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1. About the External Memory Interfaces Intel Agilex® 7 M-Series FPGA IP
2. Intel Agilex® 7 M-Series FPGA EMIF IP – Introduction
3. Intel Agilex® 7 M-Series FPGA EMIF IP – Product Architecture
4. Intel Agilex® 7 M-Series FPGA EMIF IP – End-User Signals
5. Intel Agilex® 7 M-Series FPGA EMIF IP – Simulating Memory IP
6. Intel Agilex 7 M-Series FPGA EMIF IP – DDR4 Support
7. Intel Agilex® 7 M-Series FPGA EMIF IP – DDR5 Support
8. Intel Agilex 7 M-Series FPGA EMIF IP – LPDDR5 Support
9. Intel Agilex® 7 M-Series FPGA EMIF IP – Timing Closure
10. Intel Agilex® 7 M-Series FPGA EMIF IP – Controller Optimization
11. Intel Agilex® 7 M-Series FPGA EMIF IP – Debugging
12. Document Revision History for External Memory Interfaces Intel Agilex® 7 M-Series FPGA IP User Guide
3.1.1. Intel Agilex® 7 M-Series EMIF Architecture: I/O Subsystem
3.1.2. Intel Agilex® 7 M-Series EMIF Architecture: I/O SSM
3.1.3. Intel Agilex® 7 M-Series EMIF Architecture: I/O Bank
3.1.4. Intel Agilex® 7 M-Series EMIF Architecture: I/O Lane
3.1.5. Intel Agilex® 7 M-Series EMIF Architecture: Input DQS Clock Tree
3.1.6. Intel Agilex® 7 M-Series EMIF Architecture: PHY Clock Tree
3.1.7. Intel Agilex® 7 M-Series EMIF Architecture: PLL Reference Clock Networks
3.1.8. Intel Agilex® 7 M-Series EMIF Architecture: Clock Phase Alignment
6.2.4.1. Address and Command Pin Placement for DDR4
6.2.4.2. DDR4 Data Width Mapping
6.2.4.3. General Guidelines
6.2.4.4. x4 DIMM Implementation
6.2.4.5. Specific Pin Connection Requirements
6.2.4.6. Command and Address Signals
6.2.4.7. Clock Signals
6.2.4.8. Data, Data Strobes, DM/DBI, and Optional ECC Signals
6.3.5.1. Single Rank x 8 Discrete (Component) Topology
6.3.5.2. Single Rank x 16 Discrete (Component) Topology
6.3.5.3. ADDR/CMD Reference Voltage/RESET Signal Routing Guidelines for Single Rank x 8 and Single Rank x 16 Discrete (Component) Topologies
6.3.5.4. Skew Matching Guidelines for DDR4 Discrete Configurations
6.3.5.5. Power Delivery Recommendations for DDR4 Discrete Configurations
6.3.5.6. Intel Agilex® 7 M-Series EMIF Pin Swapping Guidelines
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7.1.1. Intel Agilex 7 M-Series FPGA EMIF Memory Device Description IP (DDR5) Parameter Descriptions
Display Name | Description |
---|---|
Configuration Filepath | Filepath to Save. (.qprs extension) (Identifier: MEM_CONFIG_FILE_QPRS) |
Display Name | Description |
---|---|
Memory Format | Specifies the packaging format of the memory device (Identifier: MEM_FORMAT) |
Enable Data Mask | Specifies whether byte masking is to be enabled by the memory. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_DM_EN) |
Density of Each Memory Component | Specifies the density of each memory component in Gbits. (Identifier: DDR5_MEM_DEVICE_DENSITY_GBITS) |
Display Name | Description |
---|---|
Device DQ Width | If the device is a DIMM: Specifies the full DQ width of the DIMM. In the case of DDR5 DIMM: If the DQ width is set to 32 bits, only 1 channel of the DIMM is used; If the DQ width is set to 64 bits, both channels of the DIMM are used. If the interface is composed of discrete components: Specifies the DQ width of each discrete component. (Identifier: MEM_DEVICE_DQ_WIDTH) |
Memory Component Data Width | Specifies the data width of the memory component in bits. (Identifier: DDR5_MEM_DEVICE_COMPONENT_DQ_WIDTH) |
Display Name | Description |
---|---|
Memory Clock Frequency | Specifies the operating frequency of the memory interface in MHz. If you change the memory frequency, you must select a matching Preset from the dropdown (or create a custom one), to update all the timing parameters. (Identifier: PHY_MEMCLK_FREQ_MHZ) |
Memory Speed Bin | Specifies the memory speed bin. (Identifier: DDR5_MEM_DEVICE_SPEEDBIN) |
Memory Read Latency | Specifies the read latency of the memory interface in cycles. (Identifier: DDR5_MEM_DEVICE_CL_CYC) |
Memory Write Latency | Specifies the write latency of the memory interface in cycles. (This is a derived parameter and cannot be changed.) (Identifier: DDR5_MEM_DEVICE_CWL_CYC) |
Display Name | Description |
---|---|
tREFI1 | Specifies the maximum average refresh interval in normal refresh mode in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TREFI1_NS) |
tREFI2 | Specifies the maximum average refresh interval in fine granularity refresh mode in nanoseconds. (This is a derived parameter and cannot be changed.) (Identifier: DDR5_MEM_DEVICE_TREFI2_NS) |
tREFISB | Specifies the maximum average refresh interval in fine granularity and same bank refresh mode in nanoseconds. (This is a derived parameter and cannot be changed.) (Identifier: DDR5_MEM_DEVICE_TREFISB_NS) |
tCCD_S | Specifies the CAS_n to CAS_n command delay for different bank group in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCCD_S_CYC) |
tCCD_L | Specifies the CAS_n to CAS_n command delay for same bank group in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCCD_L_CYC) |
tCCD_L_WR | Specifies the write CAS_n to write CAS_n command delay for same bank group in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCCD_L_WR_CYC) |
tCCD_L_WR2 | Specifies the write CAS_n to write CAS_n command delay for same bank group and the second write is not RMW, in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCCD_L_WR2_CYC) |
