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1. About the External Memory Interfaces Intel® Agilex™ FPGA IP
2. Intel® Agilex™ FPGA EMIF IP – Introduction
3. Intel® Agilex™ FPGA EMIF IP – Product Architecture
4. Intel® Agilex™ FPGA EMIF IP – End-User Signals
5. Intel® Agilex™ FPGA EMIF IP – Simulating Memory IP
6. Intel® Agilex™ FPGA EMIF IP – DDR4 Support
7. Intel® Agilex™ FPGA EMIF IP – QDR-IV Support
8. Intel® Agilex™ FPGA EMIF IP – Timing Closure
9. Intel® Agilex™ FPGA EMIF IP – I/O Timing Closure
10. Intel® Agilex™ FPGA EMIF IP – Controller Optimization
11. Intel® Agilex™ FPGA EMIF IP – Debugging
12. External Memory Interfaces Intel® Agilex™ FPGA IP User Guide Archives
13. Document Revision History for External Memory Interfaces Intel® Agilex™ FPGA IP User Guide
3.1. Intel® Agilex™ EMIF Architecture: Introduction
3.2. Intel® Agilex™ EMIF Sequencer
3.3. Intel® Agilex™ EMIF Calibration
3.4. Intel® Agilex™ EMIF Controller
3.5. User-requested Reset in Intel® Agilex™ EMIF IP
3.6. Intel® Agilex™ EMIF for Hard Processor Subsystem
3.7. Using a Custom Controller with the Hard PHY
3.1.1. Intel® Agilex™ EMIF Architecture: I/O Subsystem
3.1.2. Intel® Agilex™ EMIF Architecture: I/O SSM
3.1.3. Intel® Agilex™ EMIF Architecture: I/O Bank
3.1.4. Intel® Agilex™ EMIF Architecture: I/O Lane
3.1.5. Intel® Agilex™ EMIF Architecture: Input DQS Clock Tree
3.1.6. Intel® Agilex™ EMIF Architecture: PHY Clock Tree
3.1.7. Intel® Agilex™ EMIF Architecture: PLL Reference Clock Networks
3.1.8. Intel® Agilex™ EMIF Architecture: Clock Phase Alignment
3.3.4.3.1. Debugging Calibration Failure Using Information from the Calibration report
3.3.4.3.2. Debugging Address and Command Leveling Calibration Failure
3.3.4.3.3. Debugging Address and Command Deskew Failure
3.3.4.3.4. Debugging DQS Enable Failure
3.3.4.3.5. Debugging Read Deskew Calibration Failure
3.3.4.3.6. Debugging VREFIN Calibration Failure
3.3.4.3.7. Debugging LFIFO Calibration Failure
3.3.4.3.8. Debugging Write Leveling Failure
3.3.4.3.9. Debugging Write Deskew Calibration Failure
3.3.4.3.10. Debugging VREFOUT Calibration Failure
4.1.1.1. local_reset_req for DDR4
4.1.1.2. local_reset_status for DDR4
4.1.1.3. pll_ref_clk for DDR4
4.1.1.4. pll_locked for DDR4
4.1.1.5. ac_parity_err for DDR4
4.1.1.6. oct for DDR4
4.1.1.7. mem for DDR4
4.1.1.8. status for DDR4
4.1.1.9. afi_reset_n for DDR4
4.1.1.10. afi_clk for DDR4
4.1.1.11. afi_half_clk for DDR4
4.1.1.12. afi for DDR4
4.1.1.13. emif_usr_reset_n for DDR4
4.1.1.14. emif_usr_clk for DDR4
4.1.1.15. ctrl_amm for DDR4
4.1.1.16. ctrl_amm_aux for DDR4
4.1.1.17. ctrl_auto_precharge for DDR4
4.1.1.18. ctrl_user_priority for DDR4
4.1.1.19. ctrl_ecc_user_interrupt for DDR4
4.1.1.20. ctrl_ecc_readdataerror for DDR4
4.1.1.21. ctrl_ecc_status for DDR4
4.1.1.22. ctrl_mmr_slave for DDR4
4.1.1.23. hps_emif for DDR4
4.1.1.24. emif_calbus for DDR4
4.1.1.25. emif_calbus_clk for DDR4
4.1.2.1. local_reset_req for QDR-IV
4.1.2.2. local_reset_status for QDR-IV
4.1.2.3. pll_ref_clk for QDR-IV
4.1.2.4. pll_locked for QDR-IV
4.1.2.5. oct for QDR-IV
4.1.2.6. mem for QDR-IV
4.1.2.7. status for QDR-IV
4.1.2.8. afi_reset_n for QDR-IV
4.1.2.9. afi_clk for QDR-IV
4.1.2.10. afi_half_clk for QDR-IV
4.1.2.11. afi for QDR-IV
4.1.2.12. emif_usr_reset_n for QDR-IV
4.1.2.13. emif_usr_clk for QDR-IV
4.1.2.14. ctrl_amm for QDR-IV
4.1.2.15. emif_calbus for QDR-IV
4.1.2.16. emif_calbus_clk for QDR-IV
4.4.1. ctrlcfg0
4.4.2. ctrlcfg1
4.4.3. dramtiming0
4.4.4. sbcfg1
4.4.5. caltiming0
4.4.6. caltiming1
4.4.7. caltiming2
4.4.8. caltiming3
4.4.9. caltiming4
4.4.10. caltiming9
4.4.11. dramaddrw
4.4.12. sideband0
4.4.13. sideband1
4.4.14. sideband4
4.4.15. sideband6
4.4.16. sideband7
4.4.17. sideband9
4.4.18. sideband11
4.4.19. sideband12
4.4.20. sideband13
4.4.21. sideband14
4.4.22. dramsts
4.4.23. niosreserve0
4.4.24. niosreserve1
