Intel® Stratix® 10 Embedded Memory User Guide

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ID 683423
Date 9/26/2022
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Document Table of Contents
Document Table of Contents x
1. Intel® Stratix® 10 Embedded Memory Overview 2. Intel® Stratix® 10 Embedded Memory Architecture and Features 3. Intel® Stratix® 10 Embedded Memory Design Considerations 4. Intel® Stratix® 10 Embedded Memory IP References 5. Intel Stratix 10 Embedded Memory Design Example 6. Intel® Stratix® 10 Embedded Memory User Guide Archives 7. Document Revision History for the Intel® Stratix® 10 Embedded Memory User Guide
1. Intel® Stratix® 10 Embedded Memory Overview x
1.1. Intel® Stratix® 10 Embedded Memory Features
2. Intel® Stratix® 10 Embedded Memory Architecture and Features x
2.1. Byte Enable in Intel® Stratix® 10 Embedded Memory Blocks 2.2. Address Clock Enable Support 2.3. Asynchronous Clear and Synchronous Clear 2.4. Memory Blocks Error Correction Code Support 2.5. Force-to-Zero 2.6. Coherent Read Memory 2.7. Freeze Logic 2.8. True Dual Port Dual Clock Emulator 2.9. 'X' Propagation Support in Simulation 2.10. Intel® Stratix® 10 Supported Embedded Memory IPs 2.11. Intel® Stratix® 10 Embedded Memory Clocking Modes 2.12. Intel® Stratix® 10 Embedded Memory Configurations 2.13. Initial Value of Read and Write Address Registers
2.1. Byte Enable in Intel® Stratix® 10 Embedded Memory Blocks x
2.1.1. Byte Enable Controls 2.1.2. Data Byte Output 2.1.3. Byte Enable Behavior
2.4. Memory Blocks Error Correction Code Support x
2.4.1. Parity Bit 2.4.2. ECC Parity Flip 2.4.3. ECC Read-During-Write Behavior 2.4.4. Error Correction Code Truth Table
2.6. Coherent Read Memory x
2.6.1. Forwarding Logic
2.11. Intel® Stratix® 10 Embedded Memory Clocking Modes x
2.11.1. Single Clock Mode 2.11.2. Read/Write Clock Mode 2.11.3. Input/Output Clock Mode 2.11.4. Asynchronous/Synchronous Clears in Clocking Modes 2.11.5. Output Read Data in Simultaneous Read/Write 2.11.6. Independent Clock Enables in Clocking Modes
2.12. Intel® Stratix® 10 Embedded Memory Configurations x
2.12.1. Mixed-Width Port Configurations
3. Intel® Stratix® 10 Embedded Memory Design Considerations x
3.1. Consider the Memory Block Selection 3.2. Consider the Concurrent Read Behavior 3.3. Customize Read-During-Write Behavior 3.4. Consider Power-Up State and Memory Initialization 3.5. Reduce Power Consumption 3.6. Avoid Providing Non-Deterministic Input 3.7. Avoid Changing Clock Signals and Other Control Signals Simultaneously 3.8. Including the Reset Release Intel® FPGA IP in Your Design 3.9. Resource and Timing Optimization Feature in MLAB Blocks 3.10. Consider the Memory Depth Setting
3.3. Customize Read-During-Write Behavior x
3.3.1. Same-Port Read-During-Write Mode 3.3.2. Mixed-Port Read-During-Write Mode
4. Intel® Stratix® 10 Embedded Memory IP References x
4.1. On Chip Memory RAM and ROM Intel® FPGA IPs 4.2. eSRAM Intel® FPGA IP 4.3. FIFO Intel® FPGA IP 4.4. FIFO2 Intel® FPGA IP 4.5. Shift Register (RAM-based) Intel® FPGA IP
4.1. On Chip Memory RAM and ROM Intel® FPGA IPs x
4.1.1. Release Information for RAM and ROM Intel® FPGA IPs 4.1.2. RAM: 1-PORT Intel® FPGA IP Parameters 4.1.3. RAM: 2-PORT Intel® FPGA IP Parameters 4.1.4. RAM: 4-PORT Intel® FPGA IP Parameters 4.1.5. ROM: 1-PORT Intel® FPGA IP Parameters 4.1.6. ROM: 2-PORT Intel® FPGA IP Parameters 4.1.7. RAM and ROM Interface Signals 4.1.8. Changing Parameter Settings Manually
