMM reduces the load to increase memory speed and supports higher densities than RDIMM; SODIMM - Small Outline DIMM is similar to UDIMM but smaller in size and is typically used for systems with limited space. Some memory protocols may not be available in all formats. (Identifier: MEM_DDR4_FORMAT_ENUM) |
DQ width | Specifies the total number of data pins in the interface. (Identifier: MEM_DDR4_DQ_WIDTH) |
DQ pins per DQS group | Specifies the total number of DQ pins per DQS group. (Identifier: MEM_DDR4_DQ_PER_DQS) |
Number of clocks | Specifies the number of CK/CK# clock pairs exposed by the memory interface. Usually more than 1 pair is required for RDIMM/LRDIMM formats. The value of this parameter depends on the memory device selected; refer to the data sheet for your memory device. (Identifier: MEM_DDR4_CK_WIDTH) |
Number of chip selects | Specifies the total number of chip selects in the interface, up to a maximum of 4. This parameter applies to discrete components only. (Identifier: MEM_DDR4_DISCRETE_CS_WIDTH) |
Number of DIMMs | Total number of DIMMs. (Identifier: MEM_DDR4_NUM_OF_DIMMS) |
Chip ID width | Specifies the number of chip ID pins. Only applicable to registered and load-reduced DIMMs that use 3DS/TSV memory devices. (Identifier: MEM_DDR4_CHIP_ID_WIDTH) |
Number of physical ranks per DIMM | Number of ranks per DIMM. For LRDIMM, this represents the number of physical ranks on the DIMM behind the memory buffer (Identifier: MEM_DDR4_RANKS_PER_DIMM) |
Row address width | Specifies the number of row address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of address pins needed for access to all available rows. (Identifier: MEM_DDR4_ROW_ADDR_WIDTH) |
Column address width | Specifies the number of column address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of address pins needed for access to all available columns. (Identifier: MEM_DDR4_COL_ADDR_WIDTH) |
Bank address width | Specifies the number of bank address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of bank address pins needed for access to all available banks. (Identifier: MEM_DDR4_BANK_ADDR_WIDTH) |
Bank group width | Specifies the number of bank group pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of bank group pins needed for access to all available bank groups. (Identifier: MEM_DDR4_BANK_GROUP_WIDTH) |
Data mask | Indicates whether the interface uses data mask (DM) pins. This feature allows specified portions of the data bus to be written to memory (not available in x4 mode). One DM pin exists per DQS group. (Identifier: MEM_DDR4_DM_EN) |
Write DBI | Indicates whether the interface uses write data bus inversion (DBI). This feature provides better signal integrity and write margin. This feature is unavailable if Data Mask is enabled or in x4 mode. (Identifier: MEM_DDR4_WRITE_DBI) |
Read DBI | Specifies whether the interface uses read data bus inversion (DBI). Enable this feature for better signal integrity and read margin. This feature is not available in x4 configurations. (Identifier: MEM_DDR4_READ_DBI) |
Enable address mirroring for odd chip-selects | Enabling address mirroring for multi-CS discrete components. (Identifier: MEM_DDR4_DISCRETE_MIRROR_ADDRESSING_EN) |
Enable address mirroring for odd ranks | Enabling address mirroring for dual-rank or quad-rank DIMM. (Identifier: MEM_DDR4_MIRROR_ADDRESSING_EN) |
Enable ALERT#/PAR pins | Allows address/command calibration, which may provide better margins on the address/command bus. The alert_n signal is not accessible in the AFI or Avalon domains. This means there is no way to know whether a parity error has occurred during user mode. The parity pin is a dedicated pin in the address/command bank, but the alert_n pin can be placed in any bank that spans the memory interface. You should explicitly choose the location of the alert_n pin and place it in the address/command bank. Address/command parity is checked only during calibration, not in user mode. Because the alert_n pin is not accessible via the AFI or Avalon interfaces, changing the address/command parity latency option from the default value in advanced mode register settings, is not recommended. (Identifier: MEM_DDR4_ALERT_PAR_EN) |
ALERT# pin placement | Specifies placement for the mem_alert_n signal. If you select "I/O Lane with Address/Command Pins", you can pick the I/O lane and pin index in the add/cmd bank with the subsequent drop down menus. If you select "I/O Lane with DQS Group", you can specify the DQS group with which to place the mem_alert_n pin. If you select "Automatically select a location", the IP automatically selects a pin for the mem_alert_n signal. If you select this option, no additional location constraints can be applied to the mem_alert_n pin, or a fitter error will result during compilation. For optimum signal integrity, you should choose "I/O Lane with Address/Command Pins". For interfaces containing multiple memory devices, it is recommended to connect the ALERT# pins together to the ALERT# pin on the FPGA. (Identifier: MEM_DDR4_ALERT_N_PLACEMENT_ENUM) |
DQS group of ALERT# | Select the DQS group with which the ALERT# pin is placed. (Identifier: MEM_DDR4_ALERT_N_DQS_GROUP) |
