External Memory Interfaces Intel® Agilex™ FPGA IP User Guide

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Date 11/03/2022
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Document Table of Contents
Document Table of Contents x
1. About the External Memory Interfaces Intel® Agilex™ FPGA IP 2. Intel® Agilex™ FPGA EMIF IP – Introduction 3. Intel® Agilex™ FPGA EMIF IP – Product Architecture 4. Intel® Agilex™ FPGA EMIF IP – End-User Signals 5. Intel® Agilex™ FPGA EMIF IP – Simulating Memory IP 6. Intel® Agilex™ FPGA EMIF IP – DDR4 Support 7. Intel® Agilex™ FPGA EMIF IP – QDR-IV Support 8. Intel® Agilex™ FPGA EMIF IP – Timing Closure 9. Intel® Agilex™ FPGA EMIF IP – I/O Timing Closure 10. Intel® Agilex™ FPGA EMIF IP – Controller Optimization 11. Intel® Agilex™ FPGA EMIF IP – Debugging 12. External Memory Interfaces Intel® Agilex™ FPGA IP User Guide Archives 13. Document Revision History for External Memory Interfaces Intel® Agilex™ FPGA IP User Guide
1. About the External Memory Interfaces Intel® Agilex™ FPGA IP x
1.1. Release Information
2. Intel® Agilex™ FPGA EMIF IP – Introduction x
2.1. Intel® Agilex™ EMIF IP Protocol and Feature Support 2.2. Intel® Agilex™ EMIF IP Design Flow 2.3. Intel® Agilex™ EMIF IP Design Checklist
3. Intel® Agilex™ FPGA EMIF IP – Product Architecture x
3.1. Intel® Agilex™ EMIF Architecture: Introduction 3.2. Intel® Agilex™ EMIF Sequencer 3.3. Intel® Agilex™ EMIF Calibration 3.4. Intel® Agilex™ EMIF Controller 3.5. User-requested Reset in Intel® Agilex™ EMIF IP 3.6. Intel® Agilex™ EMIF for Hard Processor Subsystem 3.7. Using a Custom Controller with the Hard PHY
3.1. Intel® Agilex™ EMIF Architecture: Introduction x
3.1.1. Intel® Agilex™ EMIF Architecture: I/O Subsystem 3.1.2. Intel® Agilex™ EMIF Architecture: I/O SSM 3.1.3. Intel® Agilex™ EMIF Architecture: I/O Bank 3.1.4. Intel® Agilex™ EMIF Architecture: I/O Lane 3.1.5. Intel® Agilex™ EMIF Architecture: Input DQS Clock Tree 3.1.6. Intel® Agilex™ EMIF Architecture: PHY Clock Tree 3.1.7. Intel® Agilex™ EMIF Architecture: PLL Reference Clock Networks 3.1.8. Intel® Agilex™ EMIF Architecture: Clock Phase Alignment
3.1.4. Intel® Agilex™ EMIF Architecture: I/O Lane x
3.1.4.1. Considerations for Designing DDR4 x72 Interface Together with an AVST x8/x16/x32 Configuration Scheme
3.3. Intel® Agilex™ EMIF Calibration x
3.3.1. Intel® Agilex™ Calibration Stages 3.3.2. Intel® Agilex™ Calibration Stages Descriptions 3.3.3. Intel® Agilex™ Calibration Flowchart 3.3.4. Intel® Agilex™ Calibration Algorithms
3.3.4. Intel® Agilex™ Calibration Algorithms x
3.3.4.1. Calibration Algorithms for DDR4 3.3.4.2. Calibration Algorithms for QDR-IV 3.3.4.3. Guidelines for Debugging Calibration Issues
3.3.4.1. Calibration Algorithms for DDR4 x
3.3.4.1.1. DDR4 Read Calibration 3.3.4.1.2. DDR4 Write Calibration
3.3.4.2. Calibration Algorithms for QDR-IV x
3.3.4.2.1. QDR-IV Read Calibration 3.3.4.2.2. QDR-IV Write Calibration
3.3.4.3. Guidelines for Debugging Calibration Issues x
3.3.4.3.1. Debugging Calibration Failure Using Information from the Calibration report 3.3.4.3.2. Debugging Address and Command Leveling Calibration Failure 3.3.4.3.3. Debugging Address and Command Deskew Failure 3.3.4.3.4. Debugging DQS Enable Failure 3.3.4.3.5. Debugging Read Deskew Calibration Failure 3.3.4.3.6. Debugging VREFIN Calibration Failure 3.3.4.3.7. Debugging LFIFO Calibration Failure 3.3.4.3.8. Debugging Write Leveling Failure 3.3.4.3.9. Debugging Write Deskew Calibration Failure 3.3.4.3.10. Debugging VREFOUT Calibration Failure
3.4. Intel® Agilex™ EMIF Controller x
3.4.1. Hard Memory Controller 3.4.2. Intel® Agilex™ Hard Memory Controller Rate Conversion Feature
