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1. Release Information
2. External Memory Interfaces Cyclone® 10 GX FPGA IP Introduction
3. Cyclone® 10 GX EMIF IP Product Architecture
4. Cyclone® 10 GX EMIF IP End-User Signals
5. Cyclone® 10 GX EMIF – Simulating Memory IP
6. Cyclone® 10 GX EMIF IP for DDR3
7. Cyclone® 10 GX EMIF IP for LPDDR3
8. Cyclone® 10 GX EMIF IP Timing Closure
9. Optimizing Controller Performance
10. Cyclone® 10 GX EMIF IP Debugging
11. External Memory Interfaces Cyclone® 10 GX FPGA IP User Guide Archives
12. Document Revision History for Cyclone® 10 GX External Memory Interfaces FPGA IP User Guide
4.1.1.1. pll_ref_clk for DDR3
4.1.1.2. pll_locked for DDR3
4.1.1.3. pll_extra_clk_0 for DDR3
4.1.1.4. pll_extra_clk_1 for DDR3
4.1.1.5. pll_extra_clk_2 for DDR3
4.1.1.6. pll_extra_clk_3 for DDR3
4.1.1.7. oct for DDR3
4.1.1.8. mem for DDR3
4.1.1.9. status for DDR3
4.1.1.10. afi_reset_n for DDR3
4.1.1.11. afi_clk for DDR3
4.1.1.12. afi_half_clk for DDR3
4.1.1.13. afi for DDR3
4.1.1.14. emif_usr_reset_n for DDR3
4.1.1.15. emif_usr_clk for DDR3
4.1.1.16. emif_usr_reset_n_sec for DDR3
4.1.1.17. emif_usr_clk_sec for DDR3
4.1.1.18. cal_debug_reset_n for DDR3
4.1.1.19. cal_debug_clk for DDR3
4.1.1.20. cal_debug_out_reset_n for DDR3
4.1.1.21. cal_debug_out_clk for DDR3
4.1.1.22. clks_sharing_master_out for DDR3
4.1.1.23. clks_sharing_slave_in for DDR3
4.1.1.24. clks_sharing_slave_out for DDR3
4.1.1.25. ctrl_amm for DDR3
4.1.1.26. ctrl_auto_precharge for DDR3
4.1.1.27. ctrl_user_priority for DDR3
4.1.1.28. ctrl_ecc_user_interrupt for DDR3
4.1.1.29. ctrl_ecc_readdataerror for DDR3
4.1.1.30. ctrl_mmr_slave for DDR3
4.1.1.31. cal_debug for DDR3
4.1.1.32. cal_debug_out for DDR3
4.1.2.1. pll_ref_clk for LPDDR3
4.1.2.2. pll_locked for LPDDR3
4.1.2.3. pll_extra_clk_0 for LPDDR3
4.1.2.4. pll_extra_clk_1 for LPDDR3
4.1.2.5. pll_extra_clk_2 for LPDDR3
4.1.2.6. pll_extra_clk_3 for LPDDR3
4.1.2.7. oct for LPDDR3
4.1.2.8. mem for LPDDR3
4.1.2.9. status for LPDDR3
4.1.2.10. afi_reset_n for LPDDR3
4.1.2.11. afi_clk for LPDDR3
4.1.2.12. afi_half_clk for LPDDR3
4.1.2.13. afi for LPDDR3
4.1.2.14. emif_usr_reset_n for LPDDR3
4.1.2.15. emif_usr_clk for LPDDR3
4.1.2.16. cal_debug_reset_n for LPDDR3
4.1.2.17. cal_debug_clk for LPDDR3
4.1.2.18. cal_debug_out_reset_n for LPDDR3
4.1.2.19. cal_debug_out_clk for LPDDR3
4.1.2.20. clks_sharing_master_out for LPDDR3
4.1.2.21. clks_sharing_slave_in for LPDDR3
4.1.2.22. clks_sharing_slave_out for LPDDR3
4.1.2.23. ctrl_user_priority for LPDDR3
4.1.2.24. ctrl_mmr_slave for LPDDR3
4.1.2.25. cal_debug for LPDDR3
4.1.2.26. cal_debug_out for LPDDR3
4.4.1. ctrlcfg0
4.4.2. ctrlcfg1
4.4.3. dramtiming0
4.4.4. sbcfg1
4.4.5. caltiming0
4.4.6. caltiming1
4.4.7. caltiming2
4.4.8. caltiming3
4.4.9. caltiming4
4.4.10. caltiming9
4.4.11. dramaddrw
4.4.12. sideband0
4.4.13. sideband1
4.4.14. sideband2
4.4.15. sideband3
4.4.16. sideband4
4.4.17. sideband5
4.4.18. sideband6
4.4.19. sideband7
4.4.20. sideband8
4.4.21. sideband9
4.4.22. sideband10
4.4.23. sideband11
4.4.24. sideband12
4.4.25. sideband13
4.4.26. dramsts
4.4.27. niosreserve0
4.4.28. niosreserve1
4.4.29. ecc3: ECC Error and Interrupt Configuration
4.4.30. ecc4: Status and Error Information
4.4.31. ecc5: Address of Most Recent SBE/DBE
4.4.32. ecc6: Address of Most Recent Correction Command Dropped
6.1.1. Intel Cyclone 10 GX EMIF IP DDR3 Parameters: General
6.1.2. Intel Cyclone 10 GX EMIF IP DDR3 Parameters: Memory
6.1.3. Intel Cyclone 10 GX EMIF IP DDR3 Parameters: Mem I/O
6.1.4. Intel Cyclone 10 GX EMIF IP DDR3 Parameters: FPGA I/O
6.1.5. Intel Cyclone 10 GX EMIF IP DDR3 Parameters: Mem Timing
6.1.6. Intel Cyclone 10 GX EMIF IP DDR3 Parameters: Board
6.1.7. Intel Cyclone 10 GX EMIF IP DDR3 Parameters: Controller
6.1.8. Intel Cyclone 10 GX EMIF IP DDR3 Parameters: Diagnostics
6.1.9. Intel Cyclone 10 GX EMIF IP DDR3 Parameters: Example Designs
7.1.1. Intel Cyclone 10 GX EMIF IP LPDDR3 Parameters: General
7.1.2. Intel Cyclone 10 GX EMIF IP LPDDR3 Parameters: Memory
7.1.3. Intel Cyclone 10 GX EMIF IP LPDDR3 Parameters: Mem I/O
