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1. Functional Description—UniPHY
2. Functional Description— Intel® MAX® 10 EMIF IP
3. Functional Description—Hard Memory Interface
4. Functional Description—HPS Memory Controller
5. Functional Description—HPC II Controller
6. Functional Description—QDR II Controller
7. Functional Description—RLDRAM II Controller
8. Functional Description—RLDRAM 3 PHY-Only IP
9. Functional Description—Example Designs
10. Introduction to UniPHY IP
11. Latency for UniPHY IP
12. Timing Diagrams for UniPHY IP
13. External Memory Interface Debug Toolkit
14. Upgrading to UniPHY-based Controllers from ALTMEMPHY-based Controllers
1.1. I/O Pads
1.2. Reset and Clock Generation
1.3. Dedicated Clock Networks
1.4. Address and Command Datapath
1.5. Write Datapath
1.6. Read Datapath
1.7. Sequencer
1.8. Shadow Registers
1.9. UniPHY Interfaces
1.10. UniPHY Signals
1.11. PHY-to-Controller Interfaces
1.12. Using a Custom Controller
1.13. AFI 3.0 Specification
1.14. Register Maps
1.15. Ping Pong PHY
1.16. Efficiency Monitor and Protocol Checker
1.17. UniPHY Calibration Stages
1.18. Document Revision History
1.7.1.1. Nios® II-based Sequencer Function
1.7.1.2. Nios® II-based Sequencer Architecture
1.7.1.3. Nios® II-based Sequencer SCC Manager
1.7.1.4. Nios® II-based Sequencer RW Manager
1.7.1.5. Nios® II-based Sequencer PHY Manager
1.7.1.6. Nios® II-based Sequencer Data Manager
1.7.1.7. Nios® II-based Sequencer Tracking Manager
1.7.1.8. Nios® II-based Sequencer Processor
1.7.1.9. Nios® II-based Sequencer Calibration and Diagnostics
1.17.1. Calibration Overview
1.17.2. Calibration Stages
1.17.3. Memory Initialization
1.17.4. Stage 1: Read Calibration Part One—DQS Enable Calibration and DQ/DQS Centering
1.17.5. Stage 2: Write Calibration Part One
1.17.6. Stage 3: Write Calibration Part Two—DQ/DQS Centering
1.17.7. Stage 4: Read Calibration Part Two—Read Latency Minimization
1.17.8. Calibration Signals
1.17.9. Calibration Time
4.1. Features of the SDRAM Controller Subsystem
4.2. SDRAM Controller Subsystem Block Diagram
4.3. SDRAM Controller Memory Options
4.4. SDRAM Controller Subsystem Interfaces
4.5. Memory Controller Architecture
4.6. Functional Description of the SDRAM Controller Subsystem
4.7. SDRAM Power Management
4.8. DDR PHY
4.9. Clocks
4.10. Resets
4.11. Port Mappings
4.12. Initialization
4.13. SDRAM Controller Subsystem Programming Model
4.14. Debugging HPS SDRAM in the Preloader
4.15. SDRAM Controller Address Map and Register Definitions
4.16. Document Revision History
10.7.1. DDR2, DDR3, and LPDDR2 Resource Utilization in Arria V Devices
10.7.2. DDR2 and DDR3 Resource Utilization in Arria II GZ Devices
10.7.3. DDR2 and DDR3 Resource Utilization in Stratix III Devices
10.7.4. DDR2 and DDR3 Resource Utilization in Stratix IV Devices
10.7.5. DDR2 and DDR3 Resource Utilization in Arria V GZ and Stratix V Devices
10.7.6. QDR II and QDR II+ Resource Utilization in Arria V Devices
10.7.7. QDR II and QDR II+ Resource Utilization in Arria II GX Devices
10.7.8. QDR II and QDR II+ Resource Utilization in Arria II GZ, Arria V GZ, Stratix III, Stratix IV, and Stratix V Devices
10.7.9. RLDRAM II Resource Utilization in Arria® V Devices
10.7.10. RLDRAM II Resource Utilization in Arria® II GZ, Arria® V GZ, Stratix® III, Stratix® IV, and Stratix® V Devices
13.1. User Interface
13.2. Setup and Use
13.3. Operational Considerations
13.4. Troubleshooting
13.5. Debug Report for Arria V and Cyclone V SoC Devices
13.6. On-Chip Debug Port for UniPHY-based EMIF IP
13.7. Example Tcl Script for Running the Legacy EMIF Debug Toolkit
13.8. Document Revision History
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4.14.3.1. Analysis of Debug Report
The following analysis helps you interpret the debug report.
