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1. Release Information
2. External Memory Interfaces Stratix® 10 FPGA IP Introduction
3. Stratix® 10 EMIF IP Product Architecture
4. Stratix® 10 EMIF IP End-User Signals
5. Stratix® 10 EMIF – Simulating Memory IP
6. Stratix® 10 EMIF IP for DDR3
7. Stratix® 10 EMIF IP for DDR4
8. Stratix® 10 EMIF IP for QDR II/II+/II+ Xtreme
9. Stratix® 10 EMIF IP for QDR-IV
10. Stratix® 10 EMIF IP for RLDRAM 3
11. Stratix® 10 EMIF IP Timing Closure
12. Optimizing Controller Performance
13. Stratix® 10 EMIF IP Debugging
14. External Memory Interfaces Stratix® 10 FPGA IP User Guide Archives
15. Document Revision History for External Memory Interfaces Stratix® 10 FPGA IP User Guide
3.1. Stratix® 10 EMIF Architecture: Introduction
3.2. Stratix® 10 EMIF Sequencer
3.3. Stratix® 10 EMIF Calibration
3.4. Intel Stratix 10 EMIF IP Controller
3.5. Hardware Resource Sharing Among Multiple Stratix® 10 EMIFs
3.6. User-requested Reset in Stratix® 10 EMIF IP
3.7. Stratix® 10 EMIF for Hard Processor Subsystem
3.8. Stratix® 10 EMIF Ping Pong PHY
3.1.1. Stratix® 10 EMIF Architecture: I/O Subsystem
3.1.2. Stratix® 10 EMIF Architecture: I/O Column
3.1.3. Stratix® 10 EMIF Architecture: I/O SSM
3.1.4. Stratix® 10 EMIF Architecture: I/O Bank
3.1.5. Stratix® 10 EMIF Architecture: I/O Lane
3.1.6. Stratix® 10 EMIF Architecture: Input DQS Clock Tree
3.1.7. Stratix® 10 EMIF Architecture: PHY Clock Tree
3.1.8. Stratix® 10 EMIF Architecture: PLL Reference Clock Networks
3.1.9. Stratix® 10 EMIF Architecture: Clock Phase Alignment
4.1.1.1. local_reset_req for DDR3
4.1.1.2. local_reset_status for DDR3
4.1.1.3. pll_ref_clk for DDR3
4.1.1.4. pll_locked for DDR3
4.1.1.5. pll_extra_clk_0 for DDR3
4.1.1.6. pll_extra_clk_1 for DDR3
4.1.1.7. pll_extra_clk_2 for DDR3
4.1.1.8. pll_extra_clk_3 for DDR3
4.1.1.9. oct for DDR3
4.1.1.10. mem for DDR3
4.1.1.11. status for DDR3
4.1.1.12. afi_reset_n for DDR3
4.1.1.13. afi_clk for DDR3
4.1.1.14. afi_half_clk for DDR3
4.1.1.15. afi for DDR3
4.1.1.16. emif_usr_reset_n for DDR3
4.1.1.17. emif_usr_clk for DDR3
4.1.1.18. emif_usr_reset_n_sec for DDR3
4.1.1.19. emif_usr_clk_sec for DDR3
4.1.1.20. cal_debug_reset_n for DDR3
4.1.1.21. cal_debug_clk for DDR3
4.1.1.22. cal_debug_out_reset_n for DDR3
4.1.1.23. cal_debug_out_clk for DDR3
4.1.1.24. clks_sharing_master_out for DDR3
4.1.1.25. clks_sharing_slave_in for DDR3
4.1.1.26. clks_sharing_slave_out for DDR3
4.1.1.27. ctrl_amm for DDR3
4.1.1.28. ctrl_auto_precharge for DDR3
4.1.1.29. ctrl_user_priority for DDR3
4.1.1.30. ctrl_ecc_user_interrupt for DDR3
4.1.1.31. ctrl_ecc_readdataerror for DDR3
4.1.1.32. ctrl_ecc_status for DDR3
4.1.1.33. ctrl_mmr_slave for DDR3
4.1.1.34. hps_emif for DDR3
4.1.1.35. cal_debug for DDR3
4.1.1.36. cal_debug_out for DDR3
4.1.2.1. local_reset_req for DDR4
4.1.2.2. local_reset_status for DDR4
4.1.2.3. pll_ref_clk for DDR4
4.1.2.4. pll_locked for DDR4
4.1.2.5. pll_extra_clk_0 for DDR4
4.1.2.6. pll_extra_clk_1 for DDR4
4.1.2.7. pll_extra_clk_2 for DDR4
4.1.2.8. pll_extra_clk_3 for DDR4
4.1.2.9. ac_parity_err for DDR4
4.1.2.10. oct for DDR4
4.1.2.11. mem for DDR4
4.1.2.12. status for DDR4