7.1.4. Intel Cyclone 10 GX EMIF IP LPDDR3 Parameters: FPGA I/O
7.1.5. Intel Cyclone 10 GX EMIF IP LPDDR3 Parameters: Mem Timing
7.1.6. Intel Cyclone 10 GX EMIF IP LPDDR3 Parameters: Board
7.1.7. Intel Cyclone 10 GX EMIF IP LPDDR3 Parameters: Controller
7.1.8. Intel Cyclone 10 GX EMIF IP LPDDR3 Parameters: Diagnostics
7.1.9. Intel Cyclone 10 GX EMIF IP LPDDR3 Parameters: Example Designs
9.4.1. Auto-Precharge Commands
9.4.2. Latency
9.4.3. Calibration
9.4.4. Bank Interleaving
9.4.5. Additive Latency and Bank Interleaving
9.4.6. User-Controlled Refresh
9.4.7. Frequency of Operation
9.4.8. Series of Reads or Writes
9.4.9. Data Reordering
9.4.10. Starvation Control
9.4.11. Command Reordering
9.4.12. Bandwidth
9.4.13. Enable Command Priority Control
10.1. Interface Configuration Performance Issues
10.2. Functional Issue Evaluation
10.3. Timing Issue Characteristics
10.4. Verifying Memory IP Using the Signal Tap II Logic Analyzer
10.5. Hardware Debugging Guidelines
10.6. Categorizing Hardware Issues
10.7. Debugging Cyclone® 10 GX EMIF IP
10.8. Using the Traffic Generator with the Generated Design Example
10.5.1. Create a Simplified Design that Demonstrates the Same Issue
10.5.2. Measure Power Distribution Network
10.5.3. Measure Signal Integrity and Setup and Hold Margin
10.5.4. Vary Voltage
10.5.5. Operate at a Lower Speed
10.5.6. Determine Whether the Issue Exists in Previous Versions of Software
10.5.7. Determine Whether the Issue Exists in the Current Version of Software
10.5.8. Try A Different PCB
10.5.9. Try Other Configurations
10.5.10. Debugging Checklist
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6.1.2. Intel Cyclone 10 GX EMIF IP DDR3 Parameters: Memory
Display Name | Description |
---|---|
Memory format | Specifies the format of the external memory device. The following formats are supported: Component - a Discrete memory device; UDIMM - Unregistered/Unbuffered DIMM where address/control, clock, and data are unbuffered; RDIMM - Registered DIMM where address/control and clock are buffered; SODIMM - Small Outline DIMM is similar to UDIMM but smaller in size and is typically used for systems with limited space. Some memory protocols may not be available in all formats. (Identifier: MEM_DDR3_FORMAT_ENUM) |
DQ width | Specifies the total number of data pins in the interface. (Identifier: MEM_DDR3_DQ_WIDTH) |
DQ pins per DQS group | Specifies the total number of DQ pins per DQS group. (Identifier: MEM_DDR3_DQ_PER_DQS) |
Number of clocks | Specifies the number of CK/CK# clock pairs exposed by the memory interface. Usually more than 1 pair is required for RDIMM/LRDIMM formats. The value of this parameter depends on the memory device selected; refer to the data sheet for your memory device. (Identifier: MEM_DDR3_CK_WIDTH) |
Number of chip selects | Specifies the total number of chip selects in the interface, up to a maximum of 4. This parameter applies to discrete components only. (Identifier: MEM_DDR3_DISCRETE_CS_WIDTH) |
Number of DIMMs | Total number of DIMMs. (Identifier: MEM_DDR3_NUM_OF_DIMMS) |
Number of physical ranks per DIMM | Number of ranks per DIMM. For LRDIMM, this represents the number of physical ranks on the DIMM behind the memory buffer (Identifier: MEM_DDR3_RANKS_PER_DIMM) |
Row address width | Specifies the number of row address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of address pins needed for access to all available rows. (Identifier: MEM_DDR3_ROW_ADDR_WIDTH) |
Column address width | Specifies the number of column address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of address pins needed for access to all available columns. (Identifier: MEM_DDR3_COL_ADDR_WIDTH) |
Bank address width | Specifies the number of bank address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of bank address pins needed for access to all available banks. (Identifier: MEM_DDR3_BANK_ADDR_WIDTH) |
Enable DM pins | Indicates whether the interface uses data mask (DM) pins. This feature allows specified portions of the data bus to be written to memory (not available in x4 mode). One DM pin exists per DQS group. (Identifier: MEM_DDR3_DM_EN) |