- The Read Deskew and Write Deskew results shown in the debug report are before calibration. (Before calibration results are actually from the window seen during calibration, and are most useful for debugging.)
- For each DQ group, the Write Deskew, Read Deskew, DM Deskew, and Read after Write results map to the before-calibration margins reported in the EMIF Debug Toolkit.
Note: The Write Deskew, Read Deskew, DM Deskew, and Read after Write results are reported in delay steps (nominally 25ps, in Arria V and Cyclone V devices), not in picoseconds.
- DQS Enable calibration is reported as a VFIFO setting (in one clock period steps), a phase tap (in one-eighth clock period steps), and a delay chain step (in 25ps steps).
SEQ.C: DQS Enable ; Group 0 ; Rank 0 ; Start VFIFO 5 ; Phase 6 ; Delay 4 SEQ.C: DQS Enable ; Group 0 ; Rank 0 ; End VFIFO 6 ; Phase 5 ; Delay 9 SEQ.C: DQS Enable ; Group 0 ; Rank 0 ; Center VFIFO 6 ; Phase 2 ; Delay 1
Analysis of DQS Enable results: A VFIFO tap is 1 clock period, a phase is 1/8 clock period (45 degrees) and delay is nominally 25ps per tap. The DQSen window is the difference between the start and end—for the above example, assuming a frequency of 400 MHz (2500ps), that calculates as follows: start is 5*2500 + 6*2500/8 +4*25 = 14475ps. By the same calculation, the end is 16788ps. Consequently, the DQSen window is 2313ps. - The size of a read window or write window is equal to (left edge + right edge) * delay chain step size. Both the left edge and the right edge can be negative or positive.:
SEQ.C: Read Deskew ; DQ 0 ; Rank 0 ; Left edge 18 ; Right edge 27 ; DQ delay 0 ; DQS delay 8 SEQ.C: Write Deskew ; DQ 0 ; Rank 0 ; Left edge 30 ; Right edge 17 ; DQ delay 6 ; DQS delay 4
Analysis of DQ and DQS delay results: The DQ and DQS output delay (write) is the D5 delay chain. The DQ input delay (read) is the D1 delay chain, the DQS input delay (read) is the D4 delay chain. - Consider the following example of latency results:
SEQ.C: LFIFO Calibration ; Latency 10
Analysis of latency results: This is the calibrated PHY read latency. The EMIF Debug Toolkit does not report this figure. This latency is reported in clock cycles. - Consider the following example of FOM results:
SEQ.C: FOM IN = 83 SEQ.C: FOM OUT = 91
Analysis of FOM results: The FOM IN value is a measure of the health of the read interface; it is calculated as the sum over all groups of the minimum margin on DQ plus the margin on DQS, divided by 2. The FOM OUT is a measure of the health of the write interface; it is calculated as the sum over all groups of the minimum margin on DQ plus the margin on DQS, divided by 2. You may refer to these values as indicators of improvement when you are experimenting with various termination schemes, assuming there are no individual misbehaving DQ pins. - The debug report does not provide delay chain step size values. The delay chain step size varies with device speed grade. Refer to your device data sheet for exact incremental delay values for delay chains.
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