4.4.25. sideband16
4.4.26. ecc3: ECC Error and Interrupt Configuration
4.4.27. ecc4: Status and Error Information
4.4.28. ecc5: Address of Most Recent SBE/DBE
4.4.29. ecc6: Address of Most Recent Correction Command Dropped
4.4.30. ecc7: Extension for Address of Most Recent SBE/DBE
4.4.31. ecc8: Extension for Address of Most Recent Correction Command Dropped
6.1.1. Intel Agilex EMIF IP DDR4 Parameters: General
6.1.2. Intel Agilex EMIF IP DDR4 Parameters: Memory
6.1.3. Intel Agilex EMIF IP DDR4 Parameters: Mem I/O
6.1.4. Intel Agilex EMIF IP DDR4 Parameters: FPGA I/O
6.1.5. Intel Agilex EMIF IP DDR4 Parameters: Mem Timing
6.1.6. Intel Agilex EMIF IP DDR4 Parameters: Controller
6.1.7. Intel Agilex EMIF IP DDR4 Parameters: Diagnostics
6.1.8. Intel Agilex EMIF IP DDR4 Parameters: Example Designs
6.5.1. Terminations for DDR4 with Intel® Agilex™ Devices
6.5.2. Clamshell Topology
6.5.3. General Layout Routing Guidelines
6.5.4. Reference Stackup
6.5.5. Intel® Agilex™ EMIF-Specific Routing Guidelines for Various DDR4 Topologies
6.5.6. DDR4 Routing Guidelines: Discrete (Component) Topologies
6.5.7. Intel® Agilex™ EMIF Pin Swapping Guidelines
6.5.5.1. One DIMM per Channel (1DPC) for UDIMM, RDIMM, LRDIMM, and SODIMM DDR4 Topologies
6.5.5.2. Two DIMMs per Channel (2DPC) for UDIMM, RDIMM, and LRDIMM DDR4 Topologies
6.5.5.3. Two DIMMs per Channel (2DPC) for SODIMM Topology
6.5.5.4. Skew Matching Guidelines for DIMM Configurations
6.5.5.5. Power Delivery Recommendations for the Memory / DIMM Side
6.5.6.1. Single Rank x 8 Discrete (Component) Topology
6.5.6.2. Single Rank x 16 Discrete (Component) Topology
6.5.6.3. ADDR/CMD Reference Voltage/RESET Signal Routing Guidelines for Single Rank x 8 and R Rank x 16 Discrete (Component) Topologies
6.5.6.4. Skew Matching Guidelines for DDR4 Discrete Configurations
6.5.6.5. Power Delivery Recommendations for DDR4 Discrete Configurations
7.1.1. Intel Agilex EMIF IP QDR-IV Parameters: General
7.1.2. Intel Agilex EMIF IP QDR-IV Parameters: Memory
7.1.3. Intel Agilex EMIF IP QDR-IV Parameters: FPGA I/O
7.1.4. Intel Agilex EMIF IP QDR-IV Parameters: Mem Timing
7.1.5. Intel Agilex EMIF IP QDR-IV Parameters: Controller
7.1.6. Intel Agilex EMIF IP QDR-IV Parameters: Diagnostics
7.1.7. Intel Agilex EMIF IP QDR-IV Parameters: Example Designs
7.3.3.1. Intel® Agilex™ FPGA EMIF IP Banks
7.3.3.2. General Guidelines
7.3.3.3. QDR IV SRAM Commands and Addresses, AP, and AINV Signals
7.3.3.4. QDR IV SRAM Clock Signals
7.3.3.5. QDR IV SRAM Data, DINV, and QVLD Signals
7.3.3.6. Specific Pin Connection Requirements
7.3.3.7. Resource Sharing Guidelines (Multiple Interfaces)
9.1. I/O Timing Closure Overview
9.2. Collateral Generated with Your EMIF IP
9.3. SPICE Decks
9.4. File Organization
9.5. Top-level Parameterization File
9.6. IP-Supplied Parameters that You Might Need to Override
9.7. Understanding the *_ip_parameters.dat File and Making a Mask Polygon
9.8. Multi-Rank Topology
9.9. Pin Parasitics
9.10. Mask Evaluation
10.4.1. Auto-Precharge Commands
10.4.2. Additive Latency
10.4.3. Bank Interleaving
10.4.4. Additive Latency and Bank Interleaving
10.4.5. User-Controlled Refresh
10.4.6. Frequency of Operation
10.4.7. Series of Reads or Writes
10.4.8. Data Reordering
10.4.9. Starvation Control
10.4.10. Command Reordering
10.4.11. Bandwidth
10.4.12. Enable Command Priority Control
10.4.13. Controller Pre-pay and Post-pay Refresh (DDR4 Only)
11.1. Interface Configuration Performance Issues
11.2. Functional Issue Evaluation
11.3. Timing Issue Characteristics
11.4. Verifying Memory IP Using the Signal Tap Logic Analyzer
11.5. Hardware Debugging Guidelines
11.6. Categorizing Hardware Issues
11.7. Debugging with the External Memory Interface Debug Toolkit
11.8. Using the Default Traffic Generator
11.9. Using the Configurable Traffic Generator (TG2)
11.10. EMIF On-Chip Debug Port