3.4.1. Hard Memory Controller x
3.4.1.1. Hard Memory Controller Features 3.4.1.2. Hard Memory Controller Main Control Path 3.4.1.3. Data Buffer Controller
3.6. Intel® Agilex™ EMIF for Hard Processor Subsystem x
3.6.1. Restrictions on I/O Bank Usage for Intel® Agilex™ EMIF IP with HPS
4. Intel® Agilex™ FPGA EMIF IP – End-User Signals x
4.1. Intel® Agilex™ EMIF IP Interface and Signal Descriptions 4.2. Intel® Agilex™ EMIF IP AFI Signals 4.3. Intel® Agilex™ EMIF IP AFI 4.0 Timing Diagrams 4.4. Intel® Agilex™ EMIF IP Memory Mapped Register (MMR) Tables
4.1. Intel® Agilex™ EMIF IP Interface and Signal Descriptions x
4.1.1. Intel Agilex EMIF IP Interfaces for DDR4 4.1.2. Intel Agilex EMIF IP Interfaces for QDR-IV
4.1.1. Intel Agilex EMIF IP Interfaces for DDR4 x
4.1.1.1. local_reset_req for DDR4 4.1.1.2. local_reset_status for DDR4 4.1.1.3. pll_ref_clk for DDR4 4.1.1.4. pll_locked for DDR4 4.1.1.5. ac_parity_err for DDR4 4.1.1.6. oct for DDR4 4.1.1.7. mem for DDR4 4.1.1.8. status for DDR4 4.1.1.9. afi_reset_n for DDR4 4.1.1.10. afi_clk for DDR4 4.1.1.11. afi_half_clk for DDR4 4.1.1.12. afi for DDR4 4.1.1.13. emif_usr_reset_n for DDR4 4.1.1.14. emif_usr_clk for DDR4 4.1.1.15. ctrl_amm for DDR4 4.1.1.16. ctrl_amm_aux for DDR4 4.1.1.17. ctrl_auto_precharge for DDR4 4.1.1.18. ctrl_user_priority for DDR4 4.1.1.19. ctrl_ecc_user_interrupt for DDR4 4.1.1.20. ctrl_ecc_readdataerror for DDR4 4.1.1.21. ctrl_ecc_status for DDR4 4.1.1.22. ctrl_mmr_slave for DDR4 4.1.1.23. hps_emif for DDR4 4.1.1.24. emif_calbus for DDR4 4.1.1.25. emif_calbus_clk for DDR4
4.1.2. Intel Agilex EMIF IP Interfaces for QDR-IV x
4.1.2.1. local_reset_req for QDR-IV 4.1.2.2. local_reset_status for QDR-IV 4.1.2.3. pll_ref_clk for QDR-IV 4.1.2.4. pll_locked for QDR-IV 4.1.2.5. oct for QDR-IV 4.1.2.6. mem for QDR-IV 4.1.2.7. status for QDR-IV 4.1.2.8. afi_reset_n for QDR-IV 4.1.2.9. afi_clk for QDR-IV 4.1.2.10. afi_half_clk for QDR-IV 4.1.2.11. afi for QDR-IV 4.1.2.12. emif_usr_reset_n for QDR-IV 4.1.2.13. emif_usr_clk for QDR-IV 4.1.2.14. ctrl_amm for QDR-IV 4.1.2.15. emif_calbus for QDR-IV 4.1.2.16. emif_calbus_clk for QDR-IV
4.2. Intel® Agilex™ EMIF IP AFI Signals x
4.2.1. AFI Clock and Reset Signals 4.2.2. AFI Address and Command Signals 4.2.3. AFI Write Data Signals 4.2.4. AFI Read Data Signals 4.2.5. AFI Calibration Status Signals 4.2.6. AFI Tracking Management Signals 4.2.7. AFI Shadow Register Management Signals
4.3. Intel® Agilex™ EMIF IP AFI 4.0 Timing Diagrams x
4.3.1. AFI Address and Command Timing Diagrams 4.3.2. AFI Write Sequence Timing Diagrams 4.3.3. AFI Read Sequence Timing Diagrams 4.3.4. AFI Calibration Status Timing Diagram
4.4. Intel® Agilex™ EMIF IP Memory Mapped Register (MMR) Tables x
4.4.1. ctrlcfg0 4.4.2. ctrlcfg1 4.4.3. dramtiming0 4.4.4. sbcfg1 4.4.5. caltiming0 4.4.6. caltiming1 4.4.7. caltiming2 4.4.8. caltiming3 4.4.9. caltiming4 4.4.10. caltiming9 4.4.11. dramaddrw 4.4.12. sideband0 4.4.13. sideband1 4.4.14. sideband4 4.4.15. sideband6 4.4.16. sideband7 4.4.17. sideband9 4.4.18. sideband11 4.4.19. sideband12 4.4.20. sideband13 4.4.21. sideband14 4.4.22. dramsts 4.4.23. niosreserve0 4.4.24. niosreserve1 4.4.25. sideband16 4.4.26. ecc3: ECC Error and Interrupt Configuration 4.4.27. ecc4: Status and Error Information 4.4.28. ecc5: Address of Most Recent SBE/DBE 4.4.29. ecc6: Address of Most Recent Correction Command Dropped 4.4.30. ecc7: Extension for Address of Most Recent SBE/DBE 4.4.31. ecc8: Extension for Address of Most Recent Correction Command Dropped
5. Intel® Agilex™ FPGA EMIF IP – Simulating Memory IP x