tRRD_S | Specifies the Activate-to-Activate command delay to different bank group for 1KB page size in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRRD_S_CYC) |
tRRD_L | Specifies the Activate-to-Activate command delay to same bank group for 1KB page size in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRRD_L_CYC) |
tFAW | Specifies the four activate window for 1KB page size in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TFAW_NS) |
tRFC1 | Specifies the refresh operation delay in normal refresh mode in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRFC1_NS) |
tRFC2 | Specifies the refresh operation delay in fine granularity refresh mode in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRFC2_NS) |
tRFCSB | Specifies the refresh operation delay in fine granularity and same bank refresh mode in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRFCSB_NS) |
tRCD | Specifies the Activate-to-internal-Read-or-Write delay in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRCD_NS) |
tRP | Specifies the row precharge time in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRP_NS) |
tRAS | Specifies the Activate-to-Precharge command period in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRAS_NS) |
tRC (tRAS+tRP) | Specifies the Activate-to-Activate or Refresh command period in nanoseconds. (This is a derived parameter and cannot be changed.) (Identifier: DDR5_MEM_DEVICE_TRC_NS) |
tREFSBRD | Specifies the same bank refresh to activate delay in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TREFSBRD_NS) |
tWR | Specifies the write recovery time in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TWR_NS) |
tZQLAT | Specifies the ZQ calibration latch time in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TZQLAT_CYC) |
tZQCAL | Specifies the ZQ calibration time in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TZQCAL_NS) |
tMRR | Specifies the Mode Register Read (MRR) command period in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TMRR_CYC) |
tMRR_P | Specifies the Mode Register Read (MRR) pattern to mode register read pattern command spacing in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TMRR_P_CYC) |
tMRW | Specifies the Mode Register Write (MRW) command period in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TMRW_CYC) |
tMRD | Specifies the Mode Register Set (MRS) command delay in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TMRD_CYC) |
tDFE | Specifies the Decision Feedback Equalization (DFE) Mode Register Write update delay time in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TDFE_NS) |
tDLLK | Specifies the timing of DLLK in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TDLLK_CYC) |
tWTR_S | Specifies the delay from start of internal write transaction to internal read command for different bank group in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TWTR_S_NS) |
tWTR_L | Specifies the delay from start of internal write transaction to internal read command for same bank group in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TWTR_L_NS) |
tRTP | Specifies the internal read command to precharge command delay in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRTP_CYC) |
tPPD | Specifies the Precharge-to-Precharge delay in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TPPD_CYC) |
tPD | Specifies the minimum power down time in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TPD_CYC) |
tACTPDEN | Specifies the timing of Activate command to power down entry command in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TACTPDEN_CYC) |
tPRPDEN | Specifies the timing of Precharge All Banks (PREab), Precharge Same Bank (PREsb), or Normal Precharge (PREpb) to power down entry command in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TPRPDEN_CYC) |
tREFPDEN | Specifies the timing of Refresh All Banks (REFab) or Refresh Same Bank (REFsb) command to power down entry command in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TREFPDEN_CYC) |
tXP | Specifies the exit power down to next valid command in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TXP_CYC) |
tCPDED | Specifies the command pass disable delay in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCPDED_CYC) |
tCSL | Specifies the Self-Refresh CS_n low pulse width in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCSL_NS) |
tCKSRX | Specifies the valid clock requirement before SRX in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCKSRX_CYC) |
tCSH_SREXIT | Specifies the self-refresh exit CS_n high pulse width in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCSH_SREXIT_NS) |
tDQSCK | Specifies the DQS_t, DQS_c rising edge output timing location from rising CK_t, CK_c in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TDQSCK_CYC) |
tWPRE_EN | Specifies the write preamble enable window in cycles. The window size depends on the write preamble mode. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TWPRE_EN_CYC) |
tDQSS | Specifies the host and system voltage/temperature drift window of first rising DQS_t preamble edge relative to CAS Write Latency (CWL) CK_t-CK_c edge in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TDQSS_CYC) |