Enable address mirroring for odd chip-selects | Enabling address mirroring for multi-CS discrete components. Typically used when components are arranged in a clamshell layout. (Identifier: MEM_DDR3_DISCRETE_MIRROR_ADDRESSING_EN) |
Enable address mirroring for odd ranks | Enabling address mirroring for dual-rank or quad-rank DIMM. (Identifier: MEM_DDR3_MIRROR_ADDRESSING_EN) |
ALERT# pin placement | Specifies placement for the mem_alert_n signal. You can select "I/O Lane with Address/Command Pins" or "I/O Lane with DQS Group". If you select "I/O Lane with DQS Group", you can specify the DQS group with which to place the mem_alert_n pin. For optimum signal integrity, you should choose "I/O Lane with Address/Command Pins". For interfaces containing multiple memory devices, it is recommended to connect the ALERT# pins together to the ALERT# pin on the FPGA. (Identifier: MEM_DDR3_ALERT_N_PLACEMENT_ENUM) |
DQS group of ALERT# | Select the DQS group with which the ALERT# pin is placed. (Identifier: MEM_DDR3_ALERT_N_DQS_GROUP) |
Display Name | Description |
---|---|
Memory CAS latency setting | Specifies the number of clock cycles between the read command and the availability of the first bit of output data at the memory device. Overall read latency equals the additive latency (AL) + the CAS latency (CL). Overall read latency depends on the memory device selected; refer to the datasheet for your device. (Identifier: MEM_DDR3_TCL) |
Memory write CAS latency setting | Specifies the number of clock cycles from the release of internal write to the latching of the first data in at the memory device. This value depends on the memory device selected; refer to the datasheet for your device. (Identifier: MEM_DDR3_WTCL) |
Memory additive CAS latency setting | Determines the posted CAS additive latency of the memory device. Enable this feature to improve command and bus efficiency, and increase system bandwidth. (Identifier: MEM_DDR3_ATCL_ENUM) |
Display Name | Description |
---|---|
Hide advanced mode register settings | Show or hide advanced mode register settings. Changing advanced mode register settings to non-default values is strongly discouraged. (Identifier: MEM_DDR3_HIDE_ADV_MR_SETTINGS) |
Burst Length | Specifies the DRAM burst length which determines how many consecutive addresses should be accessed for a given read/write command. (Identifier: MEM_DDR3_BL_ENUM) |
Read Burst Type | Indicates whether accesses within a given burst are in sequential or interleaved order. Select sequential if you are using the Intel-provided memory controller. (Identifier: MEM_DDR3_BT_ENUM) |
DLL precharge power down | Specifies whether the DLL in the memory device is off or on during precharge power-down (Identifier: MEM_DDR3_PD_ENUM) |
Enable the DLL in memory device | Enable the DLL in memory device (Identifier: MEM_DDR3_DLL_EN) |
Auto self-refresh method | Indicates whether to enable or disable auto self-refresh. Auto self-refresh allows the controller to issue self-refresh requests, rather than manually issuing self-refresh in order for memory to retain data. (Identifier: MEM_DDR3_ASR_ENUM) |
Self-refresh temperature | Specifies the self-refresh temperature as "Normal" or "Extended" mode. More information on Normal and Extended temperature modes can be found in the memory device datasheet. (Identifier: MEM_DDR3_SRT_ENUM) |
DDR3 RDIMM/LRDIMM control words | Each 4-bit/8-bit setting can be obtained from the manufacturer's data sheet and should be entered in hexadecimal, starting with the 8-bit setting RCBx on the left and continuing to RC1x followed by the 4-bit setting RCOF and ending with RC00 on the right (Identifier: MEM_DDR3_RDIMM_CONFIG) |
DDR3 LRDIMM additional control words | Each 4-bit setting can be obtained from the manufacturer's data sheet and should be entered in hexadecimal, starting with BC0F on the left and ending with BC00 on the right (Identifier: MEM_DDR3_LRDIMM_EXTENDED_CONFIG) |