5.1. Simulation Options 5.2. Simulation Walkthrough 5.3. Simulating the Design Example with Mentor Graphics* AXI4 Master BFM ( Intel® FPGA Edition)
5.2. Simulation Walkthrough x
5.2.1. Calibration Modes 5.2.2. Simulation Scripts 5.2.3. Functional Simulation with Verilog HDL 5.2.4. Functional Simulation with VHDL 5.2.5. Simulating the Design Example
5.3. Simulating the Design Example with Mentor Graphics* AXI4 Master BFM ( Intel® FPGA Edition) x
5.3.1. Overview of Steps 5.3.2. Generating the EMIF Design Example 5.3.3. Editing the Simulation Design Example with the Platform Designer 5.3.4. Editing the ed_sim.v File 5.3.5. Obtaining the master_test_program.sv File 5.3.6. Running the Simulation
6. Intel® Agilex™ FPGA EMIF IP – DDR4 Support x
6.1. Intel® Agilex™ FPGA EMIF IP Parameter Descriptions 6.2. Intel® Agilex™ External Memory Interfaces Intel® Calibration IP Parameters 6.3. Register Map IP-XACT Support for Intel® Agilex™ EMIF DDR4 IP 6.4. Intel® Agilex™ FPGA EMIF IP Pin and Resource Planning 6.5. DDR4 Board Design Guidelines
6.1. Intel® Agilex™ FPGA EMIF IP Parameter Descriptions x
6.1.1. Intel Agilex EMIF IP DDR4 Parameters: General 6.1.2. Intel Agilex EMIF IP DDR4 Parameters: Memory 6.1.3. Intel Agilex EMIF IP DDR4 Parameters: Mem I/O 6.1.4. Intel Agilex EMIF IP DDR4 Parameters: FPGA I/O 6.1.5. Intel Agilex EMIF IP DDR4 Parameters: Mem Timing 6.1.6. Intel Agilex EMIF IP DDR4 Parameters: Controller 6.1.7. Intel Agilex EMIF IP DDR4 Parameters: Diagnostics 6.1.8. Intel Agilex EMIF IP DDR4 Parameters: Example Designs
6.4. Intel® Agilex™ FPGA EMIF IP Pin and Resource Planning x
6.4.1. Intel® Agilex™ FPGA EMIF IP Interface Pins 6.4.2. Intel® Agilex™ FPGA EMIF IP Resources 6.4.3. Pin Guidelines for Intel® Agilex™ FPGA EMIF IP
6.4.1. Intel® Agilex™ FPGA EMIF IP Interface Pins x
6.4.1.1. Estimating Pin Requirements 6.4.1.2. DIMM Options 6.4.1.3. Maximum Number of Interfaces
6.4.2. Intel® Agilex™ FPGA EMIF IP Resources x
6.4.2.1. OCT 6.4.2.2. PLL
6.4.3. Pin Guidelines for Intel® Agilex™ FPGA EMIF IP x
6.4.3.1. Intel® Agilex™ FPGA EMIF IP Banks 6.4.3.2. General Guidelines 6.4.3.3. x4 DIMM Implementation 6.4.3.4. Specific Pin Connection Requirements 6.4.3.5. Command and Address Signals 6.4.3.6. Clock Signals 6.4.3.7. Data, Data Strobes, DM/DBI, and Optional ECC Signals
6.5. DDR4 Board Design Guidelines x
6.5.1. Terminations for DDR4 with Intel® Agilex™ Devices 6.5.2. Clamshell Topology 6.5.3. General Layout Routing Guidelines 6.5.4. Reference Stackup 6.5.5. Intel® Agilex™ EMIF-Specific Routing Guidelines for Various DDR4 Topologies 6.5.6. DDR4 Routing Guidelines: Discrete (Component) Topologies 6.5.7. Intel® Agilex™ EMIF Pin Swapping Guidelines
6.5.1. Terminations for DDR4 with Intel® Agilex™ Devices x
6.5.1.1. Dynamic On-Chip Termination (OCT) 6.5.1.2. Dynamic On-Die Termination (ODT) in DDR4 6.5.1.3. Choosing Terminations on Intel® Agilex™ FPGA Devices 6.5.1.4. On-Chip Termination Recommendations for Intel® Agilex™ FPGA Devices
6.5.5. Intel® Agilex™ EMIF-Specific Routing Guidelines for Various DDR4 Topologies x
6.5.5.1. One DIMM per Channel (1DPC) for UDIMM, RDIMM, LRDIMM, and SODIMM DDR4 Topologies 6.5.5.2. Two DIMMs per Channel (2DPC) for UDIMM, RDIMM, and LRDIMM DDR4 Topologies 6.5.5.3. Two DIMMs per Channel (2DPC) for SODIMM Topology 6.5.5.4. Skew Matching Guidelines for DIMM Configurations 6.5.5.5. Power Delivery Recommendations for the Memory / DIMM Side
6.5.6. DDR4 Routing Guidelines: Discrete (Component) Topologies x
6.5.6.1. Single Rank x 8 Discrete (Component) Topology 6.5.6.2. Single Rank x 16 Discrete (Component) Topology 6.5.6.3. ADDR/CMD Reference Voltage/RESET Signal Routing Guidelines for Single Rank x 8 and R Rank x 16 Discrete (Component) Topologies 6.5.6.4. Skew Matching Guidelines for DDR4 Discrete Configurations 6.5.6.5. Power Delivery Recommendations for DDR4 Discrete Configurations