11.11. Efficiency Monitor
11.5.1. Create a Simplified Design that Demonstrates the Same Issue
11.5.2. Measure Power Distribution Network
11.5.3. Measure Signal Integrity and Setup and Hold Margin
11.5.4. Vary Voltage
11.5.5. Operate at a Lower Speed
11.5.6. Determine Whether the Issue Exists in Previous Versions of Software
11.5.7. Determine Whether the Issue Exists in the Current Version of Software
11.5.8. Try A Different PCB
11.5.9. Try Other Configurations
11.5.10. Debugging Checklist
11.7.4.3.1. Debugging Calibration Failure Using Information from the Calibration report
11.7.4.3.2. Debugging Address and Command Leveling Calibration Failure
11.7.4.3.3. Debugging Address and Command Deskew Failure
11.7.4.3.4. Debugging DQS Enable Failure
11.7.4.3.5. Debugging Read Deskew Calibration Failure
11.7.4.3.6. Debugging VREFIN Calibration Failure
11.7.4.3.7. Debugging LFIFO Calibration Failure
11.7.4.3.8. Debugging Write Leveling Failure
11.7.4.3.9. Debugging Write Deskew Calibration Failure
11.7.4.3.10. Debugging VREFOUT Calibration Failure
11.9.1. Enabling the Traffic Generator in a Design Example
11.9.2. Traffic Generator Block Description
11.9.3. Default Traffic Pattern
11.9.4. Configuration and Status Registers
11.9.5. User Pattern
11.9.6. Traffic Generator Status
11.9.7. Starting Traffic with the Traffic Generator
11.9.8. Traffic Generator Configuration User Interface
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6.1.2. Intel Agilex EMIF IP DDR4 Parameters: Memory
Display Name | Description |
---|---|
Memory format | Specifies the format of the external memory device. The following formats are supported: Component - a Discrete memory device; UDIMM - Unregistered/Unbuffered DIMM where address/control, clock, and data are unbuffered; RDIMM - Registered DIMM where address/control and clock are buffered; LRDIMM - Load Reduction DIMM where address/control, clock, and data are buffered. LRDIMM reduces the load to increase memory speed and supports higher densities than RDIMM; SODIMM - Small Outline DIMM is similar to UDIMM but smaller in size and is typically used for systems with limited space. Some memory protocols may not be available in all formats. (Identifier: MEM_DDR4_FORMAT_ENUM)
Note:
|
DQ width | Specifies the total number of data pins in the interface. (Identifier: MEM_DDR4_DQ_WIDTH) |
DQ pins per DQS group | Specifies the total number of DQ pins per DQS group. (Identifier: MEM_DDR4_DQ_PER_DQS) |
Number of DQS groups | Specifies the number of DQS groups in the interface. This value is automatically calculated as the DQ width divided by the number of DQ pins per DQ group. |
Number of clocks | Specifies the number of CK/CK# clock pairs exposed by the memory interface. Usually more than 1 pair is required for RDIMM/LRDIMM formats. The value of this parameter depends on the memory device selected; refer to the data sheet for your memory device. (Identifier: MEM_DDR4_CK_WIDTH) |
Number of DIMMs | Total number of DIMMs. (Identifier: MEM_DDR4_NUM_OF_DIMMS) |
Number of physical ranks per DIMM | Number of ranks per DIMM. For LRDIMM, this represents the number of physical ranks on the DIMM behind the memory buffer (Identifier: MEM_DDR4_RANKS_PER_DIMM) |
Number of chip selects per DIMM | Specifies the number of chip selects per DIMM. |
Number of Chip Select | Specifies the number of chip select. |
Chip ID width | Specifies the number of chip ID pins. Only applicable to registered and load-reduced DIMMs that use 3DS/TSV memory devices. (Identifier: MEM_DDR4_CHIP_ID_WIDTH) |
Row address width | Specifies the number of row address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of address pins needed for access to all available rows. (Identifier: MEM_DDR4_ROW_ADDR_WIDTH) |