4.1.2.13. afi_reset_n for DDR4
4.1.2.14. afi_clk for DDR4
4.1.2.15. afi_half_clk for DDR4
4.1.2.16. afi for DDR4
4.1.2.17. emif_usr_reset_n for DDR4
4.1.2.18. emif_usr_clk for DDR4
4.1.2.19. emif_usr_reset_n_sec for DDR4
4.1.2.20. emif_usr_clk_sec for DDR4
4.1.2.21. cal_debug_reset_n for DDR4
4.1.2.22. cal_debug_clk for DDR4
4.1.2.23. cal_debug_out_reset_n for DDR4
4.1.2.24. cal_debug_out_clk for DDR4
4.1.2.25. clks_sharing_master_out for DDR4
4.1.2.26. clks_sharing_slave_in for DDR4
4.1.2.27. clks_sharing_slave_out for DDR4
4.1.2.28. ctrl_amm for DDR4
4.1.2.29. ctrl_auto_precharge for DDR4
4.1.2.30. ctrl_user_priority for DDR4
4.1.2.31. ctrl_ecc_user_interrupt for DDR4
4.1.2.32. ctrl_ecc_readdataerror for DDR4
4.1.2.33. ctrl_ecc_status for DDR4
4.1.2.34. ctrl_mmr_slave for DDR4
4.1.2.35. hps_emif for DDR4
4.1.2.36. cal_debug for DDR4
4.1.2.37. cal_debug_out for DDR4
4.1.3.1. local_reset_req for QDR II/II+/II+ Xtreme
4.1.3.2. local_reset_status for QDR II/II+/II+ Xtreme
4.1.3.3. pll_ref_clk for QDR II/II+/II+ Xtreme
4.1.3.4. pll_locked for QDR II/II+/II+ Xtreme
4.1.3.5. pll_extra_clk_0 for QDR II/II+/II+ Xtreme
4.1.3.6. pll_extra_clk_1 for QDR II/II+/II+ Xtreme
4.1.3.7. pll_extra_clk_2 for QDR II/II+/II+ Xtreme
4.1.3.8. pll_extra_clk_3 for QDR II/II+/II+ Xtreme
4.1.3.9. oct for QDR II/II+/II+ Xtreme
4.1.3.10. mem for QDR II/II+/II+ Xtreme
4.1.3.11. status for QDR II/II+/II+ Xtreme
4.1.3.12. emif_usr_reset_n for QDR II/II+/II+ Xtreme
4.1.3.13. emif_usr_clk for QDR II/II+/II+ Xtreme
4.1.3.14. cal_debug_reset_n for QDR II/II+/II+ Xtreme
4.1.3.15. cal_debug_clk for QDR II/II+/II+ Xtreme
4.1.3.16. cal_debug_out_reset_n for QDR II/II+/II+ Xtreme
4.1.3.17. cal_debug_out_clk for QDR II/II+/II+ Xtreme
4.1.3.18. clks_sharing_master_out for QDR II/II+/II+ Xtreme
4.1.3.19. clks_sharing_slave_in for QDR II/II+/II+ Xtreme
4.1.3.20. clks_sharing_slave_out for QDR II/II+/II+ Xtreme
4.1.3.21. ctrl_amm for QDR II/II+/II+ Xtreme
4.1.3.22. cal_debug for QDR II/II+/II+ Xtreme
4.1.3.23. cal_debug_out for QDR II/II+/II+ Xtreme
4.1.4.1. local_reset_req for QDR-IV
4.1.4.2. local_reset_status for QDR-IV
4.1.4.3. pll_ref_clk for QDR-IV
4.1.4.4. pll_locked for QDR-IV
4.1.4.5. pll_extra_clk_0 for QDR-IV
4.1.4.6. pll_extra_clk_1 for QDR-IV
4.1.4.7. pll_extra_clk_2 for QDR-IV
4.1.4.8. pll_extra_clk_3 for QDR-IV
4.1.4.9. oct for QDR-IV
4.1.4.10. mem for QDR-IV
4.1.4.11. status for QDR-IV
4.1.4.12. afi_reset_n for QDR-IV
4.1.4.13. afi_clk for QDR-IV
4.1.4.14. afi_half_clk for QDR-IV
4.1.4.15. afi for QDR-IV
4.1.4.16. emif_usr_reset_n for QDR-IV
4.1.4.17. emif_usr_clk for QDR-IV
4.1.4.18. cal_debug_reset_n for QDR-IV
4.1.4.19. cal_debug_clk for QDR-IV
4.1.4.20. cal_debug_out_reset_n for QDR-IV
4.1.4.21. cal_debug_out_clk for QDR-IV
4.1.4.22. clks_sharing_master_out for QDR-IV
4.1.4.23. clks_sharing_slave_in for QDR-IV
4.1.4.24. clks_sharing_slave_out for QDR-IV
4.1.4.25. ctrl_amm for QDR-IV
4.1.4.26. cal_debug for QDR-IV
4.1.4.27. cal_debug_out for QDR-IV
4.1.5.1. local_reset_req for RLDRAM 3
4.1.5.2. local_reset_status for RLDRAM 3
4.1.5.3. pll_ref_clk for RLDRAM 3
4.1.5.4. pll_locked for RLDRAM 3
4.1.5.5. pll_extra_clk_0 for RLDRAM 3