7. Intel® Agilex™ FPGA EMIF IP – QDR-IV Support x
7.1. Intel® Agilex™ FPGA EMIF IP Parameter Descriptions 7.2. Intel® Agilex™ External Memory Interfaces Intel® Calibration IP Parameters 7.3. Intel® Agilex™ FPGA EMIF IP Pin and Resource Planning 7.4. QDR-IV Board Design Guidelines
7.1. Intel® Agilex™ FPGA EMIF IP Parameter Descriptions x
7.1.1. Intel Agilex EMIF IP QDR-IV Parameters: General 7.1.2. Intel Agilex EMIF IP QDR-IV Parameters: Memory 7.1.3. Intel Agilex EMIF IP QDR-IV Parameters: FPGA I/O 7.1.4. Intel Agilex EMIF IP QDR-IV Parameters: Mem Timing 7.1.5. Intel Agilex EMIF IP QDR-IV Parameters: Controller 7.1.6. Intel Agilex EMIF IP QDR-IV Parameters: Diagnostics 7.1.7. Intel Agilex EMIF IP QDR-IV Parameters: Example Designs
7.3. Intel® Agilex™ FPGA EMIF IP Pin and Resource Planning x
7.3.1. Intel® Agilex™ FPGA EMIF IP Interface Pins 7.3.2. Intel® Agilex™ FPGA EMIF IP Resources 7.3.3. Pin Guidelines for Intel® Agilex™ FPGA EMIF IP
7.3.1. Intel® Agilex™ FPGA EMIF IP Interface Pins x
7.3.1.1. Estimating Pin Requirements 7.3.1.2. Maximum Number of Interfaces
7.3.2. Intel® Agilex™ FPGA EMIF IP Resources x
7.3.2.1. OCT 7.3.2.2. PLL
7.3.3. Pin Guidelines for Intel® Agilex™ FPGA EMIF IP x
7.3.3.1. Intel® Agilex™ FPGA EMIF IP Banks 7.3.3.2. General Guidelines 7.3.3.3. QDR IV SRAM Commands and Addresses, AP, and AINV Signals 7.3.3.4. QDR IV SRAM Clock Signals 7.3.3.5. QDR IV SRAM Data, DINV, and QVLD Signals 7.3.3.6. Specific Pin Connection Requirements 7.3.3.7. Resource Sharing Guidelines (Multiple Interfaces)
7.4. QDR-IV Board Design Guidelines x
7.4.1. General Layout Routing Guidelines 7.4.2. Reference Stackup 7.4.3. Routing Guidelines for QDR-IV Topology 7.4.4. Intel® Agilex™ EMIF Design Guideline Summary
7.4.3. Routing Guidelines for QDR-IV Topology x
7.4.3.1. QDR-IV Single Device Memory Topology 7.4.3.2. Skew Matching Guidelines for QDR-IV Configurations 7.4.3.3. Power Delivery Recommendation for QDR-IV Configurations
8. Intel® Agilex™ FPGA EMIF IP – Timing Closure x
8.1. Timing Closure 8.2. Optimizing Timing
8.1. Timing Closure x
8.1.1. Timing Analysis
8.1.1. Timing Analysis x
8.1.1.1. PHY or Core
9. Intel® Agilex™ FPGA EMIF IP – I/O Timing Closure x
9.1. I/O Timing Closure Overview 9.2. Collateral Generated with Your EMIF IP 9.3. SPICE Decks 9.4. File Organization 9.5. Top-level Parameterization File 9.6. IP-Supplied Parameters that You Might Need to Override 9.7. Understanding the *_ip_parameters.dat File and Making a Mask Polygon 9.8. Multi-Rank Topology 9.9. Pin Parasitics 9.10. Mask Evaluation
9.3. SPICE Decks x
9.3.1. Address/Command Simulation Deck 9.3.2. FPGA Write Operation Simulation Deck 9.3.3. FPGA Read Operation Simulation Deck
10. Intel® Agilex™ FPGA EMIF IP – Controller Optimization x
10.1. Interface Standard 10.2. Bank Management Efficiency 10.3. Data Transfer 10.4. Improving Controller Efficiency
10.4. Improving Controller Efficiency x
10.4.1. Auto-Precharge Commands 10.4.2. Additive Latency 10.4.3. Bank Interleaving 10.4.4. Additive Latency and Bank Interleaving 10.4.5. User-Controlled Refresh 10.4.6. Frequency of Operation 10.4.7. Series of Reads or Writes 10.4.8. Data Reordering 10.4.9. Starvation Control 10.4.10. Command Reordering 10.4.11. Bandwidth 10.4.12. Enable Command Priority Control 10.4.13. Controller Pre-pay and Post-pay Refresh (DDR4 Only)
10.4.1. Auto-Precharge Commands x
10.4.1.1. Using Auto-precharge to Achieve Highest Memory Bandwidth for DDR4 Interfaces
11. Intel® Agilex™ FPGA EMIF IP – Debugging x
