Quad-Serial Configuration (EPCQ) Devices Datasheet

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ID 683078
Date 1/23/2020
Public
Document Table of Contents
Document Table of Contents x
1. Quad-Serial Configuration (EPCQ) Devices Datasheet
1. Quad-Serial Configuration (EPCQ) Devices Datasheet x
1.1. Supported Devices 1.2. Features 1.3. Operating Conditions 1.4. Memory Array Organization 1.5. Memory Operations 1.6. Registers 1.7. Summary of Operation Codes 1.8. Power Mode 1.9. Timing Information 1.10. Programming and Configuration File Support 1.11. Pin Information 1.12. Device Package and Ordering Code 1.13. Document Revision History for Quad-Serial Configuration (EPCQ) Devices Datasheet
1.3. Operating Conditions x
1.3.1. Absolute Maximum Ratings 1.3.2. Recommended Operating Conditions 1.3.3. DC Operating Conditions 1.3.4. ICC Supply Current 1.3.5. Capacitance
1.4. Memory Array Organization x
1.4.1. Address Range for EPCQ16 1.4.2. Address Range for EPCQ32 1.4.3. Address Range for EPCQ64 1.4.4. Address Range for EPCQ128 1.4.5. Address Range for EPCQ256 1.4.6. Address Range for EPCQ512/A
1.5. Memory Operations x
1.5.1. Timing Requirements 1.5.2. Addressing Mode
1.6. Registers x
1.6.1. Status Register 1.6.2. Flag Status Register 1.6.3. Non-Volatile Configuration Register
1.6.1. Status Register x
1.6.1.1. Read Status Register Operation (05h) 1.6.1.2. Write Status Register Operation (01h)
1.6.1.1. Read Status Register Operation (05h) x
1.6.1.1.1. Block Protection Bits in EPCQ16 when TB Bit is Set to 0 1.6.1.1.2. Block Protection Bits in EPCQ16 when TB Bit is Set to 1 1.6.1.1.3. Block Protection Bits in EPCQ32 when TB Bit is Set to 0 1.6.1.1.4. Block Protection Bits in EPCQ32 when TB Bit is Set to 1 1.6.1.1.5. Block Protection Bits in EPCQ64 when TB Bit is Set to 0 1.6.1.1.6. Block Protection Bits in EPCQ64 when TB Bit is Set to 1 1.6.1.1.7. Block Protection Bits in EPCQ128 when TB Bit is Set to 0 1.6.1.1.8. Block Protection Bits in EPCQ128 when TB Bit is Set to 1 1.6.1.1.9. Block Protection Bits in EPCQ256 when TB Bit is Set to 0 1.6.1.1.10. Block Protection Bits in EPCQ256 when TB Bit is Set to 1 1.6.1.1.11. Block Protection Bits in EPCQ512/A when TB is Set to 0 1.6.1.1.12. Block Protection Bits in EPCQ512/A when TB is Set to 1
1.6.2. Flag Status Register x
1.6.2.1. Read Flag Status Register Operation(70h)
1.6.3. Non-Volatile Configuration Register x
1.6.3.1. Read Non-Volatile Configuration Register Operation (B5h) 1.6.3.2. Write Non-Volatile Configuration Register Operation (B1h)
1.7. Summary of Operation Codes x
1.7.1. 4BYTEADDREN and 4BYTEADDREX Operations (B7h and E9h) 1.7.2. Write Enable Operation (06h) 1.7.3. Write Disable Operation (04h) 1.7.4. Read Bytes Operation (03h) 1.7.5. Fast Read Operation (0Bh) 1.7.6. Extended Dual Input Fast Read Operation (BBh) 1.7.7. Extended Quad Input Fast Read Operation (EBh) 1.7.8. Read Device Identification Operation (9Fh) 1.7.9. Write Bytes Operation (02h) 1.7.10. Extended Dual Input Fast Write Bytes Operation (D2h) 1.7.11. Extended Quad Input Fast Write Bytes Operation (12h or 38h) 1.7.12. Erase Bulk Operation (C7h) 1.7.13. Erase Sector Operation (D8h) 1.7.14. Erase Subsector Operation
1.9. Timing Information x
1.9.1. Write Operation Timing 1.9.2. Read Operation Timing
1.11. Pin Information x
1.11.1. Pin-Out Diagram for EPCQ16 and EPCQ32 Devices 1.11.2. Pin-Out Diagram for EPCQ64, EPCQ128, EPCQ256, and EPCQ512/A Devices 1.11.3. EPCQ Device Pin Description
1.12. Device Package and Ordering Code x
1.12.1. Package 1.12.2. Ordering Code
1. Quad-Serial Configuration (EPCQ) Devices Datasheet

1.7.12. Erase Bulk Operation (C7h)

This operation sets all the memory bits to 1or 0xFF. Similar to the write bytes operation, you must execute the write enable operation before the erase bulk operation.

You can implement the erase bulk operation by driving the nCS signal low and then shifting in the erase bulk operation code on the DATA0 pin. The nCS signal must be driven high after the eighth bit of the erase bulk operation code has been latched in.

Figure 19. Erase Bulk Operation Timing Diagram


The device initiates a self-timed erase bulk cycle immediately after the nCS signal is driven high. For details about the self-timed erase bulk cycle time, refer to tEB in the related information below.

You must account for this delay before accessing the memory contents. Alternatively, you can check the write in progress bit in the status register by executing the read status operation while the self-timed erase cycle is in progress. The write in progress bit is set to 1 during the self-timed erase cycle and 0 when it is complete. The write enable latch bit in the status register is reset to 0 before the erase cycle is complete.

Related Information
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