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1. Functional Description—UniPHY
2. Functional Description— Intel® MAX® 10 EMIF IP
3. Functional Description—Hard Memory Interface
4. Functional Description—HPS Memory Controller
5. Functional Description—HPC II Controller
6. Functional Description—QDR II Controller
7. Functional Description—RLDRAM II Controller
8. Functional Description—RLDRAM 3 PHY-Only IP
9. Functional Description—Example Designs
10. Introduction to UniPHY IP
11. Latency for UniPHY IP
12. Timing Diagrams for UniPHY IP
13. External Memory Interface Debug Toolkit
14. Upgrading to UniPHY-based Controllers from ALTMEMPHY-based Controllers
1.1. I/O Pads
1.2. Reset and Clock Generation
1.3. Dedicated Clock Networks
1.4. Address and Command Datapath
1.5. Write Datapath
1.6. Read Datapath
1.7. Sequencer
1.8. Shadow Registers
1.9. UniPHY Interfaces
1.10. UniPHY Signals
1.11. PHY-to-Controller Interfaces
1.12. Using a Custom Controller
1.13. AFI 3.0 Specification
1.14. Register Maps
1.15. Ping Pong PHY
1.16. Efficiency Monitor and Protocol Checker
1.17. UniPHY Calibration Stages
1.18. Document Revision History
1.7.1.1. Nios® II-based Sequencer Function
1.7.1.2. Nios® II-based Sequencer Architecture
1.7.1.3. Nios® II-based Sequencer SCC Manager
1.7.1.4. Nios® II-based Sequencer RW Manager
1.7.1.5. Nios® II-based Sequencer PHY Manager
1.7.1.6. Nios® II-based Sequencer Data Manager
1.7.1.7. Nios® II-based Sequencer Tracking Manager
1.7.1.8. Nios® II-based Sequencer Processor
1.7.1.9. Nios® II-based Sequencer Calibration and Diagnostics
1.17.1. Calibration Overview
1.17.2. Calibration Stages
1.17.3. Memory Initialization
1.17.4. Stage 1: Read Calibration Part One—DQS Enable Calibration and DQ/DQS Centering
1.17.5. Stage 2: Write Calibration Part One
1.17.6. Stage 3: Write Calibration Part Two—DQ/DQS Centering
1.17.7. Stage 4: Read Calibration Part Two—Read Latency Minimization
1.17.8. Calibration Signals
1.17.9. Calibration Time
4.1. Features of the SDRAM Controller Subsystem
4.2. SDRAM Controller Subsystem Block Diagram
4.3. SDRAM Controller Memory Options
4.4. SDRAM Controller Subsystem Interfaces
4.5. Memory Controller Architecture
4.6. Functional Description of the SDRAM Controller Subsystem
4.7. SDRAM Power Management
4.8. DDR PHY
4.9. Clocks
4.10. Resets
4.11. Port Mappings
4.12. Initialization
4.13. SDRAM Controller Subsystem Programming Model
4.14. Debugging HPS SDRAM in the Preloader
4.15. SDRAM Controller Address Map and Register Definitions
4.16. Document Revision History
10.7.1. DDR2, DDR3, and LPDDR2 Resource Utilization in Arria V Devices
10.7.2. DDR2 and DDR3 Resource Utilization in Arria II GZ Devices
10.7.3. DDR2 and DDR3 Resource Utilization in Stratix III Devices
10.7.4. DDR2 and DDR3 Resource Utilization in Stratix IV Devices
10.7.5. DDR2 and DDR3 Resource Utilization in Arria V GZ and Stratix V Devices
10.7.6. QDR II and QDR II+ Resource Utilization in Arria V Devices
10.7.7. QDR II and QDR II+ Resource Utilization in Arria II GX Devices
10.7.8. QDR II and QDR II+ Resource Utilization in Arria II GZ, Arria V GZ, Stratix III, Stratix IV, and Stratix V Devices
10.7.9. RLDRAM II Resource Utilization in Arria® V Devices
10.7.10. RLDRAM II Resource Utilization in Arria® II GZ, Arria® V GZ, Stratix® III, Stratix® IV, and Stratix® V Devices
13.1. User Interface
13.2. Setup and Use
13.3. Operational Considerations
13.4. Troubleshooting
13.5. Debug Report for Arria V and Cyclone V SoC Devices
13.6. On-Chip Debug Port for UniPHY-based EMIF IP
13.7. Example Tcl Script for Running the Legacy EMIF Debug Toolkit
13.8. Document Revision History
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1.7.1.4. Nios® II-based Sequencer RW Manager
The read-write (RW) manager encapsulates the protocol to read and write to the memory device through the Altera PHY Interface (AFI). It provides a buffer that stores the data to be sent to and read from memory, and provides the following commands:
- Write configuration—configures the memory for use. Sets up burst lengths, read and write latencies, and other device specific parameters.
- Refresh—initiates a refresh operation at the DRAM. The command does not exist on SRAM devices. The sequencer also provides a register that determines whether the RW manager automatically generates refresh signals.
- Enable or disable multi-purpose register (MPR)—for memory devices with a special register that contains calibration specific patterns that you can read, this command enables or disables access to the register.
- Activate row—for memory devices that have both rows and columns, this command activates a specific row. Subsequent reads and writes operate on this specific row.
- Precharge—closes a row before you can access a new row.
- Write or read burst—writes or reads a burst length of data.
- Write guaranteed—writes with a special mode where the memory holds address and data lines constant. Intel guarantees this type of write to work in the presence of skew, but constrains to write the same data across the entire burst length.
- Write and read back-to-back—performs back-to-back writes or reads to adjacent banks. Most memory devices have strict timing constraints on subsequent accesses to the same bank, thus back-to-back writes and reads have to reference different banks.
- Protocol-specific initialization—a protocol-specific command required by the initialization sequence.