11.1. Interface Configuration Performance Issues 11.2. Functional Issue Evaluation 11.3. Timing Issue Characteristics 11.4. Verifying Memory IP Using the Signal Tap Logic Analyzer 11.5. Hardware Debugging Guidelines 11.6. Categorizing Hardware Issues 11.7. Debugging with the External Memory Interface Debug Toolkit 11.8. Using the Default Traffic Generator 11.9. Using the Configurable Traffic Generator (TG2) 11.10. EMIF On-Chip Debug Port 11.11. Efficiency Monitor
11.1. Interface Configuration Performance Issues x
11.1.1. Interface Configuration Bottleneck and Efficiency Issues
11.2. Functional Issue Evaluation x
11.2.1. Intel® IP Memory Model 11.2.2. Vendor Memory Model 11.2.3. Transcript Window Messages 11.2.4. Modifying the Example Driver to Replicate the Failure
11.3. Timing Issue Characteristics x
11.3.1. Evaluating FPGA Timing Issues 11.3.2. Evaluating External Memory Interface Timing Issues
11.4. Verifying Memory IP Using the Signal Tap Logic Analyzer x
11.4.1. Signals to Monitor with the Signal Tap Logic Analyzer
11.5. Hardware Debugging Guidelines x
11.5.1. Create a Simplified Design that Demonstrates the Same Issue 11.5.2. Measure Power Distribution Network 11.5.3. Measure Signal Integrity and Setup and Hold Margin 11.5.4. Vary Voltage 11.5.5. Operate at a Lower Speed 11.5.6. Determine Whether the Issue Exists in Previous Versions of Software 11.5.7. Determine Whether the Issue Exists in the Current Version of Software 11.5.8. Try A Different PCB 11.5.9. Try Other Configurations 11.5.10. Debugging Checklist
11.6. Categorizing Hardware Issues x
11.6.1. Signal Integrity Issues 11.6.2. Hardware and Calibration Issues
11.6.1. Signal Integrity Issues x
11.6.1.1. Characteristics of Signal Integrity Issues 11.6.1.2. Evaluating Signal Integrity Issues
11.6.1.2. Evaluating Signal Integrity Issues x
11.6.1.2.1. Skew 11.6.1.2.2. Crosstalk 11.6.1.2.3. Power System 11.6.1.2.4. Clock Signals 11.6.1.2.5. Address and Command Signals 11.6.1.2.6. Read Data Valid Window and Eye Diagram 11.6.1.2.7. Write Data Valid Window and Eye Diagram 11.6.1.2.8. OCT and ODT Usage
11.6.2. Hardware and Calibration Issues x
11.6.2.1. Postamble Timing Issues and Margin 11.6.2.2. Intermittent Issue Evaluation 11.6.2.3. Memory Timing Parameter Evaluation 11.6.2.4. Verify that the Board Has the Correct Memory Component or DIMM Installed
11.7. Debugging with the External Memory Interface Debug Toolkit x
11.7.1. Prerequisites for Using the EMIF Debug Toolkit 11.7.2. Configuring a Design to Use the Toolkit 11.7.3. Launching the EMIF Debug Toolkit 11.7.4. Using the EMIF Debug Toolkit 11.7.5. Exporting Tables 11.7.6. Viewing Reports Graphically in the Eye Viewer
11.7.2. Configuring a Design to Use the Toolkit x
11.7.2.1. Generating a Design Example with the Debug Toolkit 11.7.2.2. Creating a Design Example with Multiple External Memory Interfaces 11.7.2.3. Enabling the EMIF Toolkit in an Existing Design
11.7.4. Using the EMIF Debug Toolkit x
11.7.4.1. Memory Configuration Tab 11.7.4.2. Calibration Tab 11.7.4.3. Guidelines for Debugging Calibration Issues 11.7.4.4. Calibration Report Tab 11.7.4.5. Calibrate Termination Tab 11.7.4.6. Vref Margining Tab 11.7.4.7. Driver Margining Tab 11.7.4.8. ISSPs Tab 11.7.4.9. Pin Delay Settings Tab
11.7.4.2. Calibration Tab x
11.7.4.2.1. Rerunning Calibration 11.7.4.2.2. Rerunning the Traffic Generator
11.7.4.3. Guidelines for Debugging Calibration Issues x