Column address width | Specifies the number of column address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of address pins needed for access to all available columns. (Identifier: MEM_DDR4_COL_ADDR_WIDTH) |
Bank address width | Specifies the number of bank address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of bank address pins needed for access to all available banks. (Identifier: MEM_DDR4_BANK_ADDR_WIDTH) |
Bank group width | Specifies the number of bank group pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of bank group pins needed for access to all available bank groups. (Identifier: MEM_DDR4_BANK_GROUP_WIDTH) |
Data mask | Indicates whether the interface uses data mask (DM) pins. This feature allows specified portions of the data bus to be written to memory (not available in x4 mode). One DM pin exists per DQS group. (Identifier: MEM_DDR4_DM_EN) |
Write DBI | Indicates whether the interface uses write data bus inversion (DBI). This feature provides better signal integrity and write margin. This feature is unavailable if Data Mask is enabled or in x4 mode. (Identifier: MEM_DDR4_WRITE_DBI) |
Read DBI | Specifies whether the interface uses read data bus inversion (DBI). Enable this feature for better signal integrity and read margin. This feature is not available in x4 configurations. (Identifier: MEM_DDR4_READ_DBI) |
Enable address mirroring for odd chip-selects | Enabling address mirroring for multi-CS discrete components. Typically used when components are arranged in a clamshell layout. (Identifier: MEM_DDR4_DISCRETE_MIRROR_ADDRESSING_EN) |
Enable address mirroring for odd ranks | Enabling address mirroring for dual-rank or quad-rank DIMM. (Identifier: MEM_DDR4_MIRROR_ADDRESSING_EN) |
ALERT# pin placement | Specifies placement for the mem_alert_n signal. If you select "Automatically select a location", the IP automatically selects a pin for the mem_alert_n signal. If you select this option, no additional location constraints can be applied to the mem_alert_n pin, or a fitter error will result during compilation. For devices in the Agilex Family: You have the option of manually selecting either Address/Command Lane 2, Pin 8 or Address/Command Lane 3, Pin 8 only. For interfaces containing multiple memory devices, it is recommended to connect the ALERT# pins together to the ALERT# pin on the FPGA. (Identifier: MEM_DDR4_ALERT_N_PLACEMENT_ENUM) |
Display Name | Description |
---|---|
Memory CAS latency setting | Specifies the number of clock cycles between the read command and the availability of the first bit of output data at the memory device. Overall read latency equals the additive latency (AL) + the CAS latency (CL). Overall read latency depends on the memory device selected; refer to the datasheet for your device. (Identifier: MEM_DDR4_TCL) |
Memory write CAS latency setting | Specifies the number of clock cycles from the release of internal write to the latching of the first data in at the memory device. This value depends on the memory device selected; refer to the datasheet for your device. (Identifier: MEM_DDR4_WTCL) |
Memory additive CAS latency setting | Determines the posted CAS additive latency of the memory device. Enable this feature to improve command and bus efficiency, and increase system bandwidth. (Identifier: MEM_DDR4_ATCL_ENUM) |
Addr/CMD parity latency | Additional latency incurred by enabling address/command parity check after calibration. Select a value to enable address/command parity with the latency associated with the selected value. Select Disable to disable address/command parity. Address/command parity is enabled automatically during calibration regardless of the value of this setting. |
Fine granularity refresh | Increased frequency of refresh in exchange for shorter refresh. Shorter tRFC and increased cycle time can produce higher bandwidth. (Identifier: MEM_DDR4_FINE_Granularity_Refresh) |