Build with Leading-Edge Manufacturing Process Technologies
Capitalize on Intel’s legacy of delivering consistent innovation that continues today with Intel Foundry.
Beyond Five Nodes in Four Years (5N4Y)
With execution to our ambitious five nodes in four years (5N4Y) goal on track, Intel revealed at Intel Foundry Direct Connect '24 an extended process technology roadmap adding:
- Intel 14A to the company’s leading-edge node plan,
- Several specialized node evolutions for Intel 3, Intel 18A, and Intel 14A, including Intel 3-PT with through-silicon vias for 3D advanced packaging designs, and
- Mature process nodes, including new 12-nanometer nodes expected through joint development with UMC.
Customers ready to design can start their engagement with Intel Foundry today.
Intel 18A: Biggest Innovation Since FinFET
Introduces RibbonFET and PowerVia:
- Our biggest innovation since Intel introduced FinFETs to HVM in 2011.
- RibbonFET, Intel Foundry’s implementation of a Gate-all-around (GAA) transistor, improves density and performance versus FinFET.
- Optimized ribbon stack delivers superior performance per watt and minimum supply voltage (Vmin).
- PowerVia is Intel’s unique industry-first implementation of backside power delivery architecture that improves standard cell utilization by 5-10% and ISO-power performance by up to 4%.1
- Well-suited for High Performance Computing (HPC) and mobile applications.
Intel 3: Intel’s Ultimate FinFET Node
High-performance per watt with extensive Extreme Ultraviolet (EUV) use:
- Evolution of Intel 4 with 1.08x chip density and 18% performance per watt improvement.2
- Adds denser library, improved drive current and interconnect while benefiting from Intel 4 learnings for faster yield ramp.
- Well-suited for general compute applications.
12nm: Expanding Customer Choice in Collaboration With UMC
Expanding our portfolio through an innovative partnership:
- UMC and Intel Foundry are collaborating on the development of a 12nm technology platform, bringing together Intel's FinFET expertise with UMC's logic and mixed-mode/RF experience.
- Competitive to industry 12nm.3
- Offers customer greater choice in their sourcing decisions with access to a more geographically diversified and resilient supply chain.
- Well-suited for high-growth markets such as mobile, wireless connectivity, and networking applications.
Intel 16: The Ideal Gateway to FinFET
Advantages of FinFET with flexibility of planar:
- Performance of a 16nm class node with fewer masks and simpler back-end design rules.
Now Previewing: Intel 14A
2nd Gen PowerVia Combined with RibbonFET
- Industry First High Numerical Aperture (High NA) EUV.
- High NA is foundational to cost-effective scaling.
See Our Other World-Class Foundry Offerings
To help you build the next generation of silicon, our unique offerings are enabled by advanced process technologies complemented by our robust design partner ecosystem.
Global Manufacturing
Benefit from a robust, geo-diverse, and expanding supply for wafers and assembly & test.
Design Ecosystem
Reimagine your designs with a unique combination of Intel Foundry technology, IP, EDA, and services through the Intel Foundry Accelerator ecosystem alliance program.
Intel Foundry Portal
Notices and Disclaimers4
Product and Performance Information
An Intel 3 Advanced FinFET Platform Technology for High Performance Computing and SOC Product Applications, featured as part of the 2024 VLSI Symposium.
According to Node Design Specifications.
This webpage contains forward-looking statements about Intel’s future plans or expectations, including with respect to future technology and products and the expected benefits and availability of such technology and products. These statements are based on current expectations and involve many risks and uncertainties that could cause actual results to differ materially from those expressed or implied in such statements. For more information on the factors that could cause actual results to differ materially, see our most recent earnings release and SEC filings at www.intc.com.