11.7.4.3.1. Debugging Calibration Failure Using Information from the Calibration report 11.7.4.3.2. Debugging Address and Command Leveling Calibration Failure 11.7.4.3.3. Debugging Address and Command Deskew Failure 11.7.4.3.4. Debugging DQS Enable Failure 11.7.4.3.5. Debugging Read Deskew Calibration Failure 11.7.4.3.6. Debugging VREFIN Calibration Failure 11.7.4.3.7. Debugging LFIFO Calibration Failure 11.7.4.3.8. Debugging Write Leveling Failure 11.7.4.3.9. Debugging Write Deskew Calibration Failure 11.7.4.3.10. Debugging VREFOUT Calibration Failure
11.8. Using the Default Traffic Generator x
11.8.1. Reading the Default Traffic Generator Status 11.8.2. Running Infinite Traffic using the Default Traffic Generator 11.8.3. Changing the Reset Trigger of the Default Traffic Generator 11.8.4. Observing Generated Traffic with Signal Tap
11.9. Using the Configurable Traffic Generator (TG2) x
11.9.1. Enabling the Traffic Generator in a Design Example 11.9.2. Traffic Generator Block Description 11.9.3. Default Traffic Pattern 11.9.4. Configuration and Status Registers 11.9.5. User Pattern 11.9.6. Traffic Generator Status 11.9.7. Starting Traffic with the Traffic Generator 11.9.8. Traffic Generator Configuration User Interface
11.9.5. User Pattern x
11.9.5.1. Test Duration / Instruction pattern 11.9.5.2. Address Pattern 11.9.5.3. Data Pattern and Byte Enable
11.9.5.2. Address Pattern x
11.9.5.2.1. Address Generator Modes 11.9.5.2.2. Address Generator MSB Indices 11.9.5.2.3. Address Generator Effective Width 11.9.5.2.4. Address Generator Relative Frequencies 11.9.5.2.5. Address Pattern Examples - Basic Mode 11.9.5.2.6. Address Pattern Examples - Advanced Mode
11.9.8. Traffic Generator Configuration User Interface x
11.9.8.1. Connecting the Traffic Generator 11.9.8.2. Claiming/Releasing the TG Config Interface 11.9.8.3. Configuring the Traffic Generator 11.9.8.4. Traffic Generator Preset Selection 11.9.8.5. Traffic Generator Status Report 11.9.8.6. Examples of Configuring the TG2 Traffic Generator
11.10. EMIF On-Chip Debug Port x
11.10.1. Enabling the On-Chip Debug Port 11.10.2. I/O SSM calbus Bridge Data Structures and Usage 11.10.3. I/O SSM User-RAM Data Structures and Usage 11.10.4. Debug Interface Structure 11.10.5. Example: Reading Calibration Results and Margins with the On-Chip Debug Port
11.10.3. I/O SSM User-RAM Data Structures and Usage x
11.10.3.1. Parameter Tables 11.10.3.2. Parameter Table Enums
11.10.3.1. Parameter Tables x
11.10.3.1.1. Global Parameter Table 11.10.3.1.2. Per-interface Parameter Table Structure 11.10.3.1.3. Parameter Table Arrays
11.10.4. Debug Interface Structure x
11.10.4.1. Debug Data Structures 11.10.4.2. Debug Enums
11.11. Efficiency Monitor x
11.11.1. Enabling the Efficiency Monitor in a Design Example 11.11.2. Efficiency Monitor Block Descriptions 11.11.3. Control and Status Registers 11.11.4. Opening the Efficiency Monitor Toolkit
1. About the External Memory Interfaces Intel® Agilex™ FPGA IP
2. Intel® Agilex™ FPGA EMIF IP – Introduction
3. Intel® Agilex™ FPGA EMIF IP – Product Architecture
4. Intel® Agilex™ FPGA EMIF IP – End-User Signals
5. Intel® Agilex™ FPGA EMIF IP – Simulating Memory IP
6. Intel® Agilex™ FPGA EMIF IP – DDR4 Support
7. Intel® Agilex™ FPGA EMIF IP – QDR-IV Support
8. Intel® Agilex™ FPGA EMIF IP – Timing Closure
9. Intel® Agilex™ FPGA EMIF IP – I/O Timing Closure
10. Intel® Agilex™ FPGA EMIF IP – Controller Optimization
11. Intel® Agilex™ FPGA EMIF IP – Debugging
12. External Memory Interfaces Intel® Agilex™ FPGA IP User Guide Archives
13. Document Revision History for External Memory Interfaces Intel® Agilex™ FPGA IP User Guide

6.1.5. Intel Agilex EMIF IP DDR4 Parameters: Mem Timing

These parameters should be read from the table in the datasheet associated with the speed bin of the memory device (not necessarily the frequency at which the interface is running).
