Intel® MAX® 10 General Purpose I/O User Guide

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ID 683751
Date 1/27/2022
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Document Table of Contents
Document Table of Contents x
1. Intel® MAX® 10 I/O Overview 2. Intel® MAX® 10 I/O Architecture and Features 3. Intel® MAX® 10 I/O Design Considerations 4. Intel® MAX® 10 I/O Implementation Guides 5. GPIO Lite Intel® FPGA IP References 6. Intel® MAX® 10 General Purpose I/O User Guide Archives 7. Document Revision History for Intel® MAX® 10 General Purpose I/O User Guide
1. Intel® MAX® 10 I/O Overview x
1.1. Intel® MAX® 10 Devices I/O Resources Per Package 1.2. Intel® MAX® 10 I/O Vertical Migration Support
2. Intel® MAX® 10 I/O Architecture and Features x
2.1. Intel® MAX® 10 I/O Standards Support 2.2. Intel® MAX® 10 I/O Elements 2.3. Intel® MAX® 10 I/O Buffers 2.4. I/O Standards Termination
2.1. Intel® MAX® 10 I/O Standards Support x
2.1.1. Intel® MAX® 10 I/O Standards Voltage and Pin Support
2.2. Intel® MAX® 10 I/O Elements x
2.2.1. Intel® MAX® 10 I/O Banks Architecture 2.2.2. Intel® MAX® 10 I/O Banks Performance 2.2.3. Intel® MAX® 10 I/O Banks Locations
2.3. Intel® MAX® 10 I/O Buffers x
2.3.1. Schmitt-Trigger Input Buffer 2.3.2. Programmable I/O Buffer Features
2.3.2. Programmable I/O Buffer Features x
2.3.2.1. Programmable Open Drain 2.3.2.2. Programmable Bus Hold 2.3.2.3. Programmable Pull-Up Resistor 2.3.2.4. Programmable Current Strength 2.3.2.5. Programmable Output Slew Rate Control 2.3.2.6. Programmable IOE Delay 2.3.2.7. PCI Clamp Diode 2.3.2.8. Programmable Pre-Emphasis 2.3.2.9. Programmable Differential Output Voltage 2.3.2.10. Programmable Emulated Differential Output 2.3.2.11. Programmable Dynamic Power Down
2.4. I/O Standards Termination x
2.4.1. Voltage-Referenced I/O Standards Termination 2.4.2. Differential I/O Standards Termination 2.4.3. Intel® MAX® 10 On-Chip I/O Termination
2.4.3. Intel® MAX® 10 On-Chip I/O Termination x
2.4.3.1. OCT Calibration 2.4.3.2. RS OCT in Intel® MAX® 10 Devices
3. Intel® MAX® 10 I/O Design Considerations x
3.1. Guidelines: VCCIO Range Considerations 3.2. Guidelines: Voltage-Referenced I/O Standards Restriction 3.3. Guidelines: Enable Clamp Diode for LVTTL/LVCMOS Input Buffers 3.4. Guidelines: Adhere to the LVDS I/O Restrictions Rules 3.5. Guidelines: I/O Restriction Rules 3.6. Guidelines: Placement Restrictions for 1.0 V I/O Pin 3.7. Guidelines: Analog-to-Digital Converter I/O Restriction 3.8. Guidelines: External Memory Interface I/O Restrictions 3.9. Guidelines: Dual-Purpose Configuration Pin 3.10. Guidelines: Clock and Data Input Signal for Intel® MAX® 10 E144 Package
3.6. Guidelines: Placement Restrictions for 1.0 V I/O Pin x
3.6.1. Calculating the Total Inductance for 1.0 V Pin Placement
4. Intel® MAX® 10 I/O Implementation Guides x
4.1. GPIO Lite Intel FPGA IP GPIO Lite Intel® FPGA IP 4.2. Verifying Pin Migration Compatibility
4.1. GPIO Lite Intel FPGA IP GPIO Lite Intel® FPGA IP x
4.1.1. GPIO Lite Intel® FPGA IP Data Paths
4.1.1. GPIO Lite Intel® FPGA IP Data Paths x
4.1.1.1. DDR Input Path 4.1.1.2. DDR Output Path with Output Enable
5. GPIO Lite Intel® FPGA IP References x
5.1. GPIO Lite Intel® FPGA IP Parameter Settings 5.2. GPIO Lite Intel® FPGA IP Interface Signals
1. Intel® MAX® 10 I/O Overview
2. Intel® MAX® 10 I/O Architecture and Features
3. Intel® MAX® 10 I/O Design Considerations
4. Intel® MAX® 10 I/O Implementation Guides
5. GPIO Lite Intel® FPGA IP References
6. Intel® MAX® 10 General Purpose I/O User Guide Archives
7. Document Revision History for Intel® MAX® 10 General Purpose I/O User Guide

3.6. Guidelines: Placement Restrictions for 1.0 V I/O Pin

To minimize the impact of simultaneous switching noise (SSN) on the I/O pins, ensure that the total mutual inductance (Lm) of the I/O pins in usage surrounding the 1.0 V I/O does not exceed the guidelines in the following table.
Table 16.  Total Lm Guidelines for Pins Surrounding the 1.0 V Pin
I/O Standard of Surrounding Pins Locations Relative to 1.0 V Pin Total Lm of Surrounding Pins
1.0 V Within the same bank The total Lm of the surrounding pins in the bank must not exceed 7.41 nH.
In an adjacent bank The total Lm of the surrounding pins in the adjacent bank must not exceed 7.41 nH.
Within the same bank and in an adjacent bank The sum of the total Lm of the surrounding pins in both banks must not exceed 7.41 nH.
Other than 1.0 V In an adjacent bank The total Lm of the surrounding pins in the adjacent bank must not exceed 1 nH.

Example scenarios where the 1.0 V pin is in bank 3 and surrounding pins are in banks 3 and 4:

  • Bank 3 and 4 are both 1.0 V—total Lm of all surrounding pins in both banks must not exceed 7.41 nH.
  • Bank 3 is 1.0 V but bank 4 is 2.5 V—total Lm of surrounding pins in bank 3 must not exceed 7.41 nH and total Lm in bank 4 must not exceed 1 nH.

Section Content
Calculating the Total Inductance for 1.0 V Pin Placement

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