4.1.8. Changing Parameter Settings Manually x
4.1.8.1. RAM and ROM Parameter Settings
4.2. eSRAM Intel® FPGA IP x
4.2.1. Release Information for eSRAM Intel® FPGA IP 4.2.2. eSRAM System Features 4.2.3. eSRAM Intel® FPGA IP Parameters 4.2.4. eSRAM Intel® FPGA IP Interface Signals 4.2.5. eSRAM Intel® FPGA IP Simulation Walk-Through 4.2.6. eSRAM Timing Diagrams
4.2.2. eSRAM System Features x
4.2.2.1. eSRAM Specifications 4.2.2.2. eSRAM Usage Model
4.3. FIFO Intel® FPGA IP x
4.3.1. Release Information for FIFO Intel® FPGA IP 4.3.2. Configuration Methods 4.3.3. Specifications 4.3.4. FIFO Functional Timing Requirements 4.3.5. SCFIFO ALMOST_EMPTY Functional Timing 4.3.6. FIFO Output Status Flag and Latency 4.3.7. FIFO Metastability Protection and Related Options 4.3.8. FIFO Synchronous Clear and Asynchronous Clear Effect 4.3.9. SCFIFO and DCFIFO Show-Ahead Mode 4.3.10. Different Input and Output Width 4.3.11. DCFIFO Timing Constraint Setting 4.3.12. Coding Example for Manual Instantiation 4.3.13. Design Example 4.3.14. Gray-Code Counter Transfer at the Clock Domain Crossing 4.3.15. Guidelines for Embedded Memory ECC Feature 4.3.16. FIFO Intel® FPGA IP Parameters 4.3.17. Reset Scheme
4.3.3. Specifications x
4.3.3.1. Verilog HDL Prototype 4.3.3.2. VHDL Component Declaration 4.3.3.3. VHDL LIBRARY-USE Declaration 4.3.3.4. FIFO Signals 4.3.3.5. FIFO Parameter Settings
4.3.8. FIFO Synchronous Clear and Asynchronous Clear Effect x
4.3.8.1. Recovery and Removal Timing Violation Warnings when Compiling a DCFIFO
4.3.11. DCFIFO Timing Constraint Setting x
4.3.11.1. Embedded Timing Constraint 4.3.11.2. User Configurable Timing Constraint
4.3.11.2. User Configurable Timing Constraint x
4.3.11.2.1. SDC Commands
4.4. FIFO2 Intel® FPGA IP x
4.4.1. Release Information for FIFO2 Intel® FPGA IP 4.4.2. Configuration Methods 4.4.3. Fmax Target Measuring Methodology 4.4.4. Performance Considerations 4.4.5. FIFO2 Intel® FPGA IP Features 4.4.6. FIFO2 Intel® FPGA IP Parameters 4.4.7. FIFO2 Intel® FPGA IP Interface Signals 4.4.8. Reset and Clock Schemes
4.4.5. FIFO2 Intel® FPGA IP Features x
4.4.5.1. FIFO2 Specifications
4.4.6. FIFO2 Intel® FPGA IP Parameters x
4.4.6.1. FIFO2 Parameter Settings
4.4.7. FIFO2 Intel® FPGA IP Interface Signals x
4.4.7.1. SCFIFO Signals 4.4.7.2. DCFIFO Signals
4.4.8. Reset and Clock Schemes x
4.4.8.1. Clock Domains 4.4.8.2. Reset
4.4.8.2. Reset x
4.4.8.2.1. FIFO2 Intel® FPGA IP Reset Guidelines
4.5. Shift Register (RAM-based) Intel® FPGA IP x
4.5.1. Release Information for Shift Register (RAM-based) Intel® FPGA IP 4.5.2. Shift Register (RAM-based) Intel® FPGA IP Features 4.5.3. Shift Register (RAM-based) Intel® FPGA IP General Description 4.5.4. Shift Register (RAM-based) Intel® FPGA IP Parameter Settings 4.5.5. Shift Register Ports and Parameters Setting
5. Intel Stratix 10 Embedded Memory Design Example x
5.1. FIFO and FIFO2 Design Example
5.1. FIFO and FIFO2 Design Example x
5.1.1. Generating the Design Example 5.1.2. Simulating the Design Example
5.1.2. Simulating the Design Example x
5.1.2.1. Simulation Results
1. Intel® Stratix® 10 Embedded Memory Overview
2. Intel® Stratix® 10 Embedded Memory Architecture and Features
3. Intel® Stratix® 10 Embedded Memory Design Considerations
4. Intel® Stratix® 10 Embedded Memory IP References
5. Intel Stratix 10 Embedded Memory Design Example
6. Intel® Stratix® 10 Embedded Memory User Guide Archives
7. Document Revision History for the Intel® Stratix® 10 Embedded Memory User Guide