Table 85.  Group: Mem Timing / Parameters dependent on Speed Bin
Display Name Description
Speed bin The speed grade of the memory device used. This parameter refers to the maximum rate at which the memory device is specified to run. (Identifier: MEM_DDR4_SPEEDBIN_ENUM)
tIS (base) tIS (base) refers to the setup time for the Address/Command/Control (A) bus to the rising edge of CK. (Identifier: MEM_DDR4_TIS_PS)
tIS (base) AC level tIS (base) AC level refers to the voltage level which the address/command signal must cross and remain above during the setup margin window. The signal is considered stable only if it remains above this voltage level (for a logic 1) or below this voltage level (for a logic 0) for the entire setup period. (Identifier: MEM_DDR4_TIS_AC_MV)
tIH (base) tIH (base) refers to the hold time for the Address/Command (A) bus after the rising edge of CK. Depending on what AC level you have chosen for a design, the hold margin can vary (this variance is determined automatically when you choose the "tIH (base) AC level"). (Identifier: MEM_DDR4_TIH_PS)
tIH (base) DC level tIH (base) DC level refers to the voltage level which the address/command signal must not cross during the hold window. The signal is considered stable only if it remains above this voltage level (for a logic 1) or below this voltage level (for a logic 0) for the entire hold period. (Identifier: MEM_DDR4_TIH_DC_MV)
TdiVW_total TdiVW_total describes the minimum horizontal width of the DQ eye opening required by the receiver (memory device/DIMM). It is measured in UI (1UI = half the memory clock period). (Identifier: MEM_DDR4_TDIVW_TOTAL_UI)
VdiVW_total VdiVW_total describes the Rx Mask voltage, or the minimum vertical width of the DQ eye opening required by the receiver (memory device/DIMM). It is measured in mV. (Identifier: MEM_DDR4_VDIVW_TOTAL)
tDQSQ tDQSQ describes the latest valid transition of the associated DQ pins for a READ. tDQSQ specifically refers to the DQS, DQS# to DQ skew. It is the length of time between the DQS, DQS# crossing to the last valid transition of the slowest DQ pin in the DQ group associated with that DQS strobe. (Identifier: MEM_DDR4_TDQSQ_UI)
tQH tQH specifies the output hold time for the DQ in relation to DQS, DQS#. It is the length of time between the DQS, DQS# crossing to the earliest invalid transition of the fastest DQ pin in the DQ group associated with that DQS strobe. (Identifier: MEM_DDR4_TQH_UI)
tDVWp Data valid window per device per pin (Identifier: MEM_DDR4_TDVWP_UI)
tDQSCK tDQSCK describes the skew between the memory clock (CK) and the input data strobes (DQS) used for reads. It is the time between the rising data strobe edge (DQS, DQS#) relative to the rising CK edge. (Identifier: MEM_DDR4_TDQSCK_PS)
tDQSS tDQSS describes the skew between the memory clock (CK) and the output data strobes used for writes. It is the time between the rising data strobe edge (DQS, DQS#) relative to the rising CK edge. (Identifier: MEM_DDR4_TDQSS_CYC)
tQSH tQSH refers to the differential High Pulse Width, which is measured as a percentage of tCK. It is the time during which the DQS is high for a read. (Identifier: MEM_DDR4_TQSH_CYC)
tDSH tDSH specifies the write DQS hold time. This is the time difference between the rising CK edge and the falling edge of DQS, measured as a percentage of tCK. (Identifier: MEM_DDR4_TDSH_CYC)
tDSS tDSS describes the time between the falling edge of DQS to the rising edge of the next CK transition. (Identifier: MEM_DDR4_TDSS_CYC)
tWLS tWLS describes the write leveling setup time. It is measured from the rising edge of CK to the rising edge of DQS. (Identifier: MEM_DDR4_TWLS_CYC)
tWLH tWLH describes the write leveling hold time. It is measured from the rising edge of DQS to the rising edge of CK. (Identifier: MEM_DDR4_TWLH_CYC)
tINIT tINIT describes the time duration of the memory initialization after a device power-up. After RESET_n is de-asserted, wait for another 500us until CKE becomes active. During this time, the DRAM begins internal initialization; this occurs independently of external clocks. (Identifier: MEM_DDR4_TINIT_US)
tMRD The mode register set command cycle time, tMRD is the minimum time period required between two MRS commands. (Identifier: MEM_DDR4_TMRD_CK_CYC)