Address/command I/O lane of ALERT# | Select the lane of the Address/Command I/O Tile where ALERT# pin is placed. (Identifier: MEM_DDR4_ALERT_N_AC_LANE) |
Pin index of ALERT# | Select the pin of the Address/Command I/O Lane where ALERT# pin is placed. (Identifier: MEM_DDR4_ALERT_N_AC_PIN) |
Display Name | Description |
---|---|
Memory CAS latency setting | Specifies the number of clock cycles between the read command and the availability of the first bit of output data at the memory device. Overall read latency equals the additive latency (AL) + the CAS latency (CL). Overall read latency depends on the memory device selected; refer to the datasheet for your device. (Identifier: MEM_DDR4_TCL) |
Memory write CAS latency setting | Specifies the number of clock cycles from the release of internal write to the latching of the first data in at the memory device. This value depends on the memory device selected; refer to the datasheet for your device. (Identifier: MEM_DDR4_WTCL) |
Memory additive CAS latency setting | Determines the posted CAS additive latency of the memory device. Enable this feature to improve command and bus efficiency, and increase system bandwidth. (Identifier: MEM_DDR4_ATCL_ENUM) |
Display Name | Description |
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Hide advanced mode register settings | Show or hide advanced mode register settings. Changing advanced mode register settings to non-default values is strongly discouraged. (Identifier: MEM_DDR4_HIDE_ADV_MR_SETTINGS) |
Addr/CMD parity latency | Additional latency incurred by enabling address/command parity check after calibration. Select a value to enable address/command parity with the latency associated with the selected value. Select Disable to disable address/command parity. Address/command is enabled automatically and as-needed during calibration regardless of the value of this setting. (Identifier: MEM_DDR4_AC_PARITY_LATENCY) |
Burst Length | Specifies the DRAM burst length which determines how many consecutive addresses should be accessed for a given read/write command. (Identifier: MEM_DDR4_BL_ENUM) |
Read Burst Type | Indicates whether accesses within a given burst are in sequential or interleaved order. Select sequential if you are using the Intel-provided memory controller. (Identifier: MEM_DDR4_BT_ENUM) |
Enable the DLL in memory device | Enable the DLL in memory device (Identifier: MEM_DDR4_DLL_EN) |
Auto self-refresh method | Indicates whether to enable or disable auto self-refresh. Auto self-refresh allows the controller to issue self-refresh requests, rather than manually issuing self-refresh in order for memory to retain data. (Identifier: MEM_DDR4_ASR_ENUM) |
Write CRC enable | Write CRC enable (Identifier: MEM_DDR4_WRITE_CRC) |
DDR4 geardown mode | Set DDR4 geardown mode for control signals at high frequency (Identifier: MEM_DDR4_GEARDOWN) |
Per-DRAM addressability | Per-DRAM addressability enable (Identifier: MEM_DDR4_PER_DRAM_ADDR) |
Temperature sensor readout | Temperature sensor readout enable (Identifier: MEM_DDR4_TEMP_SENSOR_READOUT) |
Fine granularity refresh | Increased frequency of refresh in exchange for shorter refresh. Shorter tRFC and increased cycle time can produce higher bandwidth. (Identifier: MEM_DDR4_FINE_GRANULARITY_REFRESH) |
MPR read format | Multipurpose register readout format (Identifier: MEM_DDR4_MPR_READ_FORMAT) |
Maximum power down mode | Maximum power down mode (Identifier: MEM_DDR4_MAX_POWERDOWN) |
Temperature controlled refresh range | Indicates temperature controlled refresh range where normal temperature mode covers 0C to 85C and extended mode covers 0C to 95C. (Identifier: MEM_DDR4_TEMP_CONTROLLED_RFSH_RANGE) |
Temperature controlled refresh enable | Indicates whether to enable temperature controlled refresh, which allows the device to adjust the internal refresh period to be longer than tREFI of the normal temperature range by skipping external refresh commands. (Identifier: MEM_DDR4_TEMP_CONTROLLED_RFSH_ENA) |
Internal VrefDQ monitor | Indicates whether to enable the internal VrefDQ monitor. (Identifier: MEM_DDR4_INTERNAL_VREFDQ_MONITOR) |
CS to Addr/CMD Latency | CS to Addr/CMD Latency (CAL mode) for idle state DRAM receiver power reduction (Identifier: MEM_DDR4_CAL_MODE) |
Self refresh abort | Self refresh abort for latency reduction. (Identifier: MEM_DDR4_SELF_RFSH_ABORT) |
Read preamble training mode enable | Read preamble training mode enable. (Identifier: MEM_DDR4_READ_PREAMBLE_TRAINING) |
Read preamble | Number of read preamble cycles. This mode register setting determines the number of cycles DQS (read) will go low before starting to toggle. It is strongly recommended to use the default read preamble setting. (Identifier: MEM_DDR4_READ_PREAMBLE) |
Write preamble | Write preamble cycles. It is strongly recommended to use the default write preamble setting. (Identifier: MEM_DDR4_WRITE_PREAMBLE) |
ODT input buffer during powerdown mode | Indicates whether to enable on-die termination (ODT) input buffer during powerdown mode. (Identifier: MEM_DDR4_ODT_IN_POWERDOWN) |
Addr/CMD persistent error | If set, Addr/CMD parity errors continue to be checked after a previous Addr/CMD parity error (Identifier: MEM_DDR4_AC_PERSISTENT_ERROR) |