4.1.5.6. pll_extra_clk_1 for RLDRAM 3
4.1.5.7. pll_extra_clk_2 for RLDRAM 3
4.1.5.8. pll_extra_clk_3 for RLDRAM 3
4.1.5.9. oct for RLDRAM 3
4.1.5.10. mem for RLDRAM 3
4.1.5.11. status for RLDRAM 3
4.1.5.12. afi_reset_n for RLDRAM 3
4.1.5.13. afi_clk for RLDRAM 3
4.1.5.14. afi_half_clk for RLDRAM 3
4.1.5.15. afi for RLDRAM 3
4.1.5.16. cal_debug_reset_n for RLDRAM 3
4.1.5.17. cal_debug_clk for RLDRAM 3
4.1.5.18. cal_debug_out_reset_n for RLDRAM 3
4.1.5.19. cal_debug_out_clk for RLDRAM 3
4.1.5.20. clks_sharing_master_out for RLDRAM 3
4.1.5.21. clks_sharing_slave_in for RLDRAM 3
4.1.5.22. clks_sharing_slave_out for RLDRAM 3
4.1.5.23. cal_debug for RLDRAM 3
4.1.5.24. cal_debug_out for RLDRAM 3
4.4.1. ctrlcfg0
4.4.2. ctrlcfg1
4.4.3. dramtiming0
4.4.4. caltiming0
4.4.5. caltiming1
4.4.6. caltiming2
4.4.7. caltiming3
4.4.8. caltiming4
4.4.9. caltiming9
4.4.10. dramaddrw
4.4.11. sideband0
4.4.12. sideband1
4.4.13. sideband4
4.4.14. sideband6
4.4.15. sideband7
4.4.16. sideband9
4.4.17. sideband11
4.4.18. sideband12
4.4.19. sideband13
4.4.20. sideband14
4.4.21. dramsts
4.4.22. niosreserve0
4.4.23. niosreserve1
4.4.24. sideband16
4.4.25. ecc3: ECC Error and Interrupt Configuration
4.4.26. ecc4: Status and Error Information
4.4.27. ecc5: Address of Most Recent SBE/DBE
4.4.28. ecc6: Address of Most Recent Correction Command Dropped
4.4.29. ecc7: Extension for Address of Most Recent SBE/DBE
4.4.30. ecc8: Extension for Address of Most Recent Correction Command Dropped
6.1.1. Intel Stratix 10 EMIF IP DDR3 Parameters: General
6.1.2. Intel Stratix 10 EMIF IP DDR3 Parameters: Memory
6.1.3. Intel Stratix 10 EMIF IP DDR3 Parameters: Mem I/O
6.1.4. Intel Stratix 10 EMIF IP DDR3 Parameters: FPGA I/O
6.1.5. Intel Stratix 10 EMIF IP DDR3 Parameters: Mem Timing
6.1.6. Intel Stratix 10 EMIF IP DDR3 Parameters: Board
6.1.7. Intel Stratix 10 EMIF IP DDR3 Parameters: Controller
6.1.8. Intel Stratix 10 EMIF IP DDR3 Parameters: Diagnostics
6.1.9. Intel Stratix 10 EMIF IP DDR3 Parameters: Example Designs
7.1.1. Intel Stratix 10 EMIF IP DDR4 Parameters: General
7.1.2. Intel Stratix 10 EMIF IP DDR4 Parameters: Memory
7.1.3. Intel Stratix 10 EMIF IP DDR4 Parameters: Mem I/O
7.1.4. Intel Stratix 10 EMIF IP DDR4 Parameters: FPGA I/O
7.1.5. Intel Stratix 10 EMIF IP DDR4 Parameters: Mem Timing
7.1.6. Intel Stratix 10 EMIF IP DDR4 Parameters: Board
7.1.7. Intel Stratix 10 EMIF IP DDR4 Parameters: Controller
7.1.8. Intel Stratix 10 EMIF IP DDR4 Parameters: Diagnostics
7.1.9. Intel Stratix 10 EMIF IP DDR4 Parameters: Example Designs
7.5.4.1. General Layout Guidelines
7.5.4.2. Layout Guidelines
7.5.4.3. Length Matching Rules
7.5.4.4. Spacing Guidelines
7.5.4.5. Layout Guidelines for DDR3 and DDR4 SDRAM Wide Interface (>72 bits)
7.5.4.6. Fly-By Network Design for Clock, Command, and Address Signals
7.5.4.7. Clamshell Topology
7.5.4.8. Additional Layout Guidelines for DDR4 Twin-die Devices
8.1.1. Intel Stratix 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: General
8.1.2. Intel Stratix 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: Memory
8.1.3. Intel Stratix 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: FPGA I/O
8.1.4. Intel Stratix 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: Mem Timing
8.1.5. Intel Stratix 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: Board
8.1.6. Intel Stratix 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: Controller
8.1.7. Intel Stratix 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: Diagnostics
8.1.8. Intel Stratix 10 EMIF IP QDR II/II+/II+ Xtreme Parameters: Example Designs
8.3.1.6.1. General Guidelines
8.3.1.6.2. QDR II, QDR II+ and QDR II+ Xtreme SRAM Command Signals
8.3.1.6.3. QDR II, QDR II+ and QDR II+ Xtreme SRAM Address Signals
8.3.1.6.4. QDR II, QDR II+, and QDR II+ Xtreme SRAM Clock Signals
8.3.1.6.5. QDR II, QDR II+ and QDR II+ Xtreme SRAM Data, BWS, and QVLD Signals
8.3.1.6.6. Resource Sharing Guidelines (Multiple Interfaces)
9.1.1. Intel Stratix 10 EMIF IP QDR-IV Parameters: General
9.1.2. Intel Stratix 10 EMIF IP QDR-IV Parameters: Memory
9.1.3. Intel Stratix 10 EMIF IP QDR-IV Parameters: FPGA I/O
9.1.4. Intel Stratix 10 EMIF IP QDR-IV Parameters: Mem Timing
9.1.5. Intel Stratix 10 EMIF IP QDR-IV Parameters: Board
9.1.6. Intel Stratix 10 EMIF IP QDR-IV Parameters: Controller
9.1.7. Intel Stratix 10 EMIF IP QDR-IV Parameters: Diagnostics
9.1.8. Intel Stratix 10 EMIF IP QDR-IV Parameters: Example Designs
10.1.1. Intel Stratix 10 EMIF IP RLDRAM 3 Parameters: General
10.1.2. Intel Stratix 10 EMIF IP RLDRAM 3 Parameters: Memory
10.1.3. Intel Stratix 10 EMIF IP RLDRAM 3 Parameters: FPGA I/O
10.1.4. Intel Stratix 10 EMIF IP RLDRAM 3 Parameters: Mem Timing
10.1.5. Intel Stratix 10 EMIF IP RLDRAM 3 Parameters: Board
10.1.6. Intel Stratix 10 EMIF IP RLDRAM 3 Parameters: Diagnostics
10.1.7. Intel Stratix 10 EMIF IP RLDRAM 3 Parameters: Example Designs
12.4.1. Auto-Precharge Commands
12.4.2. Latency
12.4.3. Calibration
12.4.4. Bank Interleaving
12.4.5. Additive Latency and Bank Interleaving
12.4.6. User-Controlled Refresh
12.4.7. Frequency of Operation
12.4.8. Series of Reads or Writes
12.4.9. Data Reordering
12.4.10. Starvation Control
12.4.11. Command Reordering
12.4.12. Bandwidth
12.4.13. Enable Command Priority Control
13.1. Interface Configuration Performance Issues
13.2. Functional Issue Evaluation
13.3. Timing Issue Characteristics
13.4. Verifying Memory IP Using the Signal Tap II Logic Analyzer
13.5. Hardware Debugging Guidelines
13.6. Categorizing Hardware Issues
13.7. Debugging Stratix® 10 EMIF IP
13.8. Using the Default Traffic Generator
13.9. Using the Configurable Traffic Generator (TG2)
13.5.1. Create a Simplified Design that Demonstrates the Same Issue
13.5.2. Measure Power Distribution Network
13.5.3. Measure Signal Integrity and Setup and Hold Margin
13.5.4. Vary Voltage
13.5.5. Operate at a Lower Speed
13.5.6. Determine Whether the Issue Exists in Previous Versions of Software
13.5.7. Determine Whether the Issue Exists in the Current Version of Software
13.5.8. Try A Different PCB
13.5.9. Try Other Configurations
13.5.10. Debugging Checklist
13.7.1.1. User Interface
13.7.1.2. Communication
13.7.1.3. Setup and Use
13.7.1.4. Configuring Your EMIF IP for Use with the Legacy Debug Toolkit
13.7.1.5. Reports
13.7.1.6. On-Die Termination Calibration
13.7.1.7. Eye Diagram
13.7.1.8. Driver Margining for Stratix® 10 EMIF IP
13.7.1.9. Example Tcl Script for Running the Legacy EMIF Debug Toolkit
13.7.1.10. Using the Legacy EMIF Debug Toolkit with Stratix® 10 HPS Interfaces
13.7.2.1. Prerequisites for Using the EMIF Unified Calibration Debug Toolkit
13.7.2.2. Configuring a Design to use the EMIF Unified Calibration Debug Toolkit
13.7.2.3. Launching the EMIF Debug Toolkit
13.7.2.4. Using the EMIF Debug Toolkit
13.7.2.5. Exporting Tables
13.7.2.6. Viewing Diagrams in the Eye Viewer
13.7.2.7. Guidelines for Debugging Calibration Issues
13.7.2.7.1. Debugging Calibration Failure Using Information from the Calibration report
13.7.2.7.2. Debugging Address and Command Leveling Calibration Failure
13.7.2.7.3. Debugging Address and Command Deskew Failure
13.7.2.7.4. Debugging DQS Enable Failure
13.7.2.7.5. Debugging Read Deskew Calibration Failure
13.7.2.7.6. Debugging VREFIN Calibration Failure
13.7.2.7.7. Debugging LFIFO Calibration Failure
13.7.2.7.8. Debugging Write Leveling Failure
13.7.2.7.9. Debugging Write Deskew Calibration Failure
13.7.2.7.10. Debugging VREFOUT Calibration Failure
13.9.1. Enabling the Traffic Generator in a Design Example
13.9.2. Traffic Generator Block Description
13.9.3. Default Traffic Pattern
13.9.4. Configuration and Status Registers
13.9.5. User Pattern
13.9.6. Traffic Generator Status
13.9.7. Starting Traffic with the Traffic Generator
13.9.8. Traffic Generator Configuration User Interface
13.9.9. Examples of Configuring the TG2 Traffic Generator
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7.1.2. Intel Stratix 10 EMIF IP DDR4 Parameters: Memory
Display Name | Description |
---|---|
Memory format | Specifies the format of the external memory device. The following formats are supported: Component - a Discrete memory device; UDIMM - Unregistered/Unbuffered DIMM where address/control, clock, and data are unbuffered; RDIMM - Registered DIMM where address/control and clock are buffered; LRDIMM - Load Reduction DIMM where address/control, clock, and data are buffered. LRDIMM reduces the load to increase memory speed and supports higher densities than RDIMM; SODIMM - Small Outline DIMM is similar to UDIMM but smaller in size and is typically used for systems with limited space. Some memory protocols may not be available in all formats. (Identifier: MEM_DDR4_FORMAT_ENUM) |
DQ width | Specifies the total number of data pins in the interface. (Identifier: MEM_DDR4_DQ_WIDTH) |
DQ pins per DQS group | Specifies the total number of DQ pins per DQS group. (Identifier: MEM_DDR4_DQ_PER_DQS) |
Number of clocks | Specifies the number of CK/CK# clock pairs exposed by the memory interface. Usually more than 1 pair is required for RDIMM/LRDIMM formats. The value of this parameter depends on the memory device selected; refer to the data sheet for your memory device. (Identifier: MEM_DDR4_CK_WIDTH) |
Number of chip selects | Specifies the total number of chip selects in the interface, up to a maximum of 4. This parameter applies to discrete components only. (Identifier: MEM_DDR4_DISCRETE_CS_WIDTH) |
Number of DIMMs | Total number of DIMMs. (Identifier: MEM_DDR4_NUM_OF_DIMMS) |
Chip ID width | Specifies the number of chip ID pins. Only applicable to registered and load-reduced DIMMs that use 3DS/TSV memory devices. (Identifier: MEM_DDR4_CHIP_ID_WIDTH) |
Number of physical ranks per DIMM | Number of ranks per DIMM. For LRDIMM, this represents the number of physical ranks on the DIMM behind the memory buffer (Identifier: MEM_DDR4_RANKS_PER_DIMM) |
Row address width | Specifies the number of row address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of address pins needed for access to all available rows. (Identifier: MEM_DDR4_ROW_ADDR_WIDTH) |
Column address width | Specifies the number of column address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of address pins needed for access to all available columns. (Identifier: MEM_DDR4_COL_ADDR_WIDTH) |
Bank address width | Specifies the number of bank address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of bank address pins needed for access to all available banks. (Identifier: MEM_DDR4_BANK_ADDR_WIDTH) |
Bank group width | Specifies the number of bank group pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of bank group pins needed for access to all available bank groups. (Identifier: MEM_DDR4_BANK_GROUP_WIDTH) |
Data mask | Indicates whether the interface uses data mask (DM) pins. This feature allows specified portions of the data bus to be written to memory (not available in x4 mode). One DM pin exists per DQS group. (Identifier: MEM_DDR4_DM_EN) |
Write DBI | Indicates whether the interface uses write data bus inversion (DBI). This feature provides better signal integrity and write margin. This feature is unavailable if Data Mask is enabled or in x4 mode. (Identifier: MEM_DDR4_WRITE_DBI) |
Read DBI | Specifies whether the interface uses read data bus inversion (DBI). Enable this feature for better signal integrity and read margin. This feature is not available in x4 configurations. (Identifier: MEM_DDR4_READ_DBI) |
Enable address mirroring for odd chip-selects | Enabling address mirroring for multi-CS discrete components. Typically used when components are arranged in a clamshell layout. (Identifier: MEM_DDR4_DISCRETE_MIRROR_ADDRESSING_EN) |
Enable address mirroring for odd ranks | Enabling address mirroring for dual-rank or quad-rank DIMM. (Identifier: MEM_DDR4_MIRROR_ADDRESSING_EN) |
Enable ALERT#/PAR pins | Allows address/command calibration, which may provide better margins on the address/command bus. The alert_n signal is not accessible in the AFI or Avalon domains. This means there is no way to know whether a parity error has occurred during user mode. The parity pin is a dedicated pin in the address/command bank, but the alert_n pin can be placed in any bank that spans the memory interface. You should explicitly choose the location of the alert_n pin and place it in the address/command bank. Address/command parity is checked only during calibration, not in user mode. Because the alert_n pin is not accessible via the AFI or Avalon interfaces, changing the address/command parity latency option from the default value in advanced mode register settings, is not recommended. (Identifier: MEM_DDR4_ALERT_PAR_EN) |
ALERT# pin placement | Specifies placement for the mem_alert_n signal. If you select "I/O Lane with Address/Command Pins", you can pick the I/O lane and pin index in the add/cmd bank with the subsequent drop down menus. If you select "I/O Lane with DQS Group", you can specify the DQS group with which to place the mem_alert_n pin. If you select "Automatically select a location", the IP automatically selects a pin for the mem_alert_n signal. If you select this option, no additional location constraints can be applied to the mem_alert_n pin, or a fitter error will result during compilation. For optimum signal integrity, you should choose "I/O Lane with Address/Command Pins". For interfaces containing multiple memory devices, it is recommended to connect the ALERT# pins together to the ALERT# pin on the FPGA. (Identifier: MEM_DDR4_ALERT_N_PLACEMENT_ENUM) |
DQS group of ALERT# | Select the DQS group with which the ALERT# pin is placed. (Identifier: MEM_DDR4_ALERT_N_DQS_GROUP) |
Address/command I/O lane of ALERT# | Select the lane of the Address/Command I/O Tile where ALERT# pin is placed. (Identifier: MEM_DDR4_ALERT_N_AC_LANE) |
Pin index of ALERT# | Select the pin of the Address/Command I/O Lane where ALERT# pin is placed. (Identifier: MEM_DDR4_ALERT_N_AC_PIN) |
Display Name | Description |
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Memory CAS latency setting | Specifies the number of clock cycles between the read command and the availability of the first bit of output data at the memory device. Overall read latency equals the additive latency (AL) + the CAS latency (CL). Overall read latency depends on the memory device selected; refer to the datasheet for your device. (Identifier: MEM_DDR4_TCL) |
Memory write CAS latency setting | Specifies the number of clock cycles from the release of internal write to the latching of the first data in at the memory device. This value depends on the memory device selected; refer to the datasheet for your device. (Identifier: MEM_DDR4_WTCL) |
Memory additive CAS latency setting | Determines the posted CAS additive latency of the memory device. Enable this feature to improve command and bus efficiency, and increase system bandwidth. (Identifier: MEM_DDR4_ATCL_ENUM) |
Display Name | Description |
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Hide advanced mode register settings | Show or hide advanced mode register settings. Changing advanced mode register settings to non-default values is strongly discouraged. (Identifier: MEM_DDR4_HIDE_ADV_MR_SETTINGS) |
Addr/CMD parity latency | Additional latency incurred by enabling address/command parity check after calibration. Select a value to enable address/command parity with the latency associated with the selected value. Select Disable to disable address/command parity. Address/command is enabled automatically and as-needed during calibration regardless of the value of this setting. (Identifier: MEM_DDR4_AC_PARITY_LATENCY) |
Burst Length | Specifies the DRAM burst length which determines how many consecutive addresses should be accessed for a given read/write command. (Identifier: MEM_DDR4_BL_ENUM) |
Read Burst Type | Indicates whether accesses within a given burst are in sequential or interleaved order. Select sequential if you are using the Intel-provided memory controller. (Identifier: MEM_DDR4_BT_ENUM) |
Enable the DLL in memory device | Enable the DLL in memory device (Identifier: MEM_DDR4_DLL_EN) |
Auto self-refresh method | Indicates whether to enable or disable auto self-refresh. Auto self-refresh allows the controller to issue self-refresh requests, rather than manually issuing self-refresh in order for memory to retain data. (Identifier: MEM_DDR4_ASR_ENUM) |
Write CRC enable | Write CRC enable (Identifier: MEM_DDR4_WRITE_CRC) |
DDR4 geardown mode | Set DDR4 geardown mode for control signals at high frequency (Identifier: MEM_DDR4_GEARDOWN) |
Per-DRAM addressability | Per-DRAM addressability enable (Identifier: MEM_DDR4_PER_DRAM_ADDR) |
Temperature sensor readout | Temperature sensor readout enable (Identifier: MEM_DDR4_TEMP_SENSOR_READOUT) |
Fine granularity refresh | Increased frequency of refresh in exchange for shorter refresh. Shorter tRFC and increased cycle time can produce higher bandwidth. (Identifier: MEM_DDR4_FINE_GRANULARITY_REFRESH) |
MPR read format | Multipurpose register readout format (Identifier: MEM_DDR4_MPR_READ_FORMAT) |
Maximum power down mode | Maximum power down mode (Identifier: MEM_DDR4_MAX_POWERDOWN) |
Temperature controlled refresh range | Indicates temperature controlled refresh range where normal temperature mode covers 0C to 85C and extended mode covers 0C to 95C. (Identifier: MEM_DDR4_TEMP_CONTROLLED_RFSH_RANGE) |
Temperature controlled refresh enable | Indicates whether to enable temperature controlled refresh, which allows the device to adjust the internal refresh period to be longer than tREFI of the normal temperature range by skipping external refresh commands. (Identifier: MEM_DDR4_TEMP_CONTROLLED_RFSH_ENA) |
Internal VrefDQ monitor | Indicates whether to enable the internal VrefDQ monitor. (Identifier: MEM_DDR4_INTERNAL_VREFDQ_MONITOR) |
CS to Addr/CMD Latency | CS to Addr/CMD Latency (CAL mode) for idle state DRAM receiver power reduction (Identifier: MEM_DDR4_CAL_MODE) |
Self refresh abort | Self refresh abort for latency reduction. (Identifier: MEM_DDR4_SELF_RFSH_ABORT) |
Read preamble training mode enable | Read preamble training mode enable. (Identifier: MEM_DDR4_READ_PREAMBLE_TRAINING) |
Read preamble | Number of read preamble cycles. This mode register setting determines the number of cycles DQS (read) will go low before starting to toggle. It is strongly recommended to use the default read preamble setting. (Identifier: MEM_DDR4_READ_PREAMBLE) |
Write preamble | Write preamble cycles. It is strongly recommended to use the default write preamble setting. (Identifier: MEM_DDR4_WRITE_PREAMBLE) |
ODT input buffer during powerdown mode | Indicates whether to enable on-die termination (ODT) input buffer during powerdown mode. (Identifier: MEM_DDR4_ODT_IN_POWERDOWN) |
Addr/CMD persistent error | If set, Addr/CMD parity errors continue to be checked after a previous Addr/CMD parity error (Identifier: MEM_DDR4_AC_PERSISTENT_ERROR) |