tRAS tRAS describes the activate to precharge duration. A row cannot be deactivated until the tRAS time has been met. Therefore tRAS determines how long the memory has to wait after a activate command before a precharge command can be issued to close the row. (Identifier: MEM_DDR4_TRAS_NS)
tRCD tRCD, row command delay, describes the active to read/write time. It is the amount of delay between the activation of a row through the RAS command and the access to the data through the CAS command. (Identifier: MEM_DDR4_TRCD_NS)
tRP tRP refers to the Precharge (PRE) command period. It describes how long it takes for the memory to disable access to a row by precharging and before it is ready to activate a different row. (Identifier: MEM_DDR4_TRP_NS)
tWR tWR refers to the Write Recovery time. It specifies the amount of clock cycles needed to complete a write before a precharge command can be issued. (Identifier: MEM_DDR4_TWR_NS)
Table 86.  Group: Mem Timing / Parameters dependent on Speed Bin, Operating Frequency, and Page Size
Display Name Description
tRRD_S tRRD_S refers to the Activate to Activate Command Period (short). It is the minimum time interval between two activate commands to the different bank groups. For 3DS devices, this parameter is the same as tRRD_S_slr (i.e. tRRD_S within the same logical rank) in the memory data sheet. (Identifier: MEM_DDR4_TRRD_S_CYC)
tRRD_L tRRD_L refers to the Activate to Activate Command Period (long). It is the minimum time interval (measured in memory clock cycles) between two activate commands to the same bank group. For 3DS devices, this parameter is the same as tRRD_L_slr (i.e. tRRD_L within the same logical rank) in the memory data sheet. (Identifier: MEM_DDR4_TRRD_L_CYC)
tRRD_dlr tRRD_dlr refers to the Activate to Activate Command Period to Different Logical Ranks. It is the minimum time interval (measured in memory clock cycles) between two activate commands to different logical ranks within a 3DS DDR4 device. (Identifier: MEM_DDR4_TRRD_DLR_CYC)
tFAW tFAW refers to the four activate window time. It describes the period of time during which only four banks can be active. For 3DS devices, this parameter is the same as tFAW_slr (i.e. tFAW within the same logical rank) in the memory data sheet. (Identifier: MEM_DDR4_TFAW_NS)
tCCD_S tCCD_S refers to the CAS_n-to-CAS_n delay (short). It is the minimum time interval between two read/write (CAS) commands to different bank groups. (Identifier: MEM_DDR4_TCCD_S_CYC)
tCCD_L tCCD_L refers to the CAS_n-to-CAS_n delay (long). It is the minimum time interval between two read/write (CAS) commands to the same bank group. (Identifier: MEM_DDR4_TCCD_L_CYC)
tWTR_S tWTR_S or Write Timing Parameter refers to the Write to Read period for different bank groups. It describes the delay from start of internal write transaction to internal read command, for accesses to the different bank group. The delay is measured from the first rising memory clock edge after the last write data is received to the rising memory clock edge when a read command is received. (Identifier: MEM_DDR4_TWTR_S_CYC)
tWTR_L tWTR_L or Write Timing Parameter refers to the Write to Read period for the same bank group. It describes the delay from start of internal write transaction to internal read command, for accesses to the same bank group. The delay is measured from the first rising memory clock edge after the last write data is received to the rising memory clock edge when a read command is received. (Identifier: MEM_DDR4_TWTR_L_CYC)
Table 87.  Group: Mem Timing / Parameters dependent on Density and Temperature
Display Name Description
tRFC tRFC refers to the Refresh Cycle Time. It is the amount of delay after a refresh command before an activate command can be accepted by the memory. This parameter is dependent on the memory density and is necessary for proper hardware functionality. For 3DS devices, this parameter is the same as tRFC_slr (i.e. tRFC within the same logical rank) in the memory data sheet. (Identifier: MEM_DDR4_TRFC_NS)
tREFI tREFI refers to the average periodic refresh interval. It is the maximum amount of time the memory can tolerate in between each refresh command (Identifier: MEM_DDR4_TREFI_US)
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