4.2.3. eSRAM Intel® FPGA IP Parameters

The parameters allow you to select the channels that you want to implement.
Table 33.  eSRAM Intel® FPGA IP Parameter Editor: General Tab
Parameter Legal Values Description
Interface
Interface
  • Enable Channel 0
  • Enable Channel 1
  • Enable Channel 2
  • Enable Channel 3
  • Enable Channel 4
  • Enable Channel 5
  • Enable Channel 6
  • Enable Channel 7
 On/Off Specifies the channel to be enabled for eSRAM. There are 8 channels per eSRAM.
  • Enable Channel 0—This option enables Channel 0 for eSRAM.
  • Enable Channel 1—This option enables Channel 1 for eSRAM.
  • Enable Channel 2—This option enables Channel 2 for eSRAM.
  • Enable Channel 3—This option enables Channel 3 for eSRAM.
  • Enable Channel 4—This option enables Channel 4 for eSRAM.
  • Enable Channel 5—This option enables Channel 5 for eSRAM.
  • Enable Channel 6—This option enables Channel 6 for eSRAM.
  • Enable Channel 7—This option enables Channel 7 for eSRAM.
PLL
PLL Reference Clock Frequency — Specifies the PLL reference clock frequency to the eSRAM PLL. The valid ranges is 10 - 325 MHz for any device's speed grade.
PLL Desired Clock Frequency — Specifies the PLL desired output clock frequency which is the frequency to the eSRAM. The valid ranges is 200 - 750 MHz depending on the speed grade of your device.
Table 34.  eSRAM Intel® FPGA IP Parameter Editor: Channel Tab
Parameter Legal Values Description
Channel Width and Depth
How wide should the data bus be? — Specifies the width of the data bus.
  • Normal mode: 1 to 72 bits
  • ECC enable only: 1 to 64 bits
  • Both ECC and ECC Encoder and Decoder Bypass enabled: 72 bits only
How many words of memory? —

Specifies how many memory banks to use out of the possible 42 banks available per eSRAM channel. Banks are specified in increments of 2048 words, where each 2048 words equals one bank. The number of banks specified determines the address width available to the user. Banks that are not used are powered off and cannot be activated after parameterization.

Note: If you attempt to address a bank that has not been enabled, any resulting data will be random and without value.
Channel Features
Enable ECC Encoder and Decoder On/Off Enables the ECC encoder and decoder, which assists in maintaining the integrity of data written to and read from the eSRAM.
Note: When you enable the ECC encoder and decoder, the maximum data bus width decreases from 72 bits to 64 bits. The 8 bit difference is used in the parity calculations required by the ECC encoder and decoder.
Enable Dynamic ECC Encoder and Decoder Bypass On/Off Enables users to dynamically bypass the ECC encoder and/or decoder, by asserting eccencbypass or eccdecbypass. This feature is useful for debugging purposes.
Enable Write Forwarding On/Off Enables write forwarding, which ensures data coherency when writing to and reading from the same address in the eSRAM. Write forwarding takes the data present on the write port and forwards it to the read port as read data.

Write-forwarded read data requires the same duration of time as a regular read. Read logic does not use data stored in the targeted address, but the data is still written to the address.

Enable Low Power Mode On/Off Enables Low Power mode, which reduces power consumption by placing targeted eSRAM memory banks into a state of light sleep. When a bank is targeted for access, it is awakened one cycle prior to the access. The bank returns to a state of light sleep after the access is completed.

Low Power mode does not alter the content of a memory bank. One drawback of Low Power mode is that it increases read latency from 10+2